期刊的影响因子--文章列表

期刊文章列表
赵元富¹，岳素格^1，2，赵馨远¹，陆时进¹，边强¹，王亮¹，孙永姝¹（Beijing Microelectronics Technology Institute；Beijing University of Aeronautics & Astronautics）.Single event soft error in advanced integrated circuit[J].半导体学报(英文版),2015,第11期郝丽，于立新，彭和平，庄伟（Beijing Microelectronic Technology Institute）.Low cost design of microprocessor EDAC circuit[J].半导体学报(英文版),2015,第11期赵元富，覃辉，彭和平，于立新（Beijing Microelectronics Technology Institute）.Design of high performance and radiation hardened SPARC-V8 processor[J].半导体学报(英文版),2015,第11期韩志伟¹，王亮¹，岳素格^1，2，韩兵¹，杜守刚¹（Beijing Microelectronics Technology Institute；Beijing University of Aeronautics & Astronautics）.Analysis and RHBD technique of single event transients in PLLs[J].半导体学报(英文版),2015,第11期罗尹虹，张凤祁，郭红霞，肖尧，赵雯，丁李利，王园明（State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology）.Impacts of test factors on heavy ion single event multiple-cell upsets in nanometer-scale SRAM[J].半导体学报(英文版),2015,第11期赵元富，刘丽艳，刘晓会，晋孝峰，李想（Beijing Microelectronics Technology Institute）.Radiation effects on scientific CMOS image sensor[J].半导体学报(英文版),2015,第11期于春青¹，范隆¹，岳素格^1，2，陈茂鑫¹，杜守刚¹，郑宏超¹（Beijing Microelectronics Technology Institute；Beijing University of Aeronautics & Astronautics）.The investigation on sensitive mapping of memory cell in microprocessor[J].半导体学报(英文版),2015,第11期武唯康，安霞，谭斐，冯慧，陈叶华，刘静静，张兴，黄如（Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University）.Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices[J].半导体学报(英文版),2015,第11期洪新红¹，潘立阳¹，张文帝¹，纪冬梅²，伍冬¹，沈忱²，许军¹（Institute of Microelectronics, Tsinghua University；Cogenda Co Ltd）.Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening[J].半导体学报(英文版),2015,第11期岳素格^1，2，张晓林¹，赵馨远²（Beijing University of Aeronautics & Astronautics；Beijing Microelectronics Technology Institute）.Single event transient pulse width measurement of 65-nm bulk CMOS circuits[J].半导体学报(英文版),2015,第11期刘琳¹，岳素格^1，2，陆时进¹（Beijing Microelectronics Technology Institute；Beijing University of Aeronautics & Astronautics）.A four-interleaving HBD SRAM cell based on dual DICE for multiple node collection mitigation[J].半导体学报(英文版),2015,第11期何安林，郭刚，史淑廷，沈东军，刘建成，蔡莉，范辉（China Institute of Atomic Energy）.Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter[J].半导体学报(英文版),2015,第11期郑宏超¹，赵元富¹，岳素格^1，2，范隆¹，杜守刚¹，陈茂鑫¹，于春青¹（Beijing Microelectronics Technology Institute；Beijing University of Aeronautics & Astronautics）.The single-event effect evaluation technology for nano integrated circuits[J].半导体学报(英文版),2015,第11期赵元富¹，郑宏超¹，范隆¹，岳素格^1，2，陈茂鑫¹，杜守刚¹（Beijing Microelectronics Technology Institute；Beijing University of Aeronautics & Astronautics）.Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture[J].半导体学报(英文版),2015,第11期岳素格^1，2，张晓林¹，赵元富²，刘琳²，王汉宁²（Beijing University of Aeronautics & Astronautics；Beijing Microelectronics Technology Institute）.Modeling and simulation of single-event effect in CMOS circuit[J].半导体学报(英文版),2015,第11期武唯康，安霞，蒋晓波，陈叶华，刘静静，张兴，黄如（Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University）.Line-edge roughness induced single event transient variation in SOI Fin FETs[J].半导体学报(英文版),2015,第11期杜守刚^1，2，岳素格^2，3，刘红侠¹，范隆²，郑宏超²（School of Microelectronics, Xidian University；Beijing Microelectronics Technology Institute；Beijing University of Aeronautics & Astronautics）.Predictions for proton and heavy ions induced SEUs in 65 nm SRAMs[J].半导体学报(英文版),2015,第11期董佳琪¹，邱柯妮^1，2，张伟功^1，2，王晶^1，3，王珍珍¹，丁丽华^1，3（College of Information Engineering, Capital Normal University；Beijing Center for Mathematics and Information Interdisciplinary Sciences；Beijing Key Laboratory of Electronic System Reliability and Prognostics）.Multi-bit upset aware hybrid error-correction for cache in embedded processors[J].半导体学报(英文版),2015,第11期赵元富¹，于春青¹，范隆¹，岳素格^1，2，陈茂鑫¹，杜守刚¹，郑宏超¹（Beijing Microelectronics Technology Institute；Beijing University of Aeronautics & Astronautics）.A prediction technique for single-event effects on complex integrated circuits[J].半导体学报(英文版),2015,第11期王晶^1，2，杨星¹，赵元富³，张伟功^1，4，申娇^1，2，邱柯妮^1，2（College of Information Engineering, Capital Normal University；Beijing Engineering Research Center of High Reliable Embedded System；Beijing Microelectronics Technology Institute；Beijing Key Laboratory of Electronic System Reliability and Prognostics）.Multi-bits error detection and fast recovery in RISC cores[J].半导体学报(英文版),2015,第11期陈叶华^1，2，安霞²，武唯康²，张曜³，刘静静³，张兴²，黄如²（Peking University Shenzhen Graduate School；Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University；School of Software and Microelectronics, Peking University）.Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices[J].半导体学报(英文版),2015,第11期吕敏.序言[J].半导体学报(英文版),2015,第11期 Lu Min.Preface[J].半导体学报(英文版),2015,第11期井红旗，仲莉，倪羽茜，张俊杰，刘素平，马晓宇（National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences）.Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics[J].半导体学报(英文版),2015,第10期肖功利^1，2，覃玉良¹，徐卫林¹，韦保林¹，段吉海¹，韦雪明¹（School of Information and Communication,Guilin University of Electronic Technology；Guangxi Experiment Center of Information Science）.Demonstration of a fully differential VGA chip with small THD for ECG acquisition system[J].半导体学报(英文版),2015,第10期刘佳林^1，2，张旭¹，胡晓晖¹，郭亚涛²，李鹏¹，刘鸣¹，李斌²，陈弘达¹（State Key Laboratory on Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences；School of Electronic and Information Engineering,South China University of Technology）.A CMOS frontend chip for implantable neural recording with wide voltage supply range[J].半导体学报(英文版),2015,第10期王辉¹，钮应喜²，杨霏²，蔡勇¹，张泽洪¹，曾中明¹，王敏锐¹，曾春红¹，张宝顺¹（Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences；State Grid Corporation of China）.Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes[J].半导体学报(英文版),2015,第10期邱凯，左玉华，周天微，刘智，郑军，李传波，成步文（State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences）.Enhanced light trapping in periodically truncated cone silicon nanowire structure[J].半导体学报(英文版),2015,第10期陈景明，舒斌，吴继宝，范林西，张鹤鸣，胡辉勇，宣荣喜，宋建军（Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University）.Enhanced electroluminescence from a free-standing tensilely strained germanium nanomembrane light-emitting diode[J].半导体学报(英文版),2015,第10期党焕芹^1，2，吴晓明^1，2，孙小卫³，邹润秋^1，2，章若川^1，2，印寿根^1，2（Institute of Material Physics,Tianjin University of Technology；Key Laboratory of Display Material and Photoelectric Devices,Ministry of Education of China,Tianjin University of Technology；School of Electrical & Electronic Engineering,Nanyang Technological University）.An improved performance of copper phthalocyanine OFETs with channel and source/drain contact modifications[J].半导体学报(英文版),2015,第10期首页上一页 1 2 3 4 5 下一页尾页共有13页，转到页

期刊文章列表