期刊的影响因子--文章列表

期刊文章列表
樊世燕^1，2，刘玉岭¹，孙鸣¹，唐继英¹，闫辰奇¹，李海龙¹，王胜利¹（Institute of Microelectronics, Hebei University of Technology；School of Computer Science and Engineering, Hebei University of Technology）.Next generation barrier CMP slurry with novel weakly alkaline chelating agent[J].半导体学报(英文版),2015,第1期陈昌铭，李巍，李宁，任俊彦（State Key Laboratory of ASIC & System, Fudan University）.A 9–12 GHz 5-bit active LO phase shifter with a new vector sum method[J].半导体学报(英文版),2015,第1期戴伟楠，祝靖，孙伟锋，杜益成，黄克琴（National ASIC System Engineering Research Center, Southeast University）.An improved trench gate super-junction IGBT with double emitter[J].半导体学报(英文版),2015,第1期朱振^1，2，张新²，李沛旭²，王钢¹，徐现刚^2，3（School of Physics and Engineering,Sun Yat-Sen University；Shandong Huaguang Optoelectronics Co.,Ltd；State Key Laboratory of Crystal Material,Shandong University）.Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer[J].半导体学报(英文版),2015,第1期蒋锡燕，王瑾，高晨，许吉，万洪丹（College of Opto-Electronic Engineering, Nanjing University of Posts and Telecommunications）.All-optical NRZ wavelength conversion using a Sagnac loop with optimized SOA characteristics[J].半导体学报(英文版),2015,第1期李蕾蕾^1，2，周昕杰²，于宗光^1，2，封晴²（School of Microelectronics, Xidian University；The 58th Research Institute of China Electronics Technology Group Corporation）.Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation[J].半导体学报(英文版),2015,第1期任尚清，杨红，唐波，徐昊，罗维春，唐兆云，徐烨锋，许静，王大海，李俊峰，闫江，赵超，陈大鹏，叶甜春，王文武（Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences）.Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process[J].半导体学报(英文版),2015,第1期齐爱谊^1，2，王宇飞²，郭小杰^1，2，郑婉华^1，2（State key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences；Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences）.A novel lateral cavity surface emitting laser with top sub-wavelength grating[J].半导体学报(英文版),2015,第1期张跃军，蒋志迪，汪鹏君，张学龙（Institute of Circuits and Systems, Ningbo University）.High accuracy digital aging monitor based on PLL-VCO circuit[J].半导体学报(英文版),2015,第1期赵远新，高源培，李巍，李宁，任俊彦（State Key Laboratory of ASIC & System, Fudan University）.A 0.8–4.2 GHz monolithic all-digital PLL based frequency synthesizer for wireless communications[J].半导体学报(英文版),2015,第1期张锋¹，邱玉松²（Institute of Microelectronics, Chinese Academy of Sciences；College of Physics and Microelectronics Science, Hunan University）.A 3 Gb/s multichannel transceiver in 65 nm CMOS technology[J].半导体学报(英文版),2015,第1期 Ali Arif¹，Okba Belahssen²，Salim Gareh³，Said Benramache²（Electrical Engineering Department, Faculty of Technology, University of Biskra, Algeria；Laboratoire de Physique des Couches Minces et Applications (LPCMA), Université de Biskra, Algeria；Mechanical Engineering Department, Faculty of Technology, University of Biskra, Algeria）.The calculation of band gap energy in zinc oxide films[J].半导体学报(英文版),2015,第1期 Menka Anand Bulusu，S.Dasgupta（Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee (IITR), Roorkee,Uttarakhand, India）.Insights into channel potentials and electron quasi-Fermi potentials for DG tunnel FETs[J].半导体学报(英文版),2015,第1期任春江，沈宏昌，李忠辉，陈堂胜，张斌，高涛（National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electron Devices Institute）.GaN HEMT with AlGaN back barrier for high power MMIC switch application[J].半导体学报(英文版),2015,第1期 A.F Bouhdjar¹，L.Ayat²，AM.Meftah¹，N.Sengouga¹，AF.Meftah¹（Faculté des Sciences, Laboratoire des Matériaux Semi-conducteurs et Métalliques, Université Mohammed Khider, B.P. 145,Biskra 07000, Algérie；Laboratory of Semiconductor Devices Physics, Physics Department, University of Béchar, P.O. Box 417, Béchar 08000,Algeria）.Computer modelling and analysis of the photodegradation effect in a-Si：H p–i–n solar cell[J].半导体学报(英文版),2015,第1期 M.Hema Lata Rao，N.V.L.Narasimha Murty（School of Electrical Sciences，IIT Bhubaneswar，Bhubaneswar 751013，India）.An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects[J].半导体学报(英文版),2015,第1期 T.D.Subash¹，T.Gnanasekaran²，C.Divya³（K.N.S.K College of Engineering，Nagercoil-629901，India；Department of IT，RMK College of Engineering and Technology，629401，India；Centre for IT & Eng，Manonmaniam Sundaranar University，627012，India）.Performance analysis of InSb based QWFET for ultra high speed applications[J].半导体学报(英文版),2015,第1期张汝民^1，2，阮瑜¹，李政伊¹，程思冲¹，刘迪军³（School of Electronic and Information Engineering, Beijing University of Aeronautics & Astronautics；State Key Laboratory of Wireless Mobile Communications, China Academy of Telecommunications Technology (CATT)；Leadcore Technology Co, Ltd, Datang Telecom Technology & Industry Group）.Thermionic emission theory and diffusion theory applied to CdTe PV devices[J].半导体学报(英文版),2015,第1期 K.Bekhouche¹，N.Sengouga¹，B.K.Jones²（Laboratory of Metallic and Semiconducting Materials (LMSM), Université de Biskra, 07000 Biskra, Algeria；Department of Physics, Lancaster University, Lancaster, LA5 9LX, UK）.Numerical simulation of the effect of gold doping on the resistance to neutron irradiation of silicon diodes[J].半导体学报(英文版),2015,第1期 Bahniman Ghosh^1，2，Aayush Gupta²（Microelectronics Research Center，10100，Burnet Road，Bldg. 160，University of Texas at Austin，Austin，TX，78758，USA；Department of Electrical Engineering，Indian Institute of Technology Kanpur，Kanpur 208016，India）.Effect of defects on the electronic properties of WS₂ armchair nanoribbon[J].半导体学报(英文版),2015,第1期刘昶时（Nan Hu College, Jiaxing University）.An analytic model to describe the relationship between conductance and frequency of heterojunction[J].半导体学报(英文版),2015,第1期首页上一页 11 12 13 尾页共有13页，转到页

期刊文章列表