期刊的影响因子--文章列表

期刊文章列表
张莉萌，陆丹，李召松，潘碧玮，赵玲娟（Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices，Institute of Semiconductors，Chinese Academy of Sciences）.C-band fundamental/first-order mode converter based on multimode interference coupler on InP substrate^-[J].Journal of Semiconductors,2016,第12期何宝平，王祖军，盛江坤，黄绍艳（The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect，Northwest Institute of Nuclear Technology）.Total ionizing dose radiation effects on NMOS parasitic transistors in advanced bulk CMOS technology devices^-[J].Journal of Semiconductors,2016,第12期孙茂松^1，2，张纪才^2，3，黄俊²，李雪威²，王林军¹，刘雪华²，王建峰^2，3，徐科^2，3（School of Materials Science and Engineering，Shanghai University；Platform for Characterization and Test，Suzhou Institute of Nano-Tech and Nano-Bionics，CAS；Suzhou Nanowin Science and Technology Co，Ltd）.Influence of thickness on strain state and surface morphology of AlN grown by HVPE[J].Journal of Semiconductors,2016,第12期刘阳，柴常春，史春蕾，樊庆扬，刘彧千（School of Microelectronics，Xidian University，Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices）.Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor^-[J].Journal of Semiconductors,2016,第12期姚齐峰^1，2，黄永箴¹，杨跃德¹，肖金龙¹（State Key Laboratory on Integrated Optoelectronics，Institute of Semiconductors，Chinese Academy of Sciences；Beijing Engineering Research Center of Optoelectronic Information and Instrument，Beijing Information Science and Technology University）.Analysis of mode characteristics for microcircular resonators confined by different metallic materials^-[J].Journal of Semiconductors,2016,第12期李学潮，施剑皓，万润东（Department of Materials Physics and Chemistry,Kunming University of Science and Technology）.The slabs for the rutile TiO₂（110）surface^-[J].Journal of Semiconductors,2016,第12期敖志光，孙金海，蔡禾，宋国峰，宋甲坤，宋玉志，徐云（Institute of Semiconductors，Chinese Academy of Sciences；Science and Technology on Electromagnetic Scattering Laboratory）.Nanoplasmonic-gold-cylinder-array-enhanced terahertz source^-[J].Journal of Semiconductors,2016,第12期汪鹏君，周可基，张会红，龚道辉（Institute of Circuits and Systems，Ningbo University）.Design of replica bit line control circuit to optimize power for SRAM^-[J].Journal of Semiconductors,2016,第12期 O.Ya Olikh¹，K.V.Voitenko¹，R.M.Burbelo¹，Ja M.Olikh²（Faculty of Physics，Taras Shevchenko National University of Kyiv；V Lashkaryov Institute of Semiconductor Physics，National Academy of Sciences of Ukraine）.Effect of ultrasound on reverse leakage current of silicon Schottky barrier structure[J].Journal of Semiconductors,2016,第12期蒋中建，叶佐昌，王燕（Tsinghua National Laboratory for Information Science and Technology，Institute of Microelectronics，Tsinghua University）.Efficient SRAM yield optimization with mixture surrogate modeling[J].Journal of Semiconductors,2016,第12期 Ren Bo，Hou Yan，Liang Yanan（Institute of Semiconductors； Chinese Academy of Sciences）.Research progress of III–V laser bonding to Si[J].Journal of Semiconductors,2016,第12期 S.Guitouni，M.Khammar，M.Messaoudi，N.Attaf，M.S.Aida（Thin Films Laboratory，Faculty of Sciences，Freres Mentouri Constantine 1 University Algeria）.Electrical properties of Cu₄ZnSnS₂/ZnS heterojunction prepared by ultrasonic spray pyrolysis[J].Journal of Semiconductors,2016,第12期任博，侯艳，梁亚楠（Institute of Semiconductors，Chinese Academy of Sciences）.Research progress of Ⅲ-Ⅴ laser bonding to Si[J].半导体学报(英文版),2016,第12期江灵荣^1，2，刘建平^1，2，田爱琴^1，2，程洋^1，2，李增成^1，2，张立群^1，2，张书明^1，2，李德尧^1，2，M.Ikeda^1，2，杨辉^1，2（Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences；Key Laboratory of Nano-Devices and Applications,Chinese Academy of Sciences）.GaN-based green laser diodes[J].Journal of Semiconductors,2016,第11期牛吉强，张杨，关敏，王成艳，崔利杰，杨秋旻，李弋洋，曾一平（Institute of Semiconductors,Chinese Academy of Sciences）.Detection of lead ions with AlGaAs/InGaAs pseudomorphic high electron mobility transistor[J].Journal of Semiconductors,2016,第11期刘敏，张玉明，吕红亮，张义门（School of Microelectronics,Xidian University,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China）.Simulated study on the InP/InGaAs DHBT under proton irradiation[J].Journal of Semiconductors,2016,第11期尹冬冬，何婷婷，韩勤，吕倩倩，张冶金，杨晓红（State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences）.High-responsivity 40 Gbit/s InGaAs/InP PIN photodetectors integrated on siliconon-insulator waveguide circuits[J].Journal of Semiconductors,2016,第11期黄宇亮，张连，程哲，张韵，艾玉杰，赵勇兵，路红喜，王军喜，李晋闽（Institute of Semiconductors,Chinese Academy of Sciences）.AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates[J].Journal of Semiconductors,2016,第11期 ZhaoYunchou，JiaHao，DingJianfeng，ZhangLei，FuXin，YangLin（State Key Laboratory on Integrated Optoelectronics， Institute of Semiconductors， Chinese Academy of Sciences，Beijing 100083， China）.Five-portsilicon opticalrouter based on Mach-Zehnder opticalswitchesfor photonic networks-on-chip[J].Journal of Semiconductors,2016,第11期尤志强，胡飞，黄黎明，刘鹏，邝继顺，李实英（Key Laboratory for Embedded and Network Computing of Hunan Province,College of Computer Science and Electronic Engineering,Hunan University）.A long lifetime，low error rate RRAM design with self-repair module[J].Journal of Semiconductors,2016,第11期周小锋，刘露，朱樟明，周端（School of Microelectronics,Xidian University）.A low overhead load balancing router for network-on-chip[J].Journal of Semiconductors,2016,第11期陈华俊，陈昌兆，李洋，方贤文（School of Science,Anhui University of Science and Technology）.Monolayer-molybdenum-disulfide-based nano-optomechanical transistor and tunable nonlinear responses[J].Journal of Semiconductors,2016,第11期郝永德，周乐归，李君，胡作启（School of Optical and Electronic Information,Huazhong University of Science and Technology）.Structural，morphological and magnetic properties of Zn_1-xCo_xO prepared by sol-gel and hydrothermal method combined[J].Journal of Semiconductors,2016,第11期边丹丹，雷勋，陈少武（State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences）.Dispersion characteristics of nanometer-scaled silicon nitride suspended membrane waveguides[J].Journal of Semiconductors,2016,第11期王升^1，2，康云¹，李贤丽¹（College of Electronic Science,Northeastern Petroleum University；Science and Technology Innovation Team in Heilongjiang Province "Fault Deformation,Sealing and Fluid Migration"）.Donor impurity-related optical absorption coefficients and refractive index changes in a rectangular GaAs quantum dot in the presence of electric field[J].Journal of Semiconductors,2016,第11期刘淼，伍东，王喆垚（Institute of Microelectronics,Tsinghua University）.A readout integrated circuit based on DBI-CTIA and cyclic ADC for MEMS-arraybased focal plane[J].Journal of Semiconductors,2016,第11期 N.Boukhenoufa¹，R.Mahamdi¹，D.Rechem²（Electronic Department， University of Batna， Algeria；Electrical Engineering Department， University of Oum El Bouaghi， Algeria）.Structural，optical，morphologicaland electricalpropertiesofundoped and Al-doped ZnO thin films prepared using sol-gel dip coating process[J].Journal of Semiconductors,2016,第11期首页 1 2 3 4 5 下一页尾页共有9页，转到页

期刊文章列表