期刊的影响因子--文章列表

期刊文章列表
G.I.Zebrev，M.G.Drosdetsky，A.M.Galimov（The Department of Micro- and Nanoelectronics of National Research Nuclear University “MEPHI”）.Non-equilibrium carrier capture，recombination and annealing in thick insulators and their impact on radiation hardness[J].Journal of Semiconductors,2016,第11期 D Nebti,Z Hadjoub，A Guerraoui，F Z Khelifati，A Doghmane（Semiconductor Laboratory,Department of Physics,Faculty of Sciences,Badji Mokhtar Annaba University）.Frequency dispersion investigation of output reactance and capacitance in GaAs MESFETs by means of dielectric loss tangent consideration[J].Journal of Semiconductors,2016,第11期叶春芽，林伟，周瑾，李书平，陈荔，李恒，吴小璇，刘松青，康俊勇（Fujian Provincial Key Laboratory of Semiconductors and Applications， Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices， Department of Physics， Xiamen University）.Optical properties of InN studied by spectroscopic ellipsometry[J].Journal of Semiconductors,2016,第10期苏杰^1，2，刘彤¹，刘京明¹，杨俊¹，沈桂英^1，2，白永彪^1，2，董志远¹，赵有文¹（Key Laboratory of Semiconductor Materials Science， Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices， Institute of Semiconductors， Chinese Academy of Sciences；University of Chinese Academy of Sciences）.Carbon agent chemical vapor transport growth of Ga₂O₃crystal[J].Journal of Semiconductors,2016,第10期 D.Mohra¹，M.Benhaliliba¹，M.Serin²，M.R.Khelladi³，H.Lahmar³，A.Azizi³（Material Technology Department， Physics Faculty， USTO-MB University；Yildiz Technical University， Davutpasa Campus Faculty of Arts & Science， Department of Physics，Solid-state Physics 1014 34220 Esenler；Laboratoire de Chimie， Ingenierie Moleculaire et Nanostructures， Universite Ferhat Abbas-Setif 1）.The investigation of electrodeposited Cu₂O/ITO layers by chronocoulometry process：effect of electrical potential[J].Journal of Semiconductors,2016,第10期雷耀虎，赵志刚，郭金川，李冀，牛憨笨（Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province， College of Optoelectronic Engineering， Shenzhen University）.Disordered wall arrays by photo-assisted electrochemical etching in n-type silicon[J].Journal of Semiconductors,2016,第10期方孺牛¹，孙新²，缪旻³，金玉丰^1，4（National Key Laboratory of Science and Technology on Micro/Nano Fabrication， Peking University；Academy of Information Science Innovation China Electronics Technology Group Corporation；Institute of Information Microsystem， Beijing Information Science & Technology University；Shenzhen Graduate School of Peking University）.Novel through-silicon vias for enhanced signal integrity in 3D integrated systems[J].Journal of Semiconductors,2016,第10期侯云虹¹，张萌¹，韩国威¹，司朝伟¹，赵咏梅^1，2，宁瑾^1，2（Institute of Semiconductors， Chinese Academy of Sciences；State Key Laboratory of Transducer Technology， Chinese Academy of Sciences）.A review：aluminum nitride MEMS contour-mode resonator[J].Journal of Semiconductors,2016,第10期余连杰，苏玉辉，史衍丽，李雄军，赵维艳，马启，太云见，赵鹏（Kunming Institute of Physics）.Persistent photoconductivity of amorphous Hg_0.78Cd_0.22Te：In films[J].Journal of Semiconductors,2016,第10期吴冬雪^1，2，3，马平^1，2，3，刘波亭^1，2，3，张烁^1，2，3，王军喜^1，2，3，李晋闽^1，2，3（Research and Development Center for Solid State Lighting， Institute of Semiconductors， Chinese Academy of Sciences；State Key Laboratory of Solid State Lighting；Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application）.Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates[J].Journal of Semiconductors,2016,第10期陆宏波，李欣益，张玮，周大勇，孙利杰，陈开建（State Key Laboratory of Space Power Technology， Shanghai Institute of Space Power-Source）.Optimizing back surface field for improving V_ocof（Al）GaInP solar cell[J].Journal of Semiconductors,2016,第10期 Hari Shanker Gupta¹，A S Kiran Kumar²，M.Shojaei Baghini¹，Subhananda Chakrabarti¹，Sanjeev Mehta²，Arup Roy Chowdhury²，Dinesh K Sharma¹（Indian Institute of Technology Bombay；Space Applications Centre，Jodhpur Tekra， Ahmedabad， India）.Design of current mirror integration ROIC for snapshot mode operation[J].Journal of Semiconductors,2016,第10期梁峰¹，高本领¹，古宇²（Department of Physics， Huaiyin Institute of Technology；Department of Physic and Siyuan Laboratory， Jinan University）.Magnetic flux assisted thermospin transport in a Rashba ring[J].Journal of Semiconductors,2016,第10期 Patrick W.C.Ho，Haider Abbas F.Almurib，T.Nandha Kumar（Department of Electrical & Electronic Engineering， University of Nottingham Malaysia Campus）.Memristive SRAM cell of seven transistors and one memristor[J].Journal of Semiconductors,2016,第10期 B.Hamawandi¹，M.Noroozi¹，G.Jayakumar²，A.Ergül^1，3，K.Zahmatkesh¹，M.S.Toprak¹，H.H.Radamson²（Functional Materials Division， Department of Materials and Nano Physics， KTH Royal Institute of Technology；Department of Integrated Devices and Circuits， KTH Royal Institute of Technology；Jet Propulsion Laboratory， California Institute of Technology）.Electrical properties of sub-100 nm SiGe nanowires[J].Journal of Semiconductors,2016,第10期郭啸峰，叶凡，任俊彦（State Key Laboratory of ASIC and System， Fudan University）.A 9 b/12 b 50 MS/s experimental ADC with continuous approximation architecture in 65 nm CMOS[J].Journal of Semiconductors,2016,第10期代国定^1，2，修文梁¹，刘跃智¹，亓娅魏¹，董祖奇¹（Institute of Electronic CAD， Xidian University， Xi'an 710071， China；Key Laboratory of High-Speed Circuit Design and EMC， Ministry of Education， Xidian University， Xi'an 710071， China；Institute of Electronic CAD， Xidian University， Xi'an 710071， China）.Load adaptive start-up scheme for synchronous boost DC-DC converter[J].Journal of Semiconductors,2016,第10期 Amandeep Singh，Mamta Khosla，Balwinder Raj（Department of Electronics & Communication， National Institute of Technology， Jalandhar， Punjab， India）.Compact model for ballistic single wall CNTFET under quantum capacitance limit[J].Journal of Semiconductors,2016,第10期 M.Mehrabian¹，Z.Esteki²，H.Shokrvash²，G.Kavei³（Faculty of Basic Science， University of Maragheh；Department of Materials Engineering， Faculty of Engineering， University of Maragheh；Material and Energy Research Centre）.Optical and electrical properties of copper-incorporated ZnS films applicable as solar cell absorbers[J].Journal of Semiconductors,2016,第10期娄正¹，梁中翥²，沈国震¹（Institute of Semiconductors， Chinese Academy of Sciences；State Key Laboratory of Applied Optics， Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences）.Photodetectors based on two dimensional materials[J].半导体学报(英文版),2016,第9期张章，谭烨，曾剑敏，韩旭，程心，解光军（School of Electronics Science and Applied Physics， Hefei University of Technology）.A monolithic integrated low-voltage deep brain stimulator with wireless power and data transmission[J].半导体学报(英文版),2016,第9期毛怿奇^1，2，高同强^1，2，许晓冬¹，杨海钢^1，2，蔡新霞^1，2（Institute of Electronics， Chinese Academy of Sciences；University of Chinese Academy of Sciences）.A fully integrated CMOS super-regenerative wake-up receiver for EEG applications[J].半导体学报(英文版),2016,第9期廖昌俊¹，刘继芝²，刘志伟²（School of Communication and Information Engineering， University of Electronic Science and Technology of China；State Key Laboratory of Electronic Thin Films and Integrate Devices， University of Electronic Science and Technology of China）.A novel HBT trigger SCR in 0.35 μm SiGe BiCMOS technology[J].半导体学报(英文版),2016,第9期 S.Jantrasee¹，P.Moontragoon²，S.Pinitsoontorn²（Materials Science and Nanotechnology Program， Faculty of Science， Khon Kaen University；Department of Physics， Faculty of Science， Khon Kaen University）.Thermoelectric properties of Al-doped ZnO:experiment and simulation[J].半导体学报(英文版),2016,第9期 Savitesh Madhulika Sharma，S.Dasgupta，M.V.Kartikeyan（Microelectonics and VLSI Group， Department of Electronics and Communication Engineering， Indian Institute of Technology）.A transformed analytical model for thermal noise of FinFET based on fringing field approximation[J].半导体学报(英文版),2016,第9期赖淑妹¹，毛丹枫¹，黄志伟¹，许怡红¹，陈松岩¹，李成¹，黄巍¹，汤丁亮²（Department of Physics， Xiamen University；College of Chemistry and Chemical Engineering， Xiamen University）.A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity[J].半导体学报(英文版),2016,第9期王彧，刘静，闫娜，闵昊（State Key Laboratory of ASIC and System， Fudan University）.A low-noise widely tunable Gm-C filter with frequency calibration[J].半导体学报(英文版),2016,第9期徐卫林，吴迪，韦雪明，韦保林，段吉海，归发弟（Guangxi Key Laboratory of Precision Navigation Technology and Application， Guilin University of Electronic Technology）.Low-noise sub-harmonic injection locked multiloop ring oscillator[J].半导体学报(英文版),2016,第9期蒋智，庄奕琪，李聪，王萍，刘予琪（School of Microelectronic， Xidian University）.Vertical-dual-source tunnel FETs with steeper subthreshold swing[J].半导体学报(英文版),2016,第9期首页上一页 1 2 3 4 5 下一页尾页共有9页，转到页

期刊文章列表