期刊的影响因子--文章列表

期刊文章列表
李冬，孟桥，黎飞（Institute of RF-& OE-ICs, Southeast University）.A 10 bit 50 MS/s SAR ADC with partial split capacitor switching scheme in 0.18 μm CMOS[J].半导体学报(英文版),2016,第1期王文超¹，姬晔²，张勇²，王子莹²，张彤^2，3（CollegeofScienceandArtsZhejiangScienceandTechnologyUniversity；StateKeyLaboratoryofIntegratedOptoelectronicsCollegeofElectronicScienceandEngineeringJilinUniversity；StateKeyLaboratoryofTransducerTechnologyChineseAcademyofSciences）.Green preparation of Au nanoparticles for electrochemical detection of H₂O₂[J].Journal of Semiconductors,2016,第1期 A.Divay¹，O.Latry¹，C.Duperrier²，F.Temcamani³（Groupe de Physique des Matériaux, Université et INSA de Rouen-UMR CNRS 6634-Normandie Université；University of Cergy；ECS-Lab）.Ageing of GaN HEMT devices:which degradation indicators?[J].半导体学报(英文版),2016,第1期许亚兰^1，2，江金光¹，刘江华¹（GNSS Research Center Wuhan University；School of Electronic and Communication Engineering Shenzhen Polytechnic）.Wide band low phase noise QVCO based on superharmonic injection locking[J].半导体学报(英文版),2016,第1期郑宗华^1，2，孙玲玲²，刘军²，张胜洲^1，2（Institute of VLSI Design, Zhejiang University；The Key Laboratory for RF Circuits and Systems of Ministry of Education, Hangzhou Dianzi University）.A novel loss compensation technique analysis and design for 60 GHz CMOS SPDT switch[J].半导体学报(英文版),2016,第1期肖运昌¹，朱昌勇²，王日兴¹（College of Electrical and Information Engineering Hunan University of Arts and Science；Department of Physics Shaoguan University）.Arbitrary magnetic field modulations to a semiconductor pump with two types of spin-orbit couplings[J].半导体学报(英文版),2016,第1期秦旭东，陈涌海，刘雨，朱来攀，李远，邬庆，黄威（Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences）.New method for thickness determination and microscopic imaging of graphene-like two-dimensional materials[J].半导体学报(英文版),2016,第1期杨弼杰¹，周宁²，孙泉华¹（State Key Laboratory of High Temperature Gas Dynamics, Institute of Mechanics, Chinese Academy of Sciences；Advanced Micro-Fabrication Equipment Inc）.Numerical analysis of the non-equilibrium plasma flow in the gaseous electronics conference reference reactor[J].半导体学报(英文版),2016,第1期 Jia Yunfang，Ju Cheng（College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China）.Sentaurus^®based modeling and simulation for GFET’s characteristic for ssDNA immobilization and hybridization[J].半导体学报(英文版),2016,第1期郭文涛，杜峰，谭满清，焦健，郭小峰（Institute of Semiconductors, Chinese Academy of Sciences）.Theoretical study on erbium ytterbium co-doped super-fluorescent fiber source[J].半导体学报(英文版),2016,第1期曹可慰¹，付丙磊²，刘喆²，赵丽霞²，李晋闽²，王军喜²（Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences；Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences）.Anomalous luminescence efficiency enhancement of short-term aged GaN-based blue light-emitting diodes[J].半导体学报(英文版),2016,第1期 Tadatsugu Minami，Yuki Nishi，Toshihiro Miyata（Optoelectronic Device System R&D Center, Kanazawa Institute of Technology）.Cu₂O-based solar cells using oxide semiconductors[J].半导体学报(英文版),2016,第1期冯翠月，刘玉岭，孙鸣，张文倩，张金，王帅（Institute of Microelectronics, Hebei University of Technology）.Investigation of aluminum gate CMP in a novel alkaline solution[J].半导体学报(英文版),2016,第1期 Wang Haixiao，Zheng Xinhe，Gan Xingyuan，Wang Naiming，Yang Hui（Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academyof Sciences, Suzhou 215123, China；Department of Physics, University of Science and Technology Beijing, Beijing 10086, China）.Designing of I eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell[J].半导体学报(英文版),2016,第1期 Rahul Kumar¹，Ritu Srivastava²，Punita Singh²（Indian Institute of Technology Bombay；National Physical Laboratory）.Synthesis and electroluminescence characterization of a new aluminum complex，［8-hydroxyquinoline］bis［2，2’bipyridine］aluminum Al（Bpy）₂q[J].半导体学报(英文版),2016,第1期 Sun Ding，Ge Yang，Zhang Li，Xu Shengzhi，Chen Ze，Wang Ning，Liang Xuejiao，Wei Changchun，Zhao Ying，Zhang Xiaodan（Institute of Photo Electronics Thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic ThinFilm Devices and Technology, Tianjin 300071, China）.Impact of Cu-rich growth on the CueZnSnSe4 surface morphology and related solar cells behavior[J].半导体学报(英文版),2016,第1期 Tangudu Bharat Kumar¹，Bahniman Ghosh^2，3，Bhaskar Awadhiya⁴，Ankit Kumar Verma⁵（Department of Electronics and Communications, Malaviya National Institute of Technology；Microelectronics Research Center, 10100 Burnet Road, Bldg. 160, University of Texas at Austin；Department of Electrical Engineering, Indian Institute of Technology Kanpur；Department of Electronics and Communications, Manipal Institute of Technology, Manipal University；Electronics and Communication Engineering Department, National Institute of Technology）.Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys[J].半导体学报(英文版),2016,第1期韩越，乔树山，黑勇（Institute of Microelectronics, Chinese Academy of Sciences）.Ahigh-linearity and high-resolution delay line structure with a calibration algorithm in delay-based LINC transmitters[J].半导体学报(英文版),2016,第1期首页上一页 7 8 9 尾页共有9页，转到页

期刊文章列表