期刊的影响因子--文章列表

期刊文章列表
Yuheng Zeng^1，2，3，Zetao Ding^1，2，3，Zunke Liu^1，2，3，Wei Liu^1，3，Mingdun Liao^1，3，Xi Yang^1，2，3，Zhiqin Ying^1，3，Jingsong Sun^1，3，Jiang Sheng^1，2，3，Baojie Yan^1，2，3，Haiyan He⁴，Chunhui Shou⁴，Zhenhai Yang^1，3，Jichun Ye^1，2，3（Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences；University of Chinese Academy of Sciences；Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices,Ningbo Institute of Materials Technology &Engineering；Zhejiang Energy Group R &D）.Efficiency-loss analysis of monolithic perovskite/silicon tandem solar cells by identifying the patterns of a dual two-diode model’s current-voltage curves[J].Journal of Semiconductors,2023,第8期 Xiaodong Li¹，Jie Sun²，Bozhang Li³，Junfeng Fang¹，Liming Ding²（School of Physics and Electronic Science,Engineering Research Center of Nanophotonics &Advanced Instrument (MoE),East China Normal University；Center for Excellence in Nanoscience (CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS),National Center for Nanoscience and Technology；East Chapel Hill High School,Chapel Hill）.Managing excess PbI₂ for efficient perovskite solar cells[J].Journal of Semiconductors,2023,第8期 Ao Song，Qiri Huang，Chunyang Zhang，Haoran Tang，Kai Zhang，Chunchen Liu，Fei Huang，Yong Cao（Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices,South China University of Technology (SCUT)）.Highly efficient organic solar cells with improved stability enabled by ternary copolymers with antioxidant side chains[J].Journal of Semiconductors,2023,第8期 Liyang Zhu¹，Kuangli Chen¹，Ying Ma²，Yong Cai²，Chunhua Zhou¹，Zhaoji Li¹，Bo Zhang¹，Qi Zhou^1，3（State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China；Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics；Institute of Electronic and Information Engineering,University of Electronic Science and Technology of China）.High threshold voltage enhancement-mode GaN p-FET with Sirich LPCVD SiN_x gate insulator for high hole mobility[J].Journal of Semiconductors,2023,第8期 Zhenyao Li^1，2，Haonan Chang^1，2，Jia-Min Lai^1，2，Feilong Song^1，2，Qifeng Yao³，Hanqing Liu^1，2，Haiqiao Ni^1，2，4，Zhichuan Niu^1，2，4，Jun Zhang^1，2，3（State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences；Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences；Beijing Academy of Quantum Information Sciences；Joint Laboratory of Advanced Semiconductor,Nanjing Guoke Semiconductor CO.,Ltd）.Terahertz phononic crystal in plasmonic nanocavity[J].Journal of Semiconductors,2023,第8期 Zhenhao Sun¹，Ning Tang^1，2，Shuaiyu Chen¹，Fan Zhang³，Haoran Fan⁴，Shixiong Zhang¹，Rongxin Wang³，Xi Lin⁴，Jianping Liu³，Weikun Ge¹，Bo Shen^1，2（State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University；Frontiers Science Center for Nano-optoelectronics &Collaboration Innovation Center of Quantum Matter,Peking University；Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO),Chinese Academy of Sciences；International Center for Quantum Materials,Peking University）.Spin injection into heavily-doped n-GaN via Schottky barrier[J].Journal of Semiconductors,2023,第8期 Amgad A.Al-Saman^1，2，Eugeny A.Ryndin³，Xinchuan Zhang²，Yi Pei²，Fujiang Lin¹（School of Microelectronics,University of Science and Technology of China；Dynax Semiconductor Inc.；Department of Micro-and Nanoelectronics,Saint Petersburg Electrotechnical University）.Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs[J].Journal of Semiconductors,2023,第8期 Ying Li，Guozhen Shen（School of Integrated Circuits and Electronics,Beijing Institute of Technology）.Improving the films quality of Sn-based perovskites through additive treatment for high-performance light-emitting diodes[J].Journal of Semiconductors,2023,第8期 Rongliang Li¹，Yonghui Lin¹，Yang Li^1，2，Song Gao¹，Wenjing Yue¹，Hao Kan¹，Chunwei Zhang¹，Guozhen Shen³（School of Information Science and Engineering,University of Jinan；School of Microelectronics,Shandong University；School of Integrated Circuits and Electronics,Beijing Institute of Technology）.Amorphous gallium oxide homojunction-based optoelectronic synapse for multi-functional signal processing[J].Journal of Semiconductors,2023,第7期 Wei Guo，Zhao Han，Xiaolong Zhao，Guangwei Xu，Shibing Long（School of Microelectronics,University of Science and Technology of China）.Large-area β-Ga₂O₃ Schottky barrier diode and its application in DC–DC converters[J].Journal of Semiconductors,2023,第7期 Chao Wu，Huaile He，Haizheng Hu，Aiping Liu，Shunli Wang，Daoyou Guo，Fengmin Wu（Key Laboratory of Optical Field Manipulation of Zhejiang Province,Department of Physics,Zhejiang Sci-Tech University）.Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga₂O₃[J].Journal of Semiconductors,2023,第7期 Madani Labed¹，Ji Young Min¹，Amina Ben Slim²，Nouredine Sengouga²，Chowdam Venkata Prasad¹，Sinsu Kyoung³，You Seung Rim^1，4（Department of Intelligent Mechatronics Engineering,Sejong University；Laboratory of Semiconducting and Metallic Materials (LMSM),University of Biskra；Research and Development,Powercubesemi Inc.,Sujeong-gu,Seongnam-si；Department of Semiconductor Systems Engineering,Sejong University）.Tunneling via surface dislocation in W/β-Ga₂O₃ Schottky barrier diodes[J].Journal of Semiconductors,2023,第7期 Yonghui Zhang，Fei Xing（School of Physics and Optoelectronic Engineering,Shandong University of Technology）.Anisotropic optical and electric properties of β-gallium oxide[J].Journal of Semiconductors,2023,第7期 Xuanze Zhou，Guangwei Xu，Shibing Long（School of Microelectronics,University of Science and Technology of China）.A large-area multi-finger β-Ga₂O₃ MOSFET and its self-heating effect[J].Journal of Semiconductors,2023,第7期 Zhuolin Jiang¹，Xiangnan Li¹，Xuanze Zhou²，Yuxi Wei¹，Jie Wei¹，Guangwei Xu²，Shibing Long²，Xiaorong Luo¹（State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China；School of Microelectronics,University of Science and Technology of China）.Experimental investigation on the instability for NiO/β-Ga₂O₃ heterojunction-gate FETs under negative bias stress[J].Journal of Semiconductors,2023,第7期 Jiajia Tao¹，Guang Zeng¹，Xiaoxi Li¹，Yang Gu¹，Wenjun Liu¹，David Wei Zhang^1，2，Hongliang Lu^1，2（State Key Laboratory of ASIC and System,Shanghai Institute of Intelligent Electronics &Systems,School of Microelectronics,Fudan University；Jiashan Fudan Institute）.Surface plasmon assisted high-performance photodetectors based on hybrid TiO₂@GaO_xN_y-Ag heterostructure[J].Journal of Semiconductors,2023,第7期 Tingting Han，Yuangang Wang，Yuanjie Lv，Shaobo Dun，Hongyu Liu，Aimin Bu，Zhihong Feng（National Key Laboratory of Application Specific Integrated Circuit (ASIC),Hebei Semiconductor Research Institute）.2.83-kV double-layered NiO/β-Ga₂O₃ vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm~2[J].Journal of Semiconductors,2023,第7期 Guangwei Xu，Feihong Wu，Qi Liu，Zhao Han，Weibing Hao，Jinbo Zhou，Xuanze Zhou，Shu Yang，Shibing Long（School of Microelectronics,University of Science and Technology of China）.Vertical β-Ga₂O₃ power electronics[J].Journal of Semiconductors,2023,第7期 Zhang Yonghui，Xing Fei.Anisotropic optical and electric properties of beta-gallium oxide[J].半导体学报,2023,第7期 Shibing Long¹，Genquan Han²，Yuhao Zhang³，Yibo Wang⁴，Zhongming Wei⁵（School of Microelectronics,University of Science and Technology of China；School of Microelectronics,Xidian University；Center for Power Electronics Systems (CPES),Virginia Polytechnic Institute and State University,Blacksburg；Platform for Characterization &Test,Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO),Chinese Academy of Sciences；Institute of Semiconductors,Chinese Academy of Sciences）.Preface to Special Issue on Towards High Performance Ga₂O₃ Electronics：Power Devices and DUV Optoelectronic Devices（Ⅱ）[J].Journal of Semiconductors,2023,第7期 Wei Wang^1，2，Shudong Hu¹，Zilong Wang¹，Kaisen Liu¹，Jinfu Zhang¹，Simiao Wu¹，Yuxia Yang¹，Ning Xia³，Wenrui Zhang^1，4，Jichun Ye^1，4（Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China；The Faculty of Information Science and Engineering Ningbo University Ningbo 315211 China；Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Center Hangzhou 311200 China；Yongjiang Laboratory Ningbo 315201 China）.Exploring heteroepitaxial growth and electrical properties of α-Ga₂O₃ films on differently oriented sapphire substrates[J].Journal of Semiconductors,2023,第6期 Lijun Li，Chengkun Li，Shaoqing Wang，Qin Lu，Yifan Jia，Haifeng Chen（Key Laboratory of Advanced Semiconductor Devices and Materials, School of Electronic Engineering, Xi’an University of Posts&Telecommunications）.Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance[J].Journal of Semiconductors,2023,第6期 Xing Lu，Yuxin Deng，Yanli Pei，Zimin Chen，Gang Wang（State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University）.Recent advances in NiO/Ga₂O₃ heterojunctions for power electronics[J].Journal of Semiconductors,2023,第6期 Liyuan Cheng，Hezhi Zhang，Wenhui Zhang，Hongwei Liang（School of Microelectronics, Dalian University of Technology）.I nvestigation of β-Ga₂O₃ thick films grown on c-plane sapphire via carbothermal reduction[J].Journal of Semiconductors,2023,第6期 Botong Li^1，2，Xiaodong Zhang^1，2，Li Zhang¹，Yongjian Ma^1，2，Wenbo Tang^1，2，Tiwei Chen^1，2，Yu Hu^1，2，Xin Zhou²，Chunxu Bian²，Chunhong Zeng²，Tao Ju²，Zhongming Zeng^1，2，Baoshun Zhang^1，2（School of Nano Technology and Nano Bionics University of Science and Technology of China Hefei 230026 China；Nano Fabrication Facility Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China）.A comprehensive review of recent progress on enhancementmode β-Ga₂O₃ FETs: Growth, devices and properties[J].Journal of Semiconductors,2023,第6期 Wenbo Tang^1，2，Xueli Han^3，4，Xiaodong Zhang^1，2，Botong Li^1，2，Yongjian Ma^1，2，Li Zhang²，Tiwei Chen^1，2，Xin Zhou²，Chunxu Bian²，Yu Hu^1，2，Duanyang Chen³，Hongji Qi^3，4，Zhongming Zeng^1，2，Baoshun Zhang^1，2（School of Nano-Tech and Nano-Bionics University of Science and Technology of China Hefei 230026 China；Nanofabrication facility Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China；Research Center of Laser Crystal Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai 201800 China；Hangzhou Institute of Optics and Fine Mechanics Hangzhou 311421 China）.Homoepitaxial growth of (100) Si-doped β-Ga₂O₃ films via MOCVD[J].Journal of Semiconductors,2023,第6期 Xiaojie Wang¹，Wenxiang Mu^1，2，Jiahui Xie¹，Jinteng Zhang¹，Yang Li¹，Zhitai Jia^1，3，Xutang Tao^1，2（State Key Laboratory of Crystal Materials Institute of novel semiconductors Institute of Crystal materials Shandong University Jinan 250100China；Shenzhen Research Institute of Shandong University Shenzhen 518057 China；Shandong Research Institute of Industrial Technology Jinan 250101 China）.Rapid epitaxy of 2-inch and high-quality α-Ga₂O₃ films by mist-CVD method[J].Journal of Semiconductors,2023,第6期 Yuefei Wang¹，Yurui Han¹，Chong Gao¹，Bingsheng Li¹，Jiangang Ma¹，Haiyang Xu¹，Aidong Shen²，Yichun Liu¹（Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University；Department of Electrical Engineering, The City College of New York）.Preparation and photodetection performance of high crystalline quality and large size β-Ga₂O₃ microwires[J].Journal of Semiconductors,2023,第6期首页上一页 1 2 3 4 5 下一页尾页共有6页，转到页

期刊文章列表