期刊的影响因子--文章列表

期刊文章列表
Yiling Nie，Pengshan Xie，Xu Chen，Chenxing Jin，Wanrong Liu，Xiaofang Shi，Yunchao Xu，Yongyi Peng，Johnny C.Ho，Jia Sun，Junliang Yang（Hunan Key Laboratory for Super Microstructure and Ultrafast Process，School of Physics and Electronics，Central South University，Changsha 410083，China；Department of Materials Science and Engineering，City University of Hong Kong，Kowloon 999077，Hong Kong SAR，China；Department of Materials Science and Engineering，City University of Hong Kong，Kowloon 999077，Hong Kong SAR，China；State Key Laboratory of Terahertz and Millimeter Waves，City University of Hong Kong，Kowloon 999077，Hong Kong SAR，China；Key Laboratory of Advanced Materials Processing & Mold(Zhengzhou University)，Ministry of Education，Zhengzhou 450002，China）.Hybrid C8-BTBT/lnGaAs nanowire heterojunction for artificial photosynaptic transistors[J].半导体学报(英文版),2022,第11期 Lulu Guan，Xingyu Li，Dongchen Che，Kaidong Xu，Shiwei Zhuang（School of Physics and Electronic Engineering，Jiangsu Normal University，Xuzhou 221116，China；Jiangsu Leuven Instruments Co.Ltd，Xuzhou 221300，China；School of Physics and Electronic Engineering，Jiangsu Normal University，Xuzhou 221116，China；Jiangsu Leuven Instruments Co.Ltd，Xuzhou 221300，China）.Plasma atomic layer etching of GaN/AIGaN materials and application：An overview[J].半导体学报(英文版),2022,第11期 Hongchao Zhang¹，Xiangyue Ma¹，Chuanpeng Jiang¹，Jialiang Yin¹，Shuqin Lyu²，Shiyang Lu²，Xiantao Shang²，Bowen Man²，Cong Zhang²，Dandan Li²，Shuhui Li²，Wenjing Chen³，Hongxi Liu²，Gefei Wang²，Kaihua Cao^1，3，Zhaohao Wang¹，Weisheng Zhao^1，3（Fert Beijing Institute,School of Integrated Science and Engineering；Truth Memory Tech.Corporation；Beihang-Goertek Joint Microelectronics Institute,Qingdao Research Institute,Beihang University）.Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform[J].Journal of Semiconductors,2022,第10期 Faraz Kaiser Malik，Kristel Fobelets（Department of Electrical and Electronic Engineering,Imperial College London）.Areview of thermal rectification in solid-state devices[J].Journal of Semiconductors,2022,第10期 Erming Feng¹，Yunfei Han²，Jianhui Chang¹，Hengyue Li¹，Keqing Huang^1，3，Lixiu Zhang⁴，Qun Luo²，Jidong Zhang⁵，Changqi Ma²，Yingping Zou⁶，Liming Ding⁴，Junliang Yang¹（Hunan Key Laboratory for Super-microstructure and Ultrafast Process,School of Physics and Electronics,Central South University；Printable Electronics Research Center,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences；College of Engineering and Computer Science,Australian National University；Center for Excellence in Nanoscience,Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS),National Center for Nanoscience and Technology；Changchun Institute of Applied Chemistry,Chinese Academy of Sciences；College of Chemistry and Chemical Engineering,Central South University）.26.75 cm² organic solar modules demonstrate a certified efficiency of 14.34%[J].Journal of Semiconductors,2022,第10期 Yan Wang¹，Tongtong Liu¹，Jiangyi Liu¹，Chuanbo Li¹，Zhuo Chen²，Shuhui Bo¹（Optoelectronics Research Centre,School of Science,Minzu University of China；Key Laboratory of Bio-inspired Materials and Interfacial Science,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences）.Organic electro-optic polymer materials and organic-based hybrid electro-optic modulators[J].Journal of Semiconductors,2022,第10期 Yumeng Zhang^1，2，Zhejia Wang^3，4，Jiaheng Feng^3，4，Shuaiqiang Ming^1，3，Furong Qu^1，2，Yang Xia^1，2，Meng He¹，Zhimin Hu^1，2，Jing Wang⁵（Institute of Microelectronics of the Chinese Academy of Sciences；University of Chinese Academy of Sciences；Jiaxing Microelectronics Instrument and Equipment Engineering Center of the Chinese Academy of Sciences；Jiaxing Kemin Electronic Equipment Technology Co.,Ltd.；Institute of Physics of the Chinese Academy of Sciences）.Synthesis and electromagnetic transport of large-area 2D WTe₂ thin film[J].Journal of Semiconductors,2022,第10期 Shiqing Zhang¹，Bing Song¹，Shujing Jia²，Rongrong Cao¹，Sen Liu¹，Hui Xu¹，Qingjiang Li¹（College of Electronic Science and Technology,National University of Defense Technology；Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences）.Multilayer doped-GeSe OTS selector for improved endurance and threshold voltage stability[J].Journal of Semiconductors,2022,第10期 Wenhao Geng^1，2，Guang Yang³，Xuqing Zhang^1，2，Xi Zhang²，Yazhe Wang²，Lihui Song²，Penglei Chen²，Yiqiang Zhang⁴，Xiaodong Pi^1，2，Deren Yang^1，2，Rong Wang^1，2（State Key Laboratory of Silicon Materials &School of Materials Science and Engineering,Zhejiang University；Institute of Advanced Semiconductors &Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,Hangzhou Innovation Center,Zhejiang University；Key Laboratory of Optical Field Manipulation of Zhejiang Province,Department of Physics,Zhejiang Sci-Tech University；School of Materials Science and Engineering &College of Chemistry,Zhengzhou University）.Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching[J].Journal of Semiconductors,2022,第10期 Tingting He^1，2，Xiaohong Yang^1，2，Yongsheng Tang^1，2，Rui Wang^1，2，Yijun Liu^1，2（State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences；College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences）.High photon detection efficiency InGaAs/InP single photon avalanche diode at 250 K[J].Journal of Semiconductors,2022,第10期 Baoze Liu¹，Lixiu Zhang²，Yan Jiang¹，Liming Ding²（Songshan Lake Materials Laboratory；Center for Excellence in Nanoscience (CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS),National Center for Nanoscience and Technology）.Failure pathways of perovskite solar cells in space[J].Journal of Semiconductors,2022,第10期 Liang Chu¹，Lixiu Zhang²，Liming Ding²（School of Electronics and Information,Hangzhou Dianzi University；Center for Excellence in Nanoscience (CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS),National Center for Nanoscience and Technology）.Superfluorescence from halide perovskite nanocrystal superlattices[J].Journal of Semiconductors,2022,第10期 Xingang Wang¹，Tao Xiong²，Kaiyao Xin^2，3，Juehan Yang²，Yueyang Liu²，Zeping Zhao¹，Jianguo Liu¹，Zhongming Wei^2，3（The State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences；State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences；Sino-Danish Center for Education and Research,Sino-Danish College University of Chinese Academy of Sciences）.Polarization sensitive photodetector based on quasi-1D ZrSe₃[J].Journal of Semiconductors,2022,第10期 Lijuan Wu（Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering,School of Physics &Electronic Science,Changsha University of Science &Technology）.A deep trench super-junction LDMOS with double charge compensation layer[J].Journal of Semiconductors,2022,第10期（State Key Laboratory of Integrated Optoelectronics，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China；College of Materials Science and Opto-Electronic Technology，University of Chinese Academy of Sciences，Beijing 100049，China）.High photon detection efficiency InGaAs/lnP single photon avalanche diode at 250 K[J].半导体学报（英文版）,2022,第10期 Yuhao Xia^1，2，Shanglin Yang^1，2，Jiaqi Niu^1，2，Xin Fu^1，2，Lin Yang^1，2（InstituteofSemiconductors Chinese Academy of Sciences Beijing 100083；China；CollegeofMaterialsScienceandOpto-ElectronicTechnology University of Chinese Academy of Sciences Beijing 101408 China）.Strict non-blocking four-port optical router for mesh photonic network-on-chip[J].Journal of Semiconductors,2022,第9期 Hemraj Dahiya¹，Anupam Agrawal²，Ganesh D.Sharma¹，Abhishek Kumar Singh³（TheLNMInstituteofInformationTechnology, Department of Physics, Jaipur；India；BhilaiInstituteofTechnology, Durg；RajivGandhiInstituteofPetroleumTechnology, Department of Electronics Engineering , Amethi）.Organic bulk heterojunction enabled with nanocapsules of hydrate vanadium pentaoxide layer for high responsivity self-powered photodetector[J].Journal of Semiconductors,2022,第9期 Lishu Wu^1，2，Jiayun Dai²，Yuechan Kong²，Tangsheng Chen²，Tong Zhang^1，3（JointInternationalResearchLaboratoryofInformationDisplayandVisualization School of Electronic Science and EngineeringSoutheast University Nanjing 210096；China；ScienceandTechnologyonMonolithicIntegratedCircuitsandModulesLaboratory Nanjing Electronic Devices InstituteNanjing 210016；KeyLaboratoryofMicro-InertialInstrumentandAdvancedNavigationTechnology Ministry of Education School of Instrument Science and Engineering Southeast University Nanjing 210096 China）.RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions[J].Journal of Semiconductors,2022,第9期 Xiaofei Liao^1，2，Dixian Zhao^1，2，Xiaohu You^1，2（NationalMobileCommunicationResearchLaboratory Southeast University Nanjing 211189；China；PurpleMountainLaboratories Nanjing 211111 China）.An E-band CMOS frequency quadrupler with 1.7-dBm output power and 45-dB fundamental suppression[J].Journal of Semiconductors,2022,第9期 Minglong Zhang^1，2，Masao Ikeda^1，2，Siyi Huang^1，2，Jianping Liu^1，2，Jianjun Zhu²，Shuming Zhang^1，2，Hui Yang^1，2（SchoolofNano-TechandNano-Bionics University of Science and Technology of China Hefei 230026；SuzhouInstituteofNano-TechandNano-Bionics Chinese Academy of Sciences Suzhou 215123 China）.Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p⁺-GaN contacting layers[J].Journal of Semiconductors,2022,第9期 Zhouyu Tong¹，Mingxuan Bu¹，Yiqiang Zhang²，Deren Yang^1，3，Xiaodong Pi^1，3（StateKeyLaboratoryofSiliconMaterials&SchoolofMaterialsScienceandEngineering Zhejiang University Hangzhou 310027；China；SchoolofMaterialsScienceandEngineering&CollegeofChemistry Zhengzhou University Zhengzhou 450001；InstituteofAdvancedSemiconductors&ZhejiangProvincialKeyLaboratoryofPowerSemiconductorMaterialsandDevicesHangzhou Innovation Center Zhejiang University Hangzhou 311215 China）.Hyperdoped silicon: Processing, properties, and devices[J].Journal of Semiconductors,2022,第9期 Xinyi Mei¹，Lixiu Zhang²，Xiaoliang Zhang¹，Liming Ding²（SchoolofMaterialsScienceandEngineering, Beihang University；China；CenterforExcellenceinNanoscience(CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology）.Perovskite nanocrystals for light-emitting diodes[J].Journal of Semiconductors,2022,第9期 Yabao Zhang^1，2，Jun Zheng^1，2，Peipei Ma^1，2，Xueyi Zheng^1，3，Zhi Liu^1，2，Yuhua Zuo^1，2，Chuanbo Li³，Buwen Cheng^1，2（StateKeyLaboratoryonIntegratedOptoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083；China；CenterofMaterialsScienceandOptoelectronicsEngineering University of Chinese Academy of Sciences Beijing 100049；SchoolofScience Minzu University of China Beijing 100081 China）.Growth and characterization of β-Ga₂O₃ thin films grown on off-angled Al₂O₃ substrates by metal-organic chemical vapor deposition[J].Journal of Semiconductors,2022,第9期 chen gao， hui wang， pang wang， jinlong cai， yuandong sun， cong yu， teng li， xiaoshuai zhang，dan liu， and tao wang（School of Materials Science and Engineering, Wuhan University of Technology）.Defect passivation with potassium trifluoroborate for efficient spray-coated perovskite solar cells in air[J].Journal of Semiconductors,2022,第9期 Yunye Wang¹，Zuo Xiao²，Shanxin Xiong¹，Liming Ding²（CollegeofChemistryandChemicalEngineering, Xi’an University of Science and Technology；China；CenterforExcellenceinNanoscience(CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology）.C OF-based electrochromic materials and devices[J].Journal of Semiconductors,2022,第9期 Jingzhi Fang^{1，2，3，4}，Huading Song³，Bo Li⁵，Ziqi Zhou^1，2，3，Juehan Yang^1，2，Benchuan Lin⁴，Zhimin Liao³，Zhongming Wei^1，2（StateKeyLaboratoryofSuperlatticesandMicrostructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083；China；CenterofMaterialsScienceandOptoelectronicsEngineering University of Chinese Academy of Sciences Beijing 100049；StateKeyLaboratoryforMesoscopicPhysicsandFrontiersScienceCenterforNano-optoelectronics School of Physics Peking UniversityBeijing 100871；ShenzhenInstituteforQuantumScienceandEngineering Southern University of Science and Technology Shenzhen 518055；HunanKeyLaboratoryofTwo-DimensionalMaterials Department of Applied Physics School of Physics and Electronics Hunan UniversityChangsha 410082 China）.L arge unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS₂ homojunction[J].Journal of Semiconductors,2022,第9期 Qian Jiang^1，2，Junhua Meng³，Yiming Shi^1，3，Zhigang Yin^1，4，Jingren Chen^1，4，Jing Zhang²，Jinliang Wu¹，Xingwang Zhang^1，4（KeyLabofSemiconductorMaterialsScience Institute of Semiconductors Chinese Academy of Sciences Beijing 100083；China；SchoolofInformationScienceandTechnology North China University of Technology Beijing 100144；FacultyofScience Beijing University of Technology Beijing 100124；CenterofMaterialsScienceandOptoelectronicsEngineering University of Chinese Academy of Sciences Beijing 100049 China）.Electrical and optical properties of hydrogen plasma treated β-Ga₂O₃ thin films[J].Journal of Semiconductors,2022,第9期首页上一页 1 2 3 4 5 下一页尾页共有7页，转到页

期刊文章列表