期刊的影响因子--文章列表

期刊文章列表
甘波，魏廷存，高武，胡永才（School of Computer Science and Technology, Northwestern Polytechnical University）.Design and performances of a low-noise and radiation-hardened readout ASIC for CdZnTe detectors[J].半导体学报(英文版),2016,第6期高涛^1，2，徐锐敏¹，张凯²，孔月婵²，周建军²，孔岑²，郁鑫鑫²，董迅²，陈堂胜²（Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC)；Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute）.High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer[J].半导体学报(英文版),2016,第6期刘远¹，刘玉荣²，何玉娟¹，李斌²，恩云飞¹，方文啸¹（Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI；School of Electronic and Information Engineering, South China University of Technology）.Low-frequency noise characteristics in the MOSFETs processed in 65 nm technology[J].半导体学报(英文版),2016,第6期 Wang Chong，Wei Xiaoxiao，He Yunlong，Zheng Xuefeng，Ma Xiaohua，Zhang Jincheng，Hao Yue（Key Lab of Wide Band Gap Semiconductor Materials and Devices, Institute of Microelectronics, Xidian University）.Effects of the fluorine plasma treatment on low-density drain AlGaN/GaN HEMT[J].半导体学报(英文版),2016,第6期 Pramod Kumar Tiwari，Mukesh Kumar，Ramavathu Sakru Naik，Gopi Krishna Saramekala（Department of Electronics and Communication Engineering, National Institute of Technology）.Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs[J].半导体学报(英文版),2016,第6期 Ni Yuxi，Ma Xiaoyu，Jing Hongqi，Liu Suping（National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences）.Finite element analysis of expansion-matched submounts for high-power laser diodes packaging[J].半导体学报(英文版),2016,第6期 An Pingbo，Wang Li，Lu Hongxi，Yu Zhiguo，Liu Lei，Xi Xin，Zhao Lixia（Semiconductor Lighting Research & Development Center, Institute of Semiconductors, Chinese Academy of Sciences）.Evaluation of light extraction efficiency for the light-emitting diodes based on the transfer matrix formalism and ray-tracing method[J].半导体学报(英文版),2016,第6期 Zhang Bowen，Zhang Xiaoling，Xiong Wenwen，She Shuojie，Xie Xuesong（College of Electronic Information & Control Engineering, Beijing University of Technology）.The investigation of the zero temperature coefficient point of power MOSFET[J].半导体学报(英文版),2016,第6期 Suranjana Banerjee，Monojit Mitra（Indian Institute of Engineering Science and Technology）.Large signal and noise properties of heterojunction Al_xGa_1-xAs/GaAs DDR IMPATTs[J].半导体学报(英文版),2016,第6期 Gao Chuang，Zhao Xing，Zhao Kai，Gao Jiantou，Xie Bingqing，Yu Fang，Luo Jiajun（Institute of Microelectronics of Chinese Academy of Sciences, Key Laboratory of Special Devices Technologies）.DSOI—a novel structure enabling adjust circuit dynamically[J].半导体学报(英文版),2016,第6期 Patrick W.C.Ho，Firas Odai Hatem，Haider Abbas F.Almurib，T.Nandha Kumar（Department of Electrical and Electronic Engineering, University of Nottingham Malaysia Campus）.Comparison between Pt/TiO₂/Pt and Pt/TaO_X/TaO_Y/Pt based bipolar resistive switching devices[J].半导体学报(英文版),2016,第6期 Najdia Benaziez¹，Abdelhamid Ounissi²，Safia Benaziez¹（Department of Physics, Hadj Lakhdar University；Department of Electronics, Batna University）.Enhancement of solar cells parameters by periodic nanocylinders[J].Journal of Semiconductors,2016,第6期 ZhongBo钟波，andZhuZhangming朱樟明（School of Microelectronics， Xidian University， Xi'an 710071， China）.A 0.1-1.5 GHz, low jitter, area efficient PLL in 55-nm CMOS process[J].Journal of Semiconductors,2016,第5期李雪民，叶茂，赵公元，张赟，赵毅强（SchoolofElectronicInformationandEngineeringTianjinUniversity）.A new curvature compensation technique for CMOS voltage reference using \|V_GS\| and ΔV_BE[J].Journal of Semiconductors,2016,第5期王小青，俞育德，宁瑾（State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences）.Researching the silicon direct wafer bonding with interfacial SiO₂ layer[J].半导体学报(英文版),2016,第5期刘溪¹，刘倩^1，2，靳哓诗¹，赵永瑞^2，3，李宗昊⁴（School of Information Science and Engineering Shenyang University of Technology；North-China Integrated Circuit Design CO. Ltd；The 13th Research Institute CETC；School of EECS Eng.and ISRC (Inter-University Semiconductor Research Center) Seoul National University）.Negative voltage bandgap reference with multilevel curvature compensation technique[J].半导体学报(英文版),2016,第5期程知群¹，颜国国^1，2，倪文华²，朱丹丹¹，徐文华²，李进²，陈帅¹，刘国华¹（Key Laboratory of RF Circuit and System Education Ministry Hangzhou Dianzi University；Hangzhou Canaan Tek Co. Ltd.）.15158A SP6T RF switch based on IBM SOI CMOS technology[J].半导体学报(英文版),2016,第5期王晶晶，冯泽民，徐荣金，陈迟晓，叶凡，许俊，任俊彦（StateKeyLaboratoryofASICandSystem,FudanUniversity）.A 100 MS/s 9 bit 0.43 m W SAR ADC with custom capacitor array[J].半导体学报(英文版),2016,第5期陈永和¹，郑雪峰¹，张进城¹，马晓华²，郝跃¹（KeyLaboratoryforWideBand-GapSemiconductorMaterialsandDevices,SchoolofMicroelectronics,XidianUniversity；SchoolofAdvancedMaterialsandNanotechnology,XidianUniversity）.Monolithically integrated enhancement/depletion-mode Al Ga N/Ga N HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment[J].半导体学报(英文版),2016,第5期霍如如^1，2，蔡道林¹，陈邦明¹，陈一峰¹，王玉婵¹，王月青¹，魏宏阳¹，王青¹，夏洋洋¹，高丹¹，宋志棠¹（Shanghai Institute of Micro-System and Information Technology；Shanghai Tech University）.Endurance characteristics of phase change memory cells[J].半导体学报(英文版),2016,第5期陈旭东¹，成建兵^1，2，滕国兵¹，郭厚东¹（CollegeofElectronicScienceandEngineering,NanjingUniversityofPostsandTelecommunications；NationalApplication-SpecificIntegratedCircuit(ASIC)SystemEngineeringResearchCenter,SoutheastUniversity）.Novel trench gate field stop IGBT with trench shorted anode[J].半导体学报(英文版),2016,第5期曹琛¹，张冰¹，王俊峰¹，吴龙胜²（Xi’an Microelectronics Technology Institute；Xi’anMicroelectronicsTechnologyInstitute）.Measurement of charge transfer potential barrier in pinned photodiode CMOS image sensors[J].半导体学报(英文版),2016,第5期杜文芳，吕信江，陈星弼（State Key Laboratory of Electronic Thin Films and Integrated Devices of China, University of Electronic Science and Technology of China）.An LDMOS with large SOA and low specific on-resistance[J].半导体学报(英文版),2016,第5期 Ambika Prasad Shah¹，Vaibhav Neema¹，Shreeniwas Daulatabad²（Electronics & Telecommunication Engineering Department, IET-Devi Ahilya University；Electrical Engineering Department, Indian Institute of Technology）.DOIND:a technique for leakage reduction in nanoscale domino logic circuits[J].半导体学报(英文版),2016,第5期袁文宇，徐静平，刘璐，黄勇，程智翔（SchoolofOpticalandElectronicInformation,HuazhongUniversityofScienceandTechnology）.Improved interfacial and electrical properties of Ge MOS devices with ZrON/GeON dual passivation layer[J].半导体学报(英文版),2016,第5期吴亚美，杨瑞霞，田汉民，陈帅（HebeiUniversityofTechnology,TianjinKeyLaboratoryofElectronicMaterialsandDevices）.Photoelectric characteristics of CH₃NH₃PbI₃/p-Si heterojunction[J].半导体学报(英文版),2016,第5期 Sunil H.Chaki，Mahesh D.Chaudhary，M.P.Deshpande（P.G.Department of Physics, Sardar Patel University）.SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques[J].半导体学报(英文版),2016,第5期夏从新¹，李京波²（Department of Physics Henan Normal University；Institute of Semiconductors Chinese Academy of Sciences）.Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides[J].Journal of Semiconductors,2016,第5期徐昊，杨红，王艳蓉，王文武，万光星，任尚清，罗维春，祁路伟，赵超，陈大鹏，刘新宇，叶甜春（Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences）.Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks[J].半导体学报(英文版),2016,第5期首页上一页 3 4 5 6 7 下一页尾页共有9页，转到页

期刊文章列表