期刊的影响因子--文章列表

期刊文章列表
耿志卿¹，吴南健²（School of Information and Electrical Engineering，Hebei University of Engineering；State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences）.A low power wide tuning range baseband filter for multistandard transceivers[J].半导体学报(英文版),2015,第4期赵勇明^1，2，董建荣¹，李奎龙¹，孙玉润¹，曾徐路¹，何洋^1，2，于淑珍¹，杨辉¹（Key Laboratory of Nanodevices and Applications，Suzhou Institute of Nano-Tech and Nano-Bionics，Chinese Academy of Sciences；University of Chinese Academy of Sciences）.InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells[J].半导体学报(英文版),2015,第4期牛培江，闫金良，孟德兰（School of Physics and Optoelectronic Engineering，Ludong University）.The effects of N-doping and oxygen vacancy on the electronic structure and conductivity of PbTiO₃[J].半导体学报(英文版),2015,第4期 Subhra Chowdhury¹，Swarnabha Chattaraj²，Dhrubes Biswas^1，2（Advanced Technology Development Center，Indian Institute of Technology Kharagpur；Electronics and Electrical Communication Engineering，Indian Institute of Technology Kharagpur）.Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate[J].半导体学报(英文版),2015,第4期 Paragjyoti Gogoi，Rajib Saikia，Sanjib Changmai（Thin Film Laboratory，Department of Physics，Sibsagar College）.Top gate ZnO–Al₂O₃ thin film transistors fabricated using a chemical bath deposition technique[J].半导体学报(英文版),2015,第4期赵颖博，董刚，杨银堂（School of Microelectronics，Xidian University，Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices）.Analysis and optimization of TSV–TSV coupling in three-dimensional integrated circuits[J].半导体学报(英文版),2015,第4期冯帅^1，2，赵利川²，张青竹^1，2，杨鹏鹏^1，2，唐兆云²，吴次南¹，闫江²（College of Big Data and Information Engineering，Guizhou University；Key Laboratory of Microelectronics Devices & Integrated Technology，Institute of Microelectronics，Chinese Academy of Sciences）.A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs[J].半导体学报(英文版),2015,第4期 D.Suresh¹，K.K.Nagarajan¹，R.Srinivasan²（ECE Department,Sri Sivasubramaniya Nadar (SSN) College of Engineering；IT Department,Sri Sivasubramaniya Nadar (SSN) College of Engineering）.The impact of process variations on input impedance and mitigation using a circuit technique in FinFET-based LNA[J].半导体学报(英文版),2015,第4期杨雪，杨浩，张海英，郑新年，戴志伟，李志强，杜泽保（Institute of Microelectronics，Chinese Academy of Sciences）.A monolithic 60GHz balanced low noise amplifier[J].半导体学报(英文版),2015,第4期孔静^1，2，冯美鑫¹，蔡金¹，王辉¹，王怀兵¹，杨辉¹（Key Laboratory of Nanodevices and Applications，Suzhou Institute of Nano-Tech and Nano-Bionics，Chinese Academy of Sciences；University of Chinese Academy of Sciences）.GaN grown on nano-patterned sapphire substrates[J].半导体学报(英文版),2015,第4期刘伟，魏廷存，李博，郭潘杰，胡永才（School of Computer Science and Technology，Northwestern Polytechnical University）.A 12-bit 1MS/s SAR-ADC for multi-channel CdZnTe detectors[J].半导体学报(英文版),2015,第4期任但^1，2，徐小宇¹，屈慧³，任卓翔¹（Institute of Microelectronics，Chinese Academy of Sciences；University of Chinese Academy of Sciences；Institute of Electrical Engineering，Chinese Academy of Sciences）.Two-dimensional parasitic capacitance extraction for integrated circuit with dual discrete geometric methods[J].半导体学报(英文版),2015,第4期洪慧，李石亮，周涛（Institute of Microelectronic CAD，Hangzhou Dianzi University）.Design of a low power 10 bit 300 ksps multi-channel SAR ADC for wireless sensor network applications[J].半导体学报(英文版),2015,第4期苏源¹，向济璇¹，沈骁樱¹，叶凡¹，任俊彦^1，2（State Key Laboratory of ASIC & System；Microelectronics Science and Technology Innovation Platform，Fudan University）.Design of a 1.12Gb/s 11.3mW low-voltage differential signaling transmitter[J].半导体学报(英文版),2015,第4期王锁成，郝永平，刘双杰（Technology Center of CAD/CAM，Shenyang Ligong University）.The design and analysis of a MEMS electrothermal actuator[J].半导体学报(英文版),2015,第4期 Rohit Kumar¹，Bahniman Ghosh^1，2，Shoubhik Gupta³（Department of Electrical Engineering，Indian Institute of Technology Kanpur；Microelectronics Research Center，10100，Burnet Road，Bldg. 160，University of Texas at Austin；University of Glasgow）.Adder design using a 5-input majority gate in a novel “multilayer gate design paradigm” for quantum dot cellular automata circuits[J].半导体学报(英文版),2015,第4期曹文翰（Department of Communication Science and Engineering，Fudan University）.Analytical formulas for carrier density and Fermi energy in semiconductors with a tight-binding band[J].半导体学报(英文版),2015,第4期 Bahniman Ghosh^1，2，Naval Kishor²（Microelectronics Research Center，10100 Burnet Road，Bldg. 160，University of Texas at Austin；Department of Electrical Engineering，Indian Institute of Technology Kanpur）.An ab initio study of strained two-dimensional MoSe₂[J].半导体学报(英文版),2015,第4期 Mini Bhartia，Arun Kumar Chatterjee（Electronics and Communication Department，Thapar Institute of Engineering and Technology）.Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs[J].半导体学报(英文版),2015,第4期 S.S.Shinde，S.Park，J.Shin（Korea Research Institute of Standards and Science）.Spin synthesis of monolayer of SiO₂ thin films[J].半导体学报(英文版),2015,第4期 Abou El-Maaty M.Aly^1，2，A.Nasr^3，2（Power Electronics and Energy Conversion Department,ERI,NRCB；College of Computer,Qassim University；Radiation Engineering Department,NCRRT,Atomic Energy Authority）.The effect of multi-intermediate bands on the behavior of an InAs_1-xN_x/GaAs（1-y）Sb_y quantum dot solar cell[J].半导体学报(英文版),2015,第4期康云，王升，李贤丽（College of Electronic Science, Northeastern Petroleum University）.Electron energy states in a two-dimensional GaAs quantum ring with hydrogenic donor impurity in the presence of magnetic field[J].半导体学报(英文版),2015,第3期杜江锋¹，徐鹏²，王康¹，尹成功¹，刘洋¹，冯志红²，敦少博²，于奇¹（State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China；Science and Technology of ASIC Lab, Hebei Semiconductor Research Institute）.Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances[J].半导体学报(英文版),2015,第3期王冰，古斌，潘荣莹，张思佳，沈建华（Key Laboratory of Testing Technology for Manufacturing Process, Southwest University of Science and Technology-Ministry of Education, School of Manufacturing Science and Engineering, Southwest University of Science and Technology）.Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut^ technology[J].半导体学报(英文版),2015,第3期朱述炎¹，徐静平¹，汪礼胜^1，2，黄苑¹，鄧詠雯³（School of Optical and Electronic Information, Huazhong University of Science and Technology；Department of Physics Science and Technology, Wuhan University of Technology；Department of Applied Physics, The Hong Kong Polytechnic University）.Comparison of interfacial and electrical properties between Al₂O₃ and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric[J].半导体学报(英文版),2015,第3期田晓丽^1，2，陆江¹，滕渊¹，张文亮¹，卢烁今^1，2，朱阳军^1，2（Institute of Microelectronics, Chinese Academy of Sciences；Shanghai Lianxing Electronics Co., Ltd）.Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT[J].半导体学报(英文版),2015,第3期白创，邹雪城，戴葵（School of Optical and Electronic Information, Huazhong University of Science and Technology）.A new physical unclonable function architecture[J].半导体学报(英文版),2015,第3期郑冬梅，王宗篪，肖波齐（College of Electromechanical Engineering, Sanming University）.Optical properties of ionized donor-bound excitons confined in strained wurtzite ZnO/Mg_xZn_1-xO quantum dots[J].半导体学报(英文版),2015,第3期胡轶¹，李炎²，刘玉岭²，何彦刚²（Xinjiang Normal University, School of Chemistry & Chemical Engineering；Institute of Microelectronics, Hebei University of Technology）.Planarization effect evaluation of acid and alkaline slurries in the copper interconnect process[J].半导体学报(英文版),2015,第3期 M.A.Mahadik，Y.M.Hunge，S.S.Shinde，K.Y.Rajpure，C.H.Bhosale（Electrochemical Materials Laboratory, Department of Physics, Shivaji University）.Semiconducting properties of aluminum-doped ZnO thin films grown by spray pyrolysis technique[J].半导体学报(英文版),2015,第3期首页上一页 8 9 10 11 12 下一页尾页共有13页，转到页

期刊文章列表