期刊的影响因子--文章列表

期刊文章列表
Liu Weijuan（Institute of Microelectronics，Hebei University of Technology）.Synergic effect of chelating agent and oxidant on chemical mechanical planarization[J].半导体学报(英文版),2015,第2期徐青，罗小蓉，周坤，田瑞超，魏杰，范远航，张波（State Key Laboratory of Electronic Thin Films and Integrated Devices，University of Electronic Science and Technology of China）.Ultralow specific on-resistance high voltage trench SOI LDMOS with enhanced RESURF effect[J].半导体学报(英文版),2015,第2期曹峻松¹，吕欣¹，赵璐冰²，曲爽³，高伟¹（State Key Laboratory of Solid-State Lighting，Beijing Solid-State Lighting Science and Technology Promotion Center；Institute of Semiconductors，Chinese Academy of Sciences；Shandong Inspur Huaguang Optoelectronics Co.，LTD.）.Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE[J].半导体学报(英文版),2015,第2期李琦^1，2，李海鸥¹，翟江辉¹，唐宁¹（Guangxi Experiment Center of Information Science，Guilin University of Electronic Technology；State Key Laboratory of Electronic Thin Films and Integrated Devices，University of Electronic Science and Technology of China）.Novel 700 V high-voltage SOI LDMOS structure with folded drift region[J].半导体学报(英文版),2015,第2期周之蒋^1，2，任坤¹，刘军¹，程伟²，陆海燕²，孙玲玲¹（The Key Laboratory for RF Circuits and Systems of Ministry of Education，Hangzhou Dianzi University；Science and Technology on Monolithic Integrated Circuit and Modules Laboratory，Nanjing Electronic Devices Institute）.Frequency stability of InP HBT over 0.2 to 220 GHz[J].半导体学报(英文版),2015,第2期王多发^1，2，陶海征¹，赵修建¹，吉美妍²，章天金²（State Key Laboratory of Silicate Materials for Architecture，Wuhan University of Technology；Faculty of Materials Science and Engineering，Hubei University）.Enhanced photovoltaic performance in TiO₂/P3HT hybrid solar cell by interface modification[J].半导体学报(英文版),2015,第2期冯朋^1，2，张冶金^1，2，王宇飞²，刘磊^1，2，张斯日古楞^1，2，王海玲^1，2，郑婉华^1，2（State Key Laboratory on Integrated Optoelectronics，Institute of Semiconductors，Chinese Academy of Sciences；Laboratory of Solid-State Optoelectronics Information Technology，Institute of Semiconductors，Chinese Academy of Sciences）.A novel hybrid Ⅲ–Ⅴ/silicon deformed micro-disk single-mode laser[J].半导体学报(英文版),2015,第2期 Muhammad Tariq Saeed Chani¹，Sher Bahadar Khan^1，2，Kh.S.Karimov^3，4，M.Abid³，Abdullah M.Asiri^1，2，Kalsoom Akhtar⁵（Center of Excellence for Advanced Materials Research (CEAMR)，King Abdulaziz University；Chemistry Department，Faculty of Science，King Abdulaziz University；Interdisciplinary Research Center，COMSATS Institute of Information Technology；Physical Technical Institute of Academy of Sciences；Division of Nano Sciences and Department of Chemistry，Ewha Womans University）.Synthesis of metal oxide composite nanosheets and their pressure sensing properties[J].半导体学报(英文版),2015,第2期陈东，仓玉萍，罗永松（College of Physics and Electronic Engineering，Xinyang Normal，Xinyang，Henan 464000，China；College of Physics and Electronic Engineering，Xinyang，Xinyang，Henan 464000，China；College of Physics and Electronic Engineering，Xinyang，Xinyang，Henan 464000，China.）.Electronic structures and phase transition characters of beta-,P61-,P62- and delta-Si_3N_4 under extreme conditions：a density functional theory study[J].半导体学报,2015,第2期陈东，仓玉萍，罗永松（College of Physics and Electronic Engineering，Xinyang Normal University）.Electronic structures and phase transition characters of β-, P61-, P62- and δ-Si₃N₄ under extreme conditions：a density functional theory study[J].半导体学报(英文版),2015,第2期陈东，仓玉萍，罗永松（College of Physics and Electronic Engineering, Xinyang Normal University, Xinyang 464000, China）.Electronic structures and phase transition characters of β-, P61-, P62- and 8-Si3N4 under extreme conditions：a density functional theory study[J].半导体学报(英文版),2015,第2期马力，王志功，徐建，吴毅强，王俊椋，田密，陈建平（Institute of RF-and OE-ICs，Southeast University）.Design of a high linearity and high gain accuracy analog baseband circuit for DAB receiver[J].半导体学报(英文版),2015,第2期曹勇，张海龙，刘丰珍，朱美芳，董刚强（University of Chinese Academy of Sciences）.Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition[J].半导体学报(英文版),2015,第2期 Sabiq Chishti¹，Bahniman Ghosh^1，2，Bhupesh Bishnoi¹（Department of Electrical Engineering，Indian Institute of Technology Kanpur；Microelectronics Research Center，10100 Burnet Road，University of Texas at Austin）.Monte-Carlo simulation studies of the effect of temperature and diameter variation on spin transport in Ⅱ–Ⅵ semiconductor nanowires[J].半导体学报(英文版),2015,第2期 S.S.Shinde，S.Park（Korea Research Institute of Standards and Science）.Oriented colloidal-crystal thin films of polystyrene spheres via spin coating[J].半导体学报(英文版),2015,第2期王亚，薛春莹，李福乐，张春，王志华（Institute of Microelectronics，Tsinghua University）.A low power 11-bit 100 MS/s SAR ADC IP[J].半导体学报(英文版),2015,第2期 Shoubhik Gupta，Bahniman Ghosh，Shiromani Balmukund Rahi（Department of Electrical Engineering，Indian Institute of Technology Kanpur）.Compact analytical model of double gate junction-less field effect transistor comprising quantum-mechanical effect[J].半导体学报(英文版),2015,第2期梁永烨^1，2，Kyungsoo Jang²，S.Velumani³，Cam Phu Thi Nguyen²，Junsin Yi²（National Key Laboratory for Electronic Measurement Technology，North University of China；College of Information and Communication Engineering，Sungkyunkwan University；Department of Electrical Engineering (SEES)，CINVESTAV-IPN，Avenida IPN 6508，San Pedro Zacatenco，Mexico D.F.）.Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor[J].半导体学报(英文版),2015,第2期 Pranav Kumar Asthana（Department of Electrical Engineering，Indian Institute of Technology Kanpur）.High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply[J].半导体学报(英文版),2015,第2期 Gagan Khanduri，Brishbhan Panwar（Centre for Applied Research in Electronics，Indian Institute of Technology Delhi）.A novel approach for justification of box-triangular germanium profile in SiGe HBTs[J].半导体学报(英文版),2015,第2期王凯凯（SKLSM，Institute of Semiconductors，Chinese Academy of Sciences）.Quantum pump effect in a four-terminal mesoscopic structure[J].半导体学报(英文版),2015,第2期袁浩博，刘玉岭，蒋勐婷，陈国栋，刘伟娟，王胜利（Institute of Microelectronics, Hebei University of Technology）.Effect of H₂O₂ and nonionic surfactant in alkaline copper slurry[J].半导体学报(英文版),2015,第1期李赛男^1，2，梁庭^1，2，王伟^1，2，洪应平^1，2，郑庭丽^1，2，熊继军^1，2（Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China),Ministry of Education；Ministry of Education and Science Technology on Electronic Test & Measurement Laboratory. Department of Electronic Science and technology, North University of China）.A novel SOI pressure sensor for high temperature application[J].半导体学报(英文版),2015,第1期李银英，伍晓明，吴华强，钱鹤（Institute of Microelectronics, Tsinghua University）.Redistribution of carbon atoms in Pt substrate for high quality monolayer graphene synthesis[J].半导体学报(英文版),2015,第1期赵银女¹，闫金良²，徐诚阳²（Dean’s Office, Ludong University；School of Physics and Optoelectronic Engineering, Ludong University）.First-principles study on electronic structure and conductivity of Sn-doped Ga_1：375In_0：625O₃[J].半导体学报(英文版),2015,第1期郭辉^1，2，赵亚秋¹，张玉明²，凌显宝¹（Microelectronics School,Xidian University；Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,Xidian University）.Influence of N-type doping on the oxidation rate in n-type 6H-SiC[J].半导体学报(英文版),2015,第1期范艳伟^{1，2，3，4}，周步康^{1，2，3，4}，王军华^1，2，3，陈朝阳^1，2，3，常爱民^1，2，3（Key Laboratory of Functional Materials and Devices for Special Environments of CAS；Xinjiang Key Laboratory of Electronic Information Materials and Devices；Xinjiang Technical Institute of Physics & Chemistry of CAS；University of Chinese Academy of Sciences）.Preparation and thermal-sensitive characteristic of copper doped n-type silicon material[J].半导体学报(英文版),2015,第1期 Yacine Aoun¹，Boubaker Benhaoua²，Brahim Gasmi³，Said Benramache^3，4（Mechanical Department, Faculty of Technology, University of Biskra, Biskra 07000, Algeria；VTRS Laboratory, Institute of Technology, University of El-Oued, El-Oued 39000, Algeria；Laboratoire de Physique des Couches Minces et Application, University of Biskra, Biskra 07000, Algeria；Material Sciences Department, Faculty of Science, University of Biskra, Biskra 07000, Algeria）.Structural, optical and electrical properties of zinc oxide thin films deposited by a spray pyrolysis technique[J].半导体学报(英文版),2015,第1期赵迪¹，罗谦¹，王向展¹，于奇¹，崔伟²，谭开洲²（State Key Laboratory of Electronic Thin Films and Integrated Devices，University of Electronic Science and Technology of China；Science and Technology on Analog Integrated Circuit Laboratory）.Performance enhancement of c-CESL-strained 95-nm-gate NMOSFET using trench-based structure[J].半导体学报(英文版),2015,第1期首页上一页 10 11 12 13 下一页尾页共有13页，转到页

期刊文章列表