期刊的影响因子--文章列表

期刊文章列表
Hao Jin^1，2，Sen Huang^1，2，Qimeng Jiang¹，Yingjie Wang^1，2，Jie Fan¹，Haibo Yin^1，2，Xinhua Wang^1，2，Ke Wei^1，2，Jianxun Liu³，Yaozong Zhong³，Qian Sun³，Xinyu Liu^1，2（Institute of Microelectronics, Chinese Academy of Sciences；University of Chinese Academy of Sciences；Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences）.High-performance enhancement-mode GaN-based p-FETs fabricated with O₃-Al₂O₃/HfO₂-stacked gate dielectric[J].Journal of Semiconductors,2023,第10期 Tianjiang He^1，2，Suping Liu¹，Wei Li^1，2，Li Zhong^1，2，Xiaoyu Ma^1，2，Cong Xiong¹，Nan Lin^1，2，Zhennuo Wang^1，2（National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences；College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences）.Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser[J].Journal of Semiconductors,2023,第10期 Chenxu Wu¹，Yibai Xue¹，Han Bao¹，Ling Yang¹，Jiancong Li¹，Jing Tian¹，Shengguang Ren¹，Yi Li^1，2，Xiangshui Miao^1，2（School of Integrated Circuits, Huazhong University of Science and Technology；Hubei Yangtze Memory Laboratories）.F orward stagewise regression with multilevel memristor for sparse coding[J].Journal of Semiconductors,2023,第10期 Mengjia Li¹，Zuolin Zhang¹，Jie Sun²，Fan Liu³，Jiangzhao Chen⁴，Liming Ding²，Cong Chen^1，5（State Key Laboratory of Reliability and Intelligence of Electrical Equipment, School of Materials Science and Engineering, Hebei University of Technology；Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology；Key Laboratory of Optoelectronic Technology & Systems (MoE), College of Optoelectronic Engineering, Chongqing University；Department of Chemical Engineering, Kansas State University, Manhattan；Macao Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology）.Perovskite solar cells with NiO_x hole-transport layer[J].Journal of Semiconductors,2023,第10期 Nong Li^1，2，Dongwei Jiang^1，2，3，Guowei Wang^1，2，3，Weiqiang Chen^1，2，Wenguang Zhou^1，2，Junkai Jiang^1，2，Faran Chang¹，Hongyue Hao^1，2，3，Donghai Wu^1，2，3，Yingqiang Xu^1，2，3，Guiying Shen⁴，Hui Xie⁴，Jingming Liu⁴，Youwen Zhao⁴，Fenghua Wang⁴，Zhichuan Niu^1，2，3（State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences；Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences；Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences）.T he measurement of responsivity of infrared photodetectors using a cavity blackbody[J].Journal of Semiconductors,2023,第10期 Zejie Yu^1，2，3，He Gao¹，Yi Wang⁴，Yue Yu⁴，Hon Ki Tsang⁴，Xiankai Sun⁴，Daoxin Dai^{1，2，3，5}（Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, International Research Center for Advanced Photonics, College of Optical Science and Engineering, Zhejiang University；Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories；Jiaxing Key Laboratory of Photonic Sensing & Intelligent Imaging；Intelligent Optics & Photonics Research Center, Jiaxing Research Institute Zhejiang University；Ningbo Research Institute, Zhejiang University）.F undamentals and applications of photonic waveguides with bound states in the continuum[J].Journal of Semiconductors,2023,第10期 Talia Tene¹，Marco Guevara²，Gabriela Tubon-Usca³，Oswaldo Villacrés Cáceres⁴，Gabriel Moreano⁵，Cristian Vacacela Gomez⁶，Stefano Bellucci⁶（Department of Chemistry, Universidad Técnica Particular de Loja；UNICARIBE Research Center, University of Calabria, I-87036 Rende；Grupo de Investigación en Materiales Avanzados (GIMA), Facultad de Ciencias, Escuela Superior Politécnica de Chimborazo (ESPOCH)；Facultad de Ciencias, Escuela Superior Politécnica de Chimborazo (ESPOCH)；Faculty of Mechanical Engineering, Escuela Superior Politécnica de Chimborazo (ESPOCH)；INFN-Laboratori Nazionali di Frascati, Via E.Fermi 54）.T Hz plasmonics and electronics in germanene nanostrips[J].Journal of Semiconductors,2023,第10期 Min Liu^1，2，Ziteng Cai^1，3，Jian Liu^1，2，Nanjian Wu^1，2，Liyuan Liu^1，2（State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences；Faculty of Information Technology, Beijing University of Technology）.Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process[J].Journal of Semiconductors,2023,第10期 Chunbao Feng^1，2，Changhe Wu¹，Xin Luo¹，Tao Hu¹，Fanchuan Chen¹，Shichang Li^1，2，Shengnan Duan^1，2，Wenjie Hou³，Dengfeng Li^1，2，Gang Tang⁴，Gang Zhang⁵（School of Science, Chongqing University of Posts and Telecommunications；Institute for Advanced Sciences, Chongqing University of Posts and Telecommunications；School of Computer Science and Technology, Northwestern Polytechnical University；Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology；Institute of High Performance Computing）.Pressure-dependent electronic, optical, and mechanical properties of antiperovskite X₃NP (X = Ca, Mg): A first-principles study[J].Journal of Semiconductors,2023,第10期 Lu Tang，Yi Chen，Kui Wang（Engineering Research Centre of RF-ICs & RF-systems, Ministry of Education, Southeast University）.An 80-GHz DCO utilizing improved SC ladder and promoted DCTL-based hybrid tuning banks[J].Journal of Semiconductors,2023,第10期 Qilin Hua，Guozhen Shen（School of Integrated Circuits and Electronics, Beijing Institute of Technology）.A wearable sweat patch for non-invasive and wireless monitoring inflammatory status[J].Journal of Semiconductors,2023,第10期 Swagata Samanta（Department of Electronics and Communication Engineering, SRM University-AP）.GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications[J].Journal of Semiconductors,2023,第10期 Feilian Chen¹，Meng Zhang¹，Yunhao Wan²，Xindi Xu²，Man Wong³，Hoi-Sing Kwok³（College of Electronic and Information Engineering,Shenzhen University；Institute of Microscale Optoelectronics (IMO),Shenzhen University；State Key Laboratory of Advanced Displays and Optoelectronics Technologies,The Hong Kong University of Science and Technology,Clear Water Bay）.Advances in mobility enhancement of ITZO thin-film transistors:a review[J].Journal of Semiconductors,2023,第9期 Wanlong Zhang¹，Julian Schneider²，Maksym F.Prodanov³，Valerii V.Vashchenko³，Andrey L.Rogach²，Xiaocong Yuan¹，Abhishek K.Srivastava³（Nanophotonics Research Center,Institute of Microscale Optoelectronics,Shenzhen University；State Key Laboratory of Advanced Displays and Optoelectronics Technologies,Department of Electronic &Computer Engineering,Hong Kong University of Science and Technology；Department of Materials Science and Engineering and Centre for Functional Photonics (CFP),City University of Hong Kong）.Photo-induced flexible semiconductor CdSe/CdS quantum rods alignment[J].Journal of Semiconductors,2023,第9期 Depeng Li^1，2，Jingrui Ma^1，2，Wenbo Liu^1，2，Guohong Xiang^1，2，Xiangwei Qu^1，2，Siqi Jia³，Mi Gu^1，2，Jiahao Wei^1，2，Pai Liu^1，2，Kai Wang^1，2，Xiaowei Sun^1，2（Institute of Nanoscience and Applications,and Department of Electrical and Electronic Engineering,Southern University of Science and Technology；Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology),Ministry of Education,Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting,and Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting,Southern University of Science and Technology；Institute of Advanced Displays and Imaging,Henan Academy of Sciences）.Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer vialigand treatment[J].Journal of Semiconductors,2023,第9期 Yanxin Wang¹，Jiye Li¹，Fayang Liu¹，Dongxiang Luo²，Yunping Wang¹，Shengdong Zhang^1，3，Lei Lu¹（School of Electronic and Computer Engineering,Peking University Shenzhen Graduate School；Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials,School of Chemistry and Chemical Engineering,Guangzhou University；Institute of Microelectronics,Peking University）.Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors[J].Journal of Semiconductors,2023,第9期 Xiangwei Qu^1，2，Xiaowei Sun^1，2（Institute of Nanoscience and Applications,and Department of Electrical and Electronic Engineering,Southern University of Science and Technology；Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology),Ministry of Education,and Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting,Southern University of Science and Technology）.Impedance spectroscopy for quantum dot light-emitting diodes[J].Journal of Semiconductors,2023,第9期 Zhenghao Long¹，Yucheng Ding¹，Xiao Qiu¹，Yu Zhou¹，Shivam Kumar¹，Zhiyong Fan^{1，2，3，4}（Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology,Clear Water Bay；State Key Laboratory of Advanced Displays and Optoelectronics Technologies,HKUST,Clear Water Bay；Department of Chemical and Biological Engineering,The Hong Kong University of Science and Technology,Clear Water Bay；Shanghai Artificial Intelligence Laboratory）.A dual-mode image sensor using an all-inorganic perovskite nanowire array for standard and neuromorphic imaging[J].Journal of Semiconductors,2023,第9期 Bryan Siu Ting Tam¹，Shou-Cheng Dong^1，2，Ching W.Tang^1，2（State Key Laboratory of Advanced Displays and Optoelectronics Technologies,Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology,Clear Water Bay；Institute for Advanced Study,The Hong Kong University of Science and Technology,Clear Water Bay）.Low-temperature conformal vacuum deposition of OLED devices using close-space sublimation[J].Journal of Semiconductors,2023,第9期 Runxiao Shi，Tengteng Lei，Zhihe Xia，Man Wong（State Key Laboratory of Advanced Displays and Optoelectronics and Technologies,Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology）.Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems[J].Journal of Semiconductors,2023,第9期 Man Hoi Wong（Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology,Clear Water Bay）.Alandscape of β-Ga₂O₃ Schottky power diodes[J].Journal of Semiconductors,2023,第9期 Hoi-Sing Kwok^1，2，Zhiyong Fan^1，2（Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology,Clear Water Bay；State Key Laboratory of Advanced Displays and Optoelectronics Technologies,HKUST,Clear Water Bay）.Preface to Special Issue on Advanced Optoelectronic and Electronic Devices toward Future Displays-Celebration of the 10th anniversary of the State Key Laboratory of Advanced Displays and Optoelectronics Technologies at HKUST[J].Journal of Semiconductors,2023,第9期 Memoona Qammar，Bosen Zou，Jonathan E.Halpert（Department of Chemistry,Hong Kong University of Science and Technology (HKUST),Clear Water Bay Road）.Organic-inorganic halide perovskites for memristors[J].Journal of Semiconductors,2023,第9期 Wong Man Hoi.A landscape of beta-Ga_2O_3 Schottky power diodes[J].半导体学报,2023,第9期 Yongxu Yan^1，2，Zhexin Li^1，2，Zheng Lou^1，2（State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences；Center of Materials Science and Optoelectronic Engineering,University of Chinese Academy of Sciences）.Photodetector based on Ruddlesden-Popper perovskite microwires with broader band detection[J].Journal of Semiconductors,2023,第8期 Liyang Zhu¹，Kuangli Chen¹，Ying Ma²，Yong Cai²，Chunhua Zhou¹，Zhaoji Li¹，Bo Zhang¹，Qi Zhou^1，3（State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China；Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics；Institute of Electronic and Information Engineering,University of Electronic Science and Technology of China）.High threshold voltage enhancement-mode GaN p-FET with Sirich LPCVD SiN_x gate insulator for high hole mobility[J].Journal of Semiconductors,2023,第8期 Zhimin Fang¹，Jie Sun²，Shengzhong (Frank) Liu¹，Liming Ding²（Key Laboratory of Applied Surface and Colloid Chemistry (MoE),School of Materials Science and Engineering,Shaanxi Normal University；Center for Excellence in Nanoscience (CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS),National Center for Nanoscience and Technology）.Defects in perovskite crystals[J].Journal of Semiconductors,2023,第8期首页上一页 1 2 3 4 5 下一页尾页共有7页，转到页

期刊文章列表