期刊的影响因子--文章列表

期刊文章列表
张金成，史成武，陈军军，应超，吴妮，王茂（SCHOOl OF CHEmISTRy AND CHEmICAl ENGINEERING，HEFEI UNIVERSITy OF TECHNOlOGy）.PyrolysispreparationofWO₃thinfilmsusingammoniummetatungstateDMF/water solution for efficient compact layers in planar perovskite solar cells[J].半导体学报(英文版),2016,第3期赵启凤¹，庄奕琪¹，包军林¹，胡为²（SCHOOl OF MICROElECTRONICS XIDIAN UNIVERSITy；SCHOOl OF MECHANO-ElECTRONIC ENGINEERING XIDIAN UNIVERSITy）.Radiation-induced 1/f noise degradation of bipolar linear voltage regulator[J].半导体学报(英文版),2016,第3期马新国^1，2，严杰¹，刘娜¹，祝林¹，王贝¹，黄楚云^1，2，吕辉^1，2（SCHOOl OF SCIENCE HUBEI UNIVERSITy OF TECHNOlOGy；HUBEI COllABORATIVE INNOVATION CENTER FOR HIGH-EFFICIENCy UTIlIZATION OF SOlAR ENERGy HUBEI UNIVERSITy OF TECHNOlOGy）.Effect of relaxation on the energetics and electronic structure of clean Ag₃PO₄(111) surface[J].半导体学报(英文版),2016,第3期张辉，李丹，万磊，张辉，王海军，高远，朱腓利，王紫琪，丁学欣（ADC PRODUCTS DEVElOPmENT GROUP，SHANGHAI BEllING CO.LTD）.A 430 mW 16 b 170 MS/s CMOS pipelined ADC with 77.2 dB SNR and 97.6 dB SFDR[J].半导体学报(英文版),2016,第3期王晓飞¹，张鸿²，张杰²，杜鑫²，郝跃¹（DEPARTmENT OF MICROElECTRONICS，XI’AN JIAOTONG UNIVERSITy；STATE KEy LABORATORy OF WIDE BANDGAP SEmICONDUCTOR TECHNOlOGy DISCIPlINES，SCHOOl OF MICROElECTRONICS，XIDIAN UNIVERSITy）.A SHA-less 14-bit,100-MS/s pipelined ADC with comparator offset cancellation in background[J].半导体学报(英文版),2016,第3期阮伟华，胡庆生（INSTITUTE OF RF-&OE-lCS，SOUTHEAST UNIVERSITy）.A 0.18 μm CMOS transmit physical coding sublayer IC for 100G Ethernet[J].半导体学报(英文版),2016,第3期刘晓阳^1，2，马鹤^1，2，于大全^1，2，陈文录^1，2，吴小龙^1，2（Jiangnan Institute of Computing Technology；Institute of Microelectronics, Chinese Academy of Sciences）.Optimal design analysis for thermal performance of high power 2.5D package[J].半导体学报(英文版),2016,第3期苑军军^1，2，方泽波²，朱燕艳¹，姚博²，刘士彦²，何刚³，谭永胜²（DEPARTmENT OF MATHEmATICS AND PHySICS SHANGHAI UNIVERSITy OF ElECTRIC POwER；DEPARTmENT OF PHySICS SHAOXING UNIVERSITy；SCHOOl OF PHySICS AND MATERIAlS SCIENCE ANHUI KEy LABORATORy OF INFORmATION MATERIAlS AND DEVICES ANHUI UNIVERSITy）.Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors[J].半导体学报(英文版),2016,第3期胡为，庄奕琪，包军林，赵启凤（SCHOOl OF MECHANO-ElECTRONIC ENGINEERING，XIDIAN UNIVERSITy）.Total dose effects on the g–r noise of JFET transistors[J].半导体学报(英文版),2016,第3期 S.Intekhab Amin，R.K.Sarin（DEPARTmENT OF ElECTRONICS AND COmmUNICATION ENGINEERING，DR.B.R.AmBEDKAR NATIONAl INSTITUTE OF TECHNOlOGy JAlANDHAR）.Direct tunneling gate current model for symmetric double gate junctionless transistor with SiO₂/high-k gate stacked dielectric[J].半导体学报(英文版),2016,第3期余乐^1，2，郑英奎²，张昇^1，2，庞磊²，魏珂²，马晓华¹（KEy LABORATORy OF WIDE BAND-GAP SEmICONDUCTOR MATERIAlS AND DEVICES，SCHOOl OF ADVANCED MATERIAlS AND NANOTECHNOlOGy，XIDIAN UNIVERSITy；INSTITUTE OF MICROElECTRONICS，CHINESE ACADEmy OF SCIENCES）.Small-signal model parameter extraction for AlGaN/GaN HEMT[J].半导体学报(英文版),2016,第3期 I.B.Kherchachi，A.Attaf，H.Saidi，A.Bouhdjer，H.Bendjedidi，Y.Benkhetta，R.Azizi（PHySICS OF THIN FIlmS AND APPlICATIONS LABORATORy (LPCMA)，UNIVERSITy OF BISKRA）.Structural,optical and electrical properties of Sn_xS_ythin films grown by spray ultrasonic[J].半导体学报(英文版),2016,第3期施剑皓，赵彤，李学潮，霍萌，万润东（Institute of Materials Science and Engineering, Kunming University of Science and Technology）.First-principles calculation on electronic properties of B and N co-doping carbon nanotubes[J].半导体学报(英文版),2016,第3期严利人¹，李岱¹，张伟¹，刘志弘¹，周伟²，王全²（INSTITUTE OF MICROElECTRONICS TSINGHUA UNIVERSITy；SHANGHAI INTEGRATED CIRCUIT RESEARCH & DEVElOPmENT CENTER）.Molecular dynamic simulation of non-melt laser annealing process[J].半导体学报(英文版),2016,第3期 Bi Jinshun(毕津顺)，Han Zhengsheng(韩郑生)（Institute of Microelectronics； Chinese Academy of Sciences）.Corrigendum:Characteristics of HfO₂/Hf-based bipolar resistive memories (2015 J.Semicond.36 064010)[J].Journal of Semiconductors,2016,第3期 Sonal Jain¹，Deepika Gupta²，Vaibhav Neema¹，Santosh Vishwakarma²（IET-DEVI AHIlyA UNIVERSITy；IIT INDORE）.BE-SONOS flash memory along with metal gate and high-k dielectrics in tunnel barrier and its impact on charge retention dynamics[J].半导体学报(英文版),2016,第3期李梦珂，袁丽君，于红艳，阚强，李士颜，米俊萍，潘教青（KEy LABORATORy OF SEmICONDUCTOR MATERIAlS SCIENCE，INSTITUTE OF SEmICONDUCTORS，CHINESE ACADEmy OF SCIENCES）.Designandfabricationof1.55μmbroadareaslottedsingle-modeFabry–Perotlasers[J].半导体学报(英文版),2016,第3期 Swina Narula，Sujata Pandey（Department of Electronics and Communication Engineering, Amity School of Engineering and Technology, Amity University Uttar Pradesh）.High performance 14-bit pipelined redundant signed digit ADC[J].半导体学报(英文版),2016,第3期刘博^1，2，陈晓^1，2，蔡华林^1，2，穆罕默德·阿里·穆罕默德^1，2，田祥光^1，2，陶璐琪^1，2，杨轶^1，2，任天令^1，2（Institute of Microelectronics, Tsinghua University；Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University）.Surface acoustic wave devices for sensor applications[J].半导体学报(英文版),2016,第2期袁丰¹，王志功^1，2，吕晓迎^3，2（Institute of RF- & OE-ICs Southeast University；Co-innovation Center of Neuroregeneration Nantong University；State Key Laboratory of Bioelectronics Southeast University）.A multi-channel analog IC for in vitro neural recording[J].半导体学报(英文版),2016,第2期吉宪^1，2，张晓东²，康维华^1，2，张志利³，周佳辉¹，徐文俊¹，李琦¹，肖功利¹，尹志军¹，蔡勇²，张宝顺³，李海鸥¹（Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology；Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences；Nano Fabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences）.Fabrication of 80-nm T-gate high indium In_0:7Ga_0:3As/In_0:6Ga_0:4As composite channels mHEMT on GaAs substrate with simple technological process[J].半导体学报(英文版),2016,第2期韩婷婷¹，敦少博¹，吕元杰¹，顾国栋²，宋旭波²，王元刚²，徐鹏²，冯志红¹（National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China；Hebei Semiconductor Research Institute, Shijiazhuang 050051, China）.70-nm-gated InAlN/GaN HEMTs grown on SiC substrate with f_T/f_max>160 GHz[J].半导体学报(英文版),2016,第2期王弋宇^1，2，彭朝阳¹，申华军¹，李诚瞻²，吴佳²，唐亚超¹，赵艳黎²，陈喜明²，刘可安²，刘新宇¹（Microwave Device and IC Department Institute of Microelectronics Chinese Academy of Sciences；Zhuzhou CSR Times Electric Co. Ltd）.Characterization of the effects of nitrogen and hydrogen passivation on SiO₂/4H-SiC interface by low temperature conductance measurements[J].半导体学报(英文版),2016,第2期 Shoichiro Nakao^1，2，Yasushi Hirose^1，2，3，Tetsuya Hasegawa^1，2，3（Kanagawa Academy of Science and Technology (KAST)；Japan Science and Technology Agency, CREST；Department of Chemistry, The University of Tokyo）.Effects of reductive annealing on insulating polycrystalline thin films of Nb-doped anatase TiO₂:recovery of high conductivity[J].半导体学报(英文版),2016,第2期李建新，黄福军，宗勇，高静（School of Electronic Information Engineering, Tianjin University）.High-stage analog accumulator for TDI CMOS image sensors[J].半导体学报(英文版),2016,第2期 W.Nakwaski，R.P.Sarza？a（Photonics Group, Institute of Physics, Lodz University of Technology）.Comprehensive and fully self-consistent modeling of modern semiconductor lasers[J].半导体学报(英文版),2016,第2期贾云鹏¹，苏洪源¹，金锐²，胡冬青¹，吴郁¹（Power semiconductor and power integrated circuit laboratory, College of Electronic Information and Control Engineering,Beijing University of Technology；New Electrical Materials and Microelectronics Institute,State Grid Smart Electrical Engineering）.Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET[J].半导体学报(英文版),2016,第2期周佳辉^1，2，常虎东²，张旭芳¹，杨靖治¹，刘桂明¹，李海鸥²，刘洪刚¹（Microwave Device and IC Department Institute of Microelectronics Chinese Academy of Sciences；Guangxi Experiment Center of Information Science Guilin University of Electronic Technology）.Fabrication of a novel RF switch device with high performance using In_0:4Ga_0:6As MOSFET technology[J].半导体学报(英文版),2016,第2期蒋家平¹，盖艳琴²，唐刚²（School of Electric Power Engineering China University of Mining & Technology；Department of Physics School of Sciences China University of Mining and Technology）.Band gap bowing and crossing of B_xGa_1-xN alloy investigated by hybrid functional method[J].半导体学报(英文版),2016,第2期首页上一页 5 6 7 8 9 下一页尾页共有9页，转到页

期刊文章列表