期刊的影响因子--文章列表

期刊文章列表
毕秀文，梁海莲，顾晓峰，黄龙（Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering,Jiangnan University）.Design of novel DDSCR with embedded PNP structure for ESD protection[J].半导体学报(英文版),2015,第12期陈弘达¹，张赞¹，黄北举¹，毛陆虹²，张赞允³（State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences；Department of Electronics and Information Engineering, Tianjin University；School of Electronics and Information Engineering, Tianjin Polytechnic University）.Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits[J].半导体学报(英文版),2015,第12期刘珂，杜占坤，邵莉，马骁（Institute of Microelectronics, Chinese Academy of Sciences）.A trimming technique for capacitive SAR ADC as sensor interface[J].半导体学报(英文版),2015,第12期 Cholho Jang^1，2，叶志镇¹，吕建国¹（State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University；Department of Materials Science, Kim Il Sung University）.Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature[J].半导体学报(英文版),2015,第12期黄杨¹，徐跃^1，2，郭宇锋^1，2（College of Electronic Science & Engineering, Nanjing University of Posts and Telecommunications；Jiangsu Provincial Engineering Laboratory of RF Integration & Micro-Packaging）.Performance prediction of four-contact vertical Hall-devices using a conformal mapping technique[J].半导体学报(英文版),2015,第12期 Liu Chen，Zhang Yuming，Zhang Yimen，Lü Hongliang，Lu Bin（School of Microelectronics and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University）.Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO₂ films in p-GaAs metal–oxide–semiconductor capacitors[J].半导体学报(英文版),2015,第12期岳情情，闫金良，孟德兰（School of Physics and Optoelectronic Engineering, Ludong University）.Transparent and conductive PEDOT：PSS/Ag NW/PEDOT：PSS hybrid films prepared by spin-coating at room temperature[J].半导体学报(英文版),2015,第12期 K.Mahmood¹，N.Amin¹，A.Ali¹，M.Ajaz un Nabi¹，M.Imran Arshad¹，M.Zafar²，M.Asghar²（Department of Physics, GC University Faisalabad；Department of Physics, Islamia University of Bahawalpur）.Enhancement of phosphors-solubility in ZnO by thermal annealing[J].半导体学报(英文版),2015,第12期韩超¹，张玉明¹，宋庆文^1，2，汤晓燕¹，郭辉¹，张义门¹，杨霏³，钮应喜³（School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices；School of Advanced Materials and Nanotechnology, Xidian University；State Grid Smart Grid Research Institute）.Interface annealing characterization of Ti/Al/Au ohmic contacts to p-type 4H-SiC[J].半导体学报(英文版),2015,第12期刘剑，黄仕华，何绿（Physics Department, Zhejiang Normal University）.Metal-catalyzed growth of In₂O₃ nanotowers using thermal evaporation and oxidation method[J].半导体学报(英文版),2015,第12期洪姣^1，2，刘玉岭^1，2，张保国^1，2，牛新环^1，2，韩力英¹（School of Electronic Information Engineering, Hebei University of Technology；Tianjin Key Laboratory of Electronic Materials and Devices）.A new kind of chelating agent with low pH value applied in the TSV CMP slurry[J].半导体学报(英文版),2015,第12期付英春，王晓峰，马刘红，周亚玲，杨香，王晓东，杨富华（Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences）.High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned process[J].半导体学报(英文版),2015,第12期贾少华，刘玉岭，王辰伟，闫辰奇（Institute of Microelectronics, Hebei University of Technology）.Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization[J].半导体学报(英文版),2015,第12期 Jiji Koshy，Soosen Samuel.M，Anoop Chandran，K.C.George（Department of Physics, S.B.College）.Correlated barrier hopping of CuO nanoparticles[J].半导体学报(英文版),2015,第12期 Anna V.Krivosheeva¹，Victor L.Shaposhnikov¹，Victor E.Borisenko¹，Jean-Louis Lazzari²，Chow Waileong^3，4，Julia Gusakova^1，3，Beng Kang Tay^3，4（Belarusian State University of Informatics and Radioelectronics；CNRS, Aix-Marseille Université；NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University；CINTRA CNRS,NTU,THALES, Nanyang Technological University）.Theoretical study of defect impact on two-dimensional MoS₂[J].半导体学报(英文版),2015,第12期夏兴衡¹，吴为敬¹，宋小峰¹，李冠明¹，周雷²，张立荣²，徐苗¹，王磊¹，彭俊彪¹（State Key Laboratory of Luminescent Materials and Devices, South China University of Technology；New Vision Opto-Electronic Technology Co., Ltd.）.High-speed low-power voltage-programmed driving scheme for AMOLED displays[J].半导体学报(英文版),2015,第12期秦剑^1，2，姚若河¹（School of Electronic and Information Engineering, South China University of Technology；Department of Electrical and Electronics Engineering, Guangzhou University）.Modeling of current–voltage characteristics for dual-gate amorphous silicon thin-film transistors considering deep Gaussian density-of-state distribution[J].半导体学报(英文版),2015,第12期蒋梦轩¹，沈征¹，王俊¹，帅智康¹，尹新¹，孙冰冰²，廖淋圆¹（College of Electrical and Information Engineering, Hunan University；State Grid Bengbu Power Supply Company）.An insulated gate bipolar transistor with surface n-type barrier[J].半导体学报(英文版),2015,第12期林俊明，章国豪，郑耀华，李思臻，张志浩，陈思弟（Guangdong University of Technology）.Design of broadband class-F power amplifier with high-order harmonic suppression for S-band application[J].半导体学报(英文版),2015,第12期 H.Bendjedidi¹，A.Attaf¹，H.Saidi¹，M.S.Aida²，S.Semmari¹，A.Bouhdjar¹，Y.Benkhetta¹（Laboratoire de Physique des Couches Minces et Applications, Université de Biskra；Laboratoire des Couches minces et Interfaces, Université Mentouri）.Properties of n-type SnO₂ semiconductor prepared by spray ultrasonic technique for photovoltaic applications[J].半导体学报(英文版),2015,第12期曹东华，王惠，魏红军，杨伟强（Jingao Solar Holdings Co., Ltd）.Preparation, electronic structure, and photoluminescent properties of Eu²⁺ activated BaSi₂O₅ powder phosphors for solid-state lighting[J].半导体学报(英文版),2015,第12期 Kamal Zeghdar¹，Lakhdar Dehimi^1，2，Achour Saadoune¹，Nouredine Sengouga¹（Laboratory of Metallic and Semi-conducting Materials (LMSM), Université de Biskra；Faculty of Science, Université de Batna）.Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode[J].半导体学报(英文版),2015,第12期 M Errai¹，A El Kaaouachi¹，H El Idrissi²（Physics Department, Ibn Zohr University, Faculty of Sciences；Laboratoire Electronique, électrotechnique, Automatique et Traitement de l’Information, Département Génie Electrique,Faculté des Sciences et Techniques de Mohammedia, Université Hassan II Mohammedia Casablanca）.Variable range hopping conduction in n-CdSe samples at very low temperature[J].半导体学报(英文版),2015,第12期戈勤，陶洪琪，余旭明（Nanjing Electronic Devices Institute）.A 1.8–3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC[J].半导体学报(英文版),2015,第12期姜柯^1，2，3，陆妩^1，2，郭旗^1，2，何承发^1，2，王信^1，2，3，刘默寒^1，2，3，李小龙^1，2，3（Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences；Xinjiang Key Laboratory of Electronic Information Material and Device；University of Chinese Academy of Sciences）.Proton radiation effect of NPN-input operational amplifier under different bias conditions[J].半导体学报(英文版),2015,第12期 M.Yeganeh，N.Balkanian，Sh.Rahmatallahpur（West North Research Complex）.Nanoscale potential barrier distributions and their effect on current transport in Ni/n type Si Schottky diode[J].半导体学报(英文版),2015,第12期赵雯¹，郭晓强¹，陈伟¹，郭红霞¹，林东生¹，王汉宁²，罗尹虹¹，丁李利¹，王园明¹（State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology；Beijing Microelectronics Technology Institute）.Experimental study on the single event effects in pulse width modulators by laser testing[J].半导体学报(英文版),2015,第11期首页 1 2 3 4 5 下一页尾页共有13页，转到页

期刊文章列表