期刊的影响因子--文章列表

期刊文章列表
郑中信^1，2，孙建东¹，周宇¹，张志鹏¹，秦华¹（Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences；University of Chinese Academy of Sciences）.Broadband terahertz radiation from a biased two-dimensional electron gas in an AlGaN/GaN heterostructure[J].半导体学报(英文版),2015,第10期仪明东¹，张宁¹，解令海¹，黄维^1，2（Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials(IAM),Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM),Nanjing University of Posts & Telecommunications；Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM),Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM),Nanjing Tech University(Nanjing Tech)）.Ambipolar organic heterojunction transistors based on F₁₆CuPc/CuPc with a MoO₃ buffer layer[J].半导体学报(英文版),2015,第10期崔磊¹，殷海波¹，姜丽娟¹，王权^1，2，冯春¹，肖红领¹，王翠梅¹，巩稼民²，张波²，李百泉³，王晓亮^1，4，王占国⁴（Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences；School of Electronic Engineering,Xi’an University of Posts & Telecommunications；Beijing Huajin Chuangwei Technology Co.,Ltd.；Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices）.The influence of Fe doping on the surface topography of GaN epitaxial material[J].半导体学报(英文版),2015,第10期 K.Benyahia¹，A.Benhaya²，M.S.Aida³（Electrical Engineering Department，University of Hadj Lakhdar Batna；Head of Clean Room，LEA Laboratory，University of Hadj Lakhdar Batna；Physics Department，University of Constantine 1，Algeria）.ZnS thin films deposition by thermal evaporation for photovoltaic applications[J].半导体学报(英文版),2015,第10期马新军，肖伯宇，孙勇，肖景林（Institute of Condensed Matter Physics,Inner Mongolia University for the Nationalities）.Effects of magnetic field on the polaron in an asymmetrical Gaussian confinement potential quantum well[J].半导体学报(英文版),2015,第10期祝卓茂¹，卞宝安¹，史海峰^1，2（School of Science,Jiangnan University；Department of Physics,Nanjing University）.Effect of N and Fe codoping on the electronic structure and optical properties of TiO₂ from first-principles study[J].半导体学报(英文版),2015,第10期杨忠华^1，2，刘贵立¹，曲迎东²，李荣德²（School of Architecture Engineering,Shenyang University of Technology；School of Material Engineering,Shenyang University of Technology）.First-principle study on energy gap of CNT superlattice structure[J].半导体学报(英文版),2015,第10期张志珂，刘宇，刘建国，祝宁华（State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences）.Packaging investigation of optoelectronic devices[J].半导体学报(英文版),2015,第10期洪姣^1，2，刘玉岭^1，2，张保国^1，2，牛新环^1，2，韩力英¹（School of Electronic Information Engineering,Hebei University of Technology；Tianjin Key Laboratory of Electronic Materials and Devices）.A novel kind of TSV slurry with guanidine hydrochloride[J].半导体学报(英文版),2015,第10期邓海文，檀柏梅，高宝红，王辰伟，顾张冰，张燕（Institute of Microelectronics,Hebei University of Technology）.A novel cleaner for colloidal silica abrasive removal in post-Cu CMP cleaning[J].半导体学报(英文版),2015,第10期顾张冰，刘玉岭，高宝红，王辰伟，邓海文（Institute of Microelectronics,Hebei University of Technology）.A novel compound cleaning solution for benzotriazole removal after copper CMP[J].半导体学报(英文版),2015,第10期王冲，李智群，李芹，刘扬，王志功（Institute of RF-& OE-ICs,Southeast University）.A broadband 47–67 GHz LNA with 17.3 dB gain in 65-nm CMOS[J].半导体学报(英文版),2015,第10期王艳朝，柯可人，秦文辉，秦亚杰，易婷，洪志良（State Key Laboratory of ASIC & Systems,Fudan University）.A low power low noise analog front end for portable healthcare system[J].半导体学报(英文版),2015,第10期顾蔚如¹，吴奕旻¹，叶凡¹，任俊彦^1，2（State Key Laboratory of ASIC & System；Microelectronics Science and Technology Innovation Platform,Fudan University）.A single-ended 10-bit 200 kS/s 607 μ W SAR ADC with an auto-zeroing offset cancellation technique[J].半导体学报(英文版),2015,第10期张旭光¹，金婕²（Guangzhou Junheng Microelectronics Tech Ltd；Shanghai University of Engineering Science）.Multi-mode multi-band power amplifier module with high low-power efficiency[J].半导体学报(英文版),2015,第10期杨卫东¹，臧剑栋²，李铁虎²，罗璞²，蒲杰¹，张瑞涛¹，陈超¹（Science and Technology on Analog Integrated Circuit Laboratory；China Electronics Technology Group Corporation No.24 Research Institute）.A 16 b 2 GHz digital-to-analog converter in 0.18 μm CMOS with digital calibration technology[J].半导体学报(英文版),2015,第10期焦文龙^1，2，苑伟政^1，2，常洪龙^1，2（School of Mechanical Engineering,Northwestern Polytechnical University；Key Laboratory of Micro/Nano Systems for Aerospace,Ministry of Education）.System level simulation of a micro resonant accelerometer with geometric nonlinear beams[J].半导体学报(英文版),2015,第10期陈杰，曾维友（School of Science,Hubei University of Automotive Technology）.Coupling effect of quantum wells on band structure[J].半导体学报(英文版),2015,第10期 M.Tiotsop¹，A.J.Fotue¹，S.C.Kenfack¹，N.Issofa¹，A.V.Wirngo¹，M.P.Tabue Djemmo^1，2，H.Fotsin³，L.C.Fai¹（Mesoscopic and Multilayers Structures Laboratory,Department of Physics,Faculty of Science,University of Dschang；Laboratory of Mechanics and Modeling of Physical Systems,Faculty of Science,University of Dschang；Laboratory of Electronics and Signal Processing,Department of Physics,Faculty of Science,University of Dschang）.Electro-magnetic weak coupling optical polaron and temperature effect in quantum dot[J].半导体学报(英文版),2015,第10期罗彦彬¹，马成炎¹，甘业兵^1，2，钱敏^1，2，叶甜春¹（Institute of Microelectronics,Chinese Academy of Sciences；Hangzhou Zhongke Microelectronics Co.Ltd.）.An inductorless multi-mode RF front end for GNSS receiver in 55 nm CMOS[J].半导体学报(英文版),2015,第10期贾海珑，陈先敏，刘琦，冯光涛（Design Service Center,Semiconductor Manufacturing International(Shanghai) Corp.）.A self-biased PLL with low power and compact area[J].半导体学报(英文版),2015,第10期路崇^1，2，谭洪舟^1，2，段志奎²，丁一²（SYSU-CMU Shunde International Joint Research Institute；School of Information Science and Technology,Sun Yat-Sen University）.A high-precision synchronization circuit for clock distribution[J].半导体学报(英文版),2015,第10期柯青，谭少阳，刘松涛，陆丹，张瑞康，王圩，吉晨（Key Laboratory of Semiconductors Materials,Institute of Semiconductors,Chinese Academy of Sciences）.Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser[J].半导体学报(英文版),2015,第9期刘传威，翟慎强，张锦川，周予虹，贾志伟，刘峰奇，王占国（Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences）.Free-space communication based on quantum cascade laser[J].半导体学报(英文版),2015,第9期黄润华¹，陶永洪²，柏松¹，陈刚¹，汪玲，刘奥²，卫能²，李赟¹，赵志飞¹（Science and Technology on Monolithic Integrated Circuits and Modules Laboratory；Nanjing Electronic Devices Institute）.Design and fabrication of a 3.3 kV 4H-SiC MOSFET[J].半导体学报(英文版),2015,第9期 A.J.Fotue¹，S.C.Kenfack¹，N.Issofa¹，M.Tiotsop¹，H.Fotsin²，E.Mainimo¹，L.C.Fai¹（Mesoscopic and Multilayers Structures Laboratory,Department of Physics,Faculty of Science,University of Dschang；Laboratory of Electronics and Signal Processing,Department of Physics,Faculty of Science,University of Dschang）.Energy levels of magneto-optical polaron in spherical quantum dot—Part 1：Strong coupling[J].半导体学报(英文版),2015,第9期杨睿，介万奇，孙晓燕，杨敏（State Key Laboratory of Solidification Processing,School of Materials Science and Engineering,Northwestern Polytechnical University）.Effect of Cr/In-doping on the crystalline quality of bulk ZnTe crystals grown from Te solution by temperature gradient solution growth(TGSG) method[J].半导体学报(英文版),2015,第9期赵银女¹，闫金良²（Dean’s Office,Ludong University；School of Physics and Optoelectronic Engineering,Ludong University）.Effects of N concentration on electronic and optical properties of N-doped PbTiO₃[J].半导体学报(英文版),2015,第9期毛清华，刘军林，吴小明，张建立，熊传兵，莫春兰，张萌，江风益（National Engineering Technology Research Center for LED on Si Substrate,Nanchang University）.Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon[J].半导体学报(英文版),2015,第9期樊世燕^1，2，刘恩海²，张军²，刘玉岭¹，王磊³，林凯²，孙鸣¹，石陆魁²（Institute of Microelectronics,Hebei University of Technology；School of Computer Science and Engineering,Hebei University of Technology；National Ocean Technology Center）.A quantitative investigation of the influence with the components of the CMP alkali slurry on the polishing rate[J].半导体学报(英文版),2015,第9期首页上一页 1 2 3 4 5 下一页尾页共有13页，转到页

期刊文章列表