期刊的影响因子--文章列表

期刊文章列表
田瑞超，罗小蓉，周坤，徐青，魏杰，张波，李肇基（State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China）.A novel high figure-of-merit SOI SJ LDMOS with ultra-strong charge accumulation effect[J].半导体学报(英文版),2015,第3期王勇，刘丹丹，冯国庆，叶镇，高占琦，王晓华（National Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology）.Effect of Pt diffusion barrier layer in Ni/AuGe/Pt/Au on ohmic contact to n-GaAs[J].半导体学报(英文版),2015,第3期李竹^1，2，王志功¹，李智群¹，李芹¹，刘法恩¹（Institute of RF-& OE-ICs,Southeast University；Nanjing University of Science and Technology）.A 3.16–7 GHz transformer-based dual-band CMOS VCO[J].半导体学报(英文版),2015,第3期 Wang Bing，Gu Bin，Pan Rongying，Zhang Sijia，Shen Jianhua（Key Laboratory of Testing Technology for Manufacturing Process，Southwest University of Science and Technology-Ministry of Education，School of Manufacturing Science and Engineering，Southwest University of Science and Technology，Mianyang 621010，China）.Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut(R)technology[J].半导体学报(英文版),2015,第3期韩锴¹，王晓磊²，杨红²，王文武²（Department of Physics and Electronic Science, Weifang University；Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences）.Electric dipole formation at high-k dielectric/SiO₂ interface[J].半导体学报(英文版),2015,第3期 R.M.Hodlur，M.K.Rabinal（Department of Physics, Karnatak University）.Influence of pH of spray solution on optoelectronic properties of cadmium oxide thin films[J].半导体学报(英文版),2015,第3期邓勇，张禾（School of Mechatronic Engineering, Southwest Petroleum University）.Parameter estimation of analog circuits based on the fractional wavelet method[J].半导体学报(英文版),2015,第3期 Shiromani Balmukund Rahi¹，Bahniman Ghosh^1，2，Bhupesh Bishnoi¹（Department of Electrical Engineering,Indian Institute of Technology Kanpur；Microelectronics Research Center, University of Texas at Austin）.Temperature effect on hetero structure junctionless tunnel FET[J].半导体学报(英文版),2015,第3期 Harsimran Kaur，Karamjit Singh Sandha（Department of Electronics and Communication Engineering, Thapar University）.Effect of electric field on metallic SWCNT interconnects for nanoscale technologies[J].半导体学报(英文版),2015,第3期 S.S.Shinde^1，2，T.D.Dongle¹（Shivaji University；Korea Research Institute of Standards and Science）.Modelling of nanostructured TiO₂-based memristors[J].半导体学报(英文版),2015,第3期 Kanjalochan Jena，Raghunandan Swain，T.R.Lenka（Department of Electronics and Communication Engineering, National Institute of Technology Silchar）.Impact of barrier thickness on gate capacitance—modeling and comparative analysis of GaN based MOSHEMTs[J].半导体学报(英文版),2015,第3期靳刚，庄奕琪，阴玥，崔淼（Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University）.A digitally controlled AGC loop circuitry for GNSS receiver chip with a binary weighted accurate dB-linear PGA[J].半导体学报(英文版),2015,第3期裴洋，武海斌（State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences）.Effect of uniaxial strain on the structural, electronic and elastic properties of orthorhombic BiMnO₃[J].半导体学报(英文版),2015,第3期 Shadia J.Ikhmayies¹，Naseem M.Abu El-Haija²，Riyad N.Ahmad-Bitar²（AlIsra University, Faculty of Information Technology, Department of Basic Sciences-Physics；Physics Department, Faculty of Science, University of Jordan）.A comparison between different ohmic contacts for ZnO thin films[J].半导体学报(英文版),2015,第3期 Sonet Kumar Saha¹，M.Azizar Rahman¹，M.R.H.Sarkar²，M.Shahjahan²，M.K.R.Khan²（Department of Physics, Bangladesh University of Engineering and Technology；Department of Physics, University of Rajshahi）.Effect of Co doping on structural, optical, electrical and thermal properties of nanostructured ZnO thin films[J].半导体学报(英文版),2015,第3期 K.Mahmood¹，M.Asghar²，N.Amin¹，Adnan Ali¹（Department of Physics, GC University Faisalabad；Department of Physics, The Islamia University of Bahawalpur）.Phase transformation from cubic ZnS to hexagonal ZnO by thermal annealing[J].半导体学报(英文版),2015,第3期 Kh.S.Karimov^1，2，Noshin Fatima¹，Khaulah Sulaiman³，M.Mahroof Tahir^4，5，Zubair Ahmad³，A.Mateen⁶（Ghulam Ishaq Khan Institute of Engineering Sciences and Technology；Center for Innovative Development of Science and Technologies of Academy of Sciences；Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya；Saint Cloud State University；Department of Chemistry and Earth Sciences；Faculty of Materials Science and Engineering, Institute of Space Technology）.Sensitivity enhancement of OD-and OD-CNT-based humidity sensors by high gravity thin film deposition technique[J].半导体学报(英文版),2015,第3期 Bahniman Ghosh¹，Gaurav Solanki²（Microelectronics Research Center,University of Texas at Austin；Department of Electrical Engineering,Indian Institute of Technology Kanpur）.Voltage assisted control of spin-transfer nano-oscillators[J].半导体学报(英文版),2015,第3期 P.Christina Lily Jasmine¹，A.John Peter²（Department of Physics, N.M.S.Sermathai Vasan College for Women；Department of Physics, Government Arts College）.Magneto-polaron induced intersubband optical transition in a wide band gap Ⅱ–Ⅵ semiconductor quantum dot[J].半导体学报(英文版),2015,第3期王志明¹，吕昕¹，罗晓斌¹，崔玉兴²，孙希国²，默江辉²，付兴昌²，李亮²，何大伟²（Beijing Key Laboratory of Millimeter Wave and Terahertz Technology，Beijing Institute of Technology；National Key Laboratory of Application Specific Integrated Circuit (ASIC)，Hebei Semiconductor Research Institute）.Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz[J].半导体学报(英文版),2015,第2期孙铭斌，高宝红，王辰伟，苗英新，段波，檀柏梅（Institute of Microelectronics，Hebei University of Technology）.Non-ionic surfactant on particles removal in post-CMP cleaning[J].半导体学报(英文版),2015,第2期刘松，单光宝，谢成民，杜欣荣（Department of Postgraduates，Xian Microelectronics Technology Research Institute）.A transmission line-type electrical model for tapered TSV considering MOS effect and frequency-dependent behavior[J].半导体学报(英文版),2015,第2期王晔琳（Department of Electronic Systems，Aalborg University）.X-parameter measurement on a GaN HEMT device：complexity reduction study of load-pull characterization test setup[J].半导体学报(英文版),2015,第2期严婷，张玉明，吕红亮，张义门，武岳，刘一峰（School of Microelectronics，Xidian University，Key Laboratory of Wide-Gap Semiconductor Materials and Devices）.Low phase noise GaAs HBT VCO in Ka-band[J].半导体学报(英文版),2015,第2期王永顺，芮丽，安恒心，汪再兴，刘春娟（School of Electronic and Information Engineering，Lanzhou Jiaotong University）.Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode[J].半导体学报(英文版),2015,第2期李优，吕俊盛，周玉梅，赵建中，陈玉虎，张锋（Institute of Microelectronics，Chinese Academy of Sciences）.A 5 Gb/s low area CDR for embedded clock serial links[J].半导体学报(英文版),2015,第2期江金光^1，2，3，谭高建²，张泽宇⁴，周细凤²（GNSS Research Center，Wuhan University；School of Physics and Technology，Wuhan University；Suzhou Institute，Wuhan University；School of Electronic Information and Electrical Engineering，Shanghai Jiao Tong University）.A novel dimmable LED driver with soft-start and UVLO circuits[J].半导体学报(英文版),2015,第2期左致远^1，2，夏伟^2，3，王钢¹，徐现刚^2，3（School of Physics and Engineering，Sun Yat-Sen University；INSPUR GROUP Shandong Inspur Huaguang Optoelectronics Co.，Ltd；State Key Laboratory of Crystal Material，Shandong University）.Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector[J].半导体学报(英文版),2015,第2期首页上一页 9 10 11 12 13 下一页尾页共有13页，转到页

期刊文章列表