期刊的影响因子--文章列表

期刊文章列表
胡轶¹，李炎²，刘玉岭²，何彦刚²（School of Chemistry & Chemical Engineering Xinjiang Normal University；Institute of Microelectronics Hebei University of Technology）.The optimization of FA/O barrier slurry with respect to removal rate selectivity on patterned Cu wafers[J].半导体学报(英文版),2016,第2期金婕¹，史佳²，艾宝丽²，张旭光²（Shanghai University of Engineering Science；Shanghai Advanced Research Institute Chinese Academy of Sciences）.A highly linear power amplifier for WLAN[J].半导体学报(英文版),2016,第2期孙桂鹏，闫金良，牛培江，孟德兰（School of Physics and Optoelectronic Engineering, Ludong University）.Electronic structure and optical property of p-type Zn-doped SnO₂with Sn vacancy[J].半导体学报(英文版),2016,第2期刘超文，徐静平，刘璐，卢汉汉，黄苑（School of Optical and Electronic Information, Huazhong University of Science and Technology）.A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric[J].半导体学报(英文版),2016,第2期王静敏，杨正，朱樟明，杨银堂（School of Microelectronics, Xidian University）.An ultra-low-voltage rectifier for PE energy harvesting applications[J].半导体学报(英文版),2016,第2期程鹏，吴斌，黑勇（Institute of Microelectronics, Chinese Academy of Sciences）.Design and implementation of IEEE 802.11ac MAC controller in 65 nm CMOS process[J].半导体学报(英文版),2016,第2期 Morteza Enhessari¹，Ali Salehabadi¹，Zeinab Nasrollahi²，Keyvan Ozaee³（Department of Chemistry, Naragh Branch, Islamic Azad University；Department of Chemistry, Varamin-Pishva Branch, Islamic Azad University；Young Researchers and Elite Club, South Tehran Branch, Islamic Azad University）.Ammonia-assisted synthesis method for CoTiO₃nanoporous matrix[J].半导体学报(英文版),2016,第2期 Ma Chunlei，Gu Guodong，Lü Yuanjie（Hebei Semiconductor Research Institute, Shijiazhuang 050051, China；Hebei Semiconductor Research Institute, Shijiazhuang 050051, China；National Key Laboratory of ASIC, Shijiazhuang 050051, China；National Key Laboratory of ASIC, Shijiazhuang 050051, China）.A high performance InAlN/GaN HEMT with low R_onand gate leakage[J].半导体学报(英文版),2016,第2期陈祥叶¹，蔡理²，曾强¹，王新桥¹（Flight Instructor Training Base Air Force Aviation University；College of Science Air Force Engineering University）.Impact of stray charge on interconnect wire via probability model of double-dot system[J].半导体学报(英文版),2016,第2期林子曾^1，2，曹明民^1，2，王盛凯²，李琦¹，肖功利¹，高喜¹，刘洪刚²，李海鸥¹（Guangxi Experiment Center of Information Science Guilin University of Electronic Technology；Microwave Device and IC Department Institute of Microelectronics Chinese Academy of Sciences）.The effect of nitridation and sulfur passivation for In_0:53Ga_0:47As surfaces on their Al/Al₂O₃/InGaAs MOS capacitors properties[J].半导体学报(英文版),2016,第2期蒋梦轩¹，沈征¹，王俊¹，尹新¹，帅智康¹，陆江²（College of Electrical and Information Engineering Hunan University；Institute of Microelectronics Chinese Academy of Sciences）.A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact[J].半导体学报(英文版),2016,第2期 Li Ye，Chen Junfang，Ma Junhui，Zhou Lifen（Institute of Physics and Telecommunication Engineering, South China Normal University）.The optimization functions ofICP discharge in preparation ofCu–Zn–Sn precursors and CZTS films by co-evaporation[J].半导体学报(英文版),2016,第2期韩婷婷，敦少博，吕元杰，顾国栋，宋旭波，王元刚，徐鹏，冯志红（National Key Laboratory ofASIC,Hebei Semiconductor Research Institute,Shijiazhuang 050051,China；Hebei Semiconductor Research Institute,Shijiazhuang 050051,China）.70-nm-gated InAIN/GaN HEMTs grown on SiC substrate with fT/fmax 〉 160 GHz[J].半导体学报(英文版),2016,第2期 Tetsuya Shimogaki，Masahiro Takahashi，Masaaki Yamasaki，Taichi Fukuda，Mitsuhiro Higashihata，Hiroshi Ikenoue，Daisuke Nakamura，Tatsuo Okada（Department of Information Science and Electrical Engineering, Kyushu University）.Catalyst-free growth of ZnO nanowires on various-oriented sapphire substrates by pulsed-laser deposition[J].半导体学报(英文版),2016,第2期陈培培，李磊，刘辉华（Research Institute of Electronic Science and Technology, University of Electronic Science and Technology of China）.A power-efficient switchable CML driver at 10 Gbps[J].半导体学报(英文版),2016,第2期王菡，谭林（Analog IC Design Department, 24th Research Institute of China Electronics Technology Group Corporation）.A transient-enhanced NMOS low dropout voltage regulator with parallel feedback compensation[J].半导体学报(英文版),2016,第2期 Olawole C.Olukunle，Dilip K.De（Physics Department Covenant University）.Thermo-electronic solar power conversion with a parabolic concentrator[J].半导体学报(英文版),2016,第2期董振，赵懿昊，张奇，王翠鸾，李伟，刘素平，马骁宇（National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences）.High power 980 nm broad area distributed feedback laser with first-order gratings[J].半导体学报(英文版),2016,第2期 Sangeeta Singh，P.N.Kondekar，Pawan Pal（Department of Electronics and Communication Engineering, PDPM-Indian Institute of Information Technology, Design and Manufacturing (IIITDM) Jabalpur Jabalpur）.Transient performance estimation of charge plasma based negative capacitance junctionless tunnel FET[J].半导体学报(英文版),2016,第2期马春雷¹，顾国栋^1，2，吕元杰²（Hebei Semiconductor Research Institute；National Key Laboratory of ASIC）.A high performance InAIN/GaN HEMT with low R_on and gate leakage[J].半导体学报(英文版),2016,第2期汪鹏君，厉康平，张会红（Institute of Circuits and Systems, Ningbo University）.PMGA and its application in area and power optimization for ternary FPRM circuit[J].半导体学报(英文版),2016,第1期陈弘达¹，吴春晖¹，李洪磊¹，陈雄斌¹，高宗余¹，崔世钢²，王琴³（State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences；Tianjin University of Technology and Education；Renmin University of China）.Advances and prospects in visible light communications[J].半导体学报(英文版),2016,第1期刘伟¹，魏廷存¹，李博¹，杨利锋¹，胡永才^1，2（School of Computer Science and Technology, Northwestern Polytechnical University, Xi'an, 710072, China；School of Computer Science and Technology, Northwestern Polytechnical University, Xi'an, 710072, China；Institute Pluridisciplinaire Hubert CURIEN, Strasbourg, France）.A reference voltage in capacitor-resister hybrid SAR ADC for front-end readout system of CZT detector[J].半导体学报(英文版),2016,第1期李翔，赵德刚，江德生，陈平，刘宗顺，朱建军，侍铭，赵丹梅，刘炜（State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences）.Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer[J].半导体学报(英文版),2016,第1期王飞飞，金鹏，吴巨，吴艳华，胡发杰，王占国（Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences）.Active multi-mode-interferometer broadband superluminescent diodes[J].半导体学报(英文版),2016,第1期王海啸¹，郑新和^1，2，甘兴源¹，王乃明¹，杨辉¹（Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences；Department of Physics, University of Science and Technology Beijing）.Designing of 1 eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell[J].半导体学报(英文版),2016,第1期孙顶，葛阳，张力，许盛之，陈泽，王宁，梁雪娇，魏长春，赵颖，张晓丹（Institute of Photo Electronics Thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology）.Impact of Cu-rich growth on the Cu₂ZnSnSe₄surface morphology and related solar cells behavior[J].半导体学报(英文版),2016,第1期 Liu Li，Li Shouchun，Guo Xin，He Yue，Wang Lianyuan（State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China）.Excellent performance of gas sensor based on In₂O₃-Fe₂O₃nanotubes[J].半导体学报(英文版),2016,第1期陈敏¹，刘云涛²，李志超¹，肖璟博¹，陈杰¹（Institute of Microelectronics Chinese Academy of Sciences；College of Information and Communication Engineering Harbin Engineering University）.A low jitter supply regulated charge pump PLL with self-calibration[J].半导体学报(英文版),2016,第1期首页上一页 6 7 8 9 下一页尾页共有9页，转到页

期刊文章列表