期刊的影响因子--文章列表

期刊文章列表
Liyang Zhu¹，Kuangli Chen¹，Ying Ma²，Yong Cai²，Chunhua Zhou¹，Zhaoji Li¹，Bo Zhang¹，Qi Zhou^1，3（State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China；Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics；Institute of Electronic and Information Engineering,University of Electronic Science and Technology of China）.High threshold voltage enhancement-mode GaN p-FET with Sirich LPCVD SiN_x gate insulator for high hole mobility[J].Journal of Semiconductors,2023,第8期 Xiaodong Li¹，Jie Sun²，Bozhang Li³，Junfeng Fang¹，Liming Ding²（School of Physics and Electronic Science,Engineering Research Center of Nanophotonics &Advanced Instrument (MoE),East China Normal University；Center for Excellence in Nanoscience (CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS),National Center for Nanoscience and Technology；East Chapel Hill High School,Chapel Hill）.Managing excess PbI₂ for efficient perovskite solar cells[J].Journal of Semiconductors,2023,第8期 Amgad A.Al-Saman^1，2，Eugeny A.Ryndin³，Xinchuan Zhang²，Yi Pei²，Fujiang Lin¹（School of Microelectronics,University of Science and Technology of China；Dynax Semiconductor Inc.；Department of Micro-and Nanoelectronics,Saint Petersburg Electrotechnical University）.Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs[J].Journal of Semiconductors,2023,第8期 Yuheng Zeng^1，2，3，Zetao Ding^1，2，3，Zunke Liu^1，2，3，Wei Liu^1，3，Mingdun Liao^1，3，Xi Yang^1，2，3，Zhiqin Ying^1，3，Jingsong Sun^1，3，Jiang Sheng^1，2，3，Baojie Yan^1，2，3，Haiyan He⁴，Chunhui Shou⁴，Zhenhai Yang^1，3，Jichun Ye^1，2，3（Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences；University of Chinese Academy of Sciences；Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices,Ningbo Institute of Materials Technology &Engineering；Zhejiang Energy Group R &D）.Efficiency-loss analysis of monolithic perovskite/silicon tandem solar cells by identifying the patterns of a dual two-diode model’s current-voltage curves[J].Journal of Semiconductors,2023,第8期 Yao Li¹，Haiou Zhu^1，2，Zongpeng Song²（New Materials and New Energies,Shen Zhen Technology University；Analysis and Testing Center,Shen Zhen Technology University）.Pressure manipulation of ultrafast carrier dynamics in monolayer WS₂[J].Journal of Semiconductors,2023,第8期 Zhenyao Li^1，2，Haonan Chang^1，2，Jia-Min Lai^1，2，Feilong Song^1，2，Qifeng Yao³，Hanqing Liu^1，2，Haiqiao Ni^1，2，4，Zhichuan Niu^1，2，4，Jun Zhang^1，2，3（State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences；Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences；Beijing Academy of Quantum Information Sciences；Joint Laboratory of Advanced Semiconductor,Nanjing Guoke Semiconductor CO.,Ltd）.Terahertz phononic crystal in plasmonic nanocavity[J].Journal of Semiconductors,2023,第8期 Zhimin Fang¹，Jie Sun²，Shengzhong (Frank) Liu¹，Liming Ding²（Key Laboratory of Applied Surface and Colloid Chemistry (MoE),School of Materials Science and Engineering,Shaanxi Normal University；Center for Excellence in Nanoscience (CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS),National Center for Nanoscience and Technology）.Defects in perovskite crystals[J].Journal of Semiconductors,2023,第8期 Zhenhao Sun¹，Ning Tang^1，2，Shuaiyu Chen¹，Fan Zhang³，Haoran Fan⁴，Shixiong Zhang¹，Rongxin Wang³，Xi Lin⁴，Jianping Liu³，Weikun Ge¹，Bo Shen^1，2（State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University；Frontiers Science Center for Nano-optoelectronics &Collaboration Innovation Center of Quantum Matter,Peking University；Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO),Chinese Academy of Sciences；International Center for Quantum Materials,Peking University）.Spin injection into heavily-doped n-GaN via Schottky barrier[J].Journal of Semiconductors,2023,第8期 Yujie Hu¹，Zhixiang Chen¹，Yi Xiang¹，Chuanhui Cheng¹，Weifeng Liu²，Weishen Zhan¹（School of Physics,Dalian University of Technology；Mechanical and Electrical Engineering College,Hainan University）.Enhanced efficiency of the Sb₂Se₃ thin-film solar cell by the anode passivation using an organic small molecular of TCTA[J].Journal of Semiconductors,2023,第8期 Ao Song，Qiri Huang，Chunyang Zhang，Haoran Tang，Kai Zhang，Chunchen Liu，Fei Huang，Yong Cao（Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices,South China University of Technology (SCUT)）.Highly efficient organic solar cells with improved stability enabled by ternary copolymers with antioxidant side chains[J].Journal of Semiconductors,2023,第8期 Ying Li，Guozhen Shen（School of Integrated Circuits and Electronics,Beijing Institute of Technology）.Improving the films quality of Sn-based perovskites through additive treatment for high-performance light-emitting diodes[J].Journal of Semiconductors,2023,第8期 Xuanze Zhou，Guangwei Xu，Shibing Long（School of Microelectronics,University of Science and Technology of China）.A large-area multi-finger β-Ga₂O₃ MOSFET and its self-heating effect[J].Journal of Semiconductors,2023,第7期 Zhuolin Jiang¹，Xiangnan Li¹，Xuanze Zhou²，Yuxi Wei¹，Jie Wei¹，Guangwei Xu²，Shibing Long²，Xiaorong Luo¹（State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China；School of Microelectronics,University of Science and Technology of China）.Experimental investigation on the instability for NiO/β-Ga₂O₃ heterojunction-gate FETs under negative bias stress[J].Journal of Semiconductors,2023,第7期 Yonghui Zhang，Fei Xing（School of Physics and Optoelectronic Engineering,Shandong University of Technology）.Anisotropic optical and electric properties of β-gallium oxide[J].Journal of Semiconductors,2023,第7期 Rongliang Li¹，Yonghui Lin¹，Yang Li^1,2，Song Gao¹，Wenjing Yue¹，Hao Kan¹，Chunwei Zhang¹，Guozhen Shen³（School of Information Science and Engineering,University of Jinan；School of Microelectronics,Shandong University；School of Integrated Circuits and Electronics,Beijing Institute of Technology）.Amorphous gallium oxide homojunction-based optoelectronic synapse for multi-functional signal processing[J].Journal of Semiconductors,2023,第7期 Madani Labed¹，Ji Young Min¹，Amina Ben Slim²，Nouredine Sengouga²，Chowdam Venkata Prasad¹，Sinsu Kyoung³，You Seung Rim^1,4（Department of Intelligent Mechatronics Engineering,Sejong University；Laboratory of Semiconducting and Metallic Materials (LMSM),University of Biskra；Research and Development,Powercubesemi Inc.,Sujeong-gu,Seongnam-si；Department of Semiconductor Systems Engineering,Sejong University）.Tunneling via surface dislocation in W/β-Ga₂O₃ Schottky barrier diodes[J].Journal of Semiconductors,2023,第7期 Wei Guo，Zhao Han，Xiaolong Zhao，Guangwei Xu，Shibing Long（School of Microelectronics,University of Science and Technology of China）.Large-area β-Ga₂O₃ Schottky barrier diode and its application in DC–DC converters[J].Journal of Semiconductors,2023,第7期 Chao Wu，Huaile He，Haizheng Hu，Aiping Liu，Shunli Wang，Daoyou Guo，Fengmin Wu（Key Laboratory of Optical Field Manipulation of Zhejiang Province,Department of Physics,Zhejiang Sci-Tech University）.Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga₂O₃[J].Journal of Semiconductors,2023,第7期 Tingting Han，Yuangang Wang，Yuanjie Lv，Shaobo Dun，Hongyu Liu，Aimin Bu，Zhihong Feng（National Key Laboratory of Application Specific Integrated Circuit (ASIC),Hebei Semiconductor Research Institute）.2.83-kV double-layered NiO/β-Ga₂O₃ vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm~2[J].Journal of Semiconductors,2023,第7期 Jiajia Tao¹，Guang Zeng¹，Xiaoxi Li¹，Yang Gu¹，Wenjun Liu¹，David Wei Zhang^1,2，Hongliang Lu^1,2（State Key Laboratory of ASIC and System,Shanghai Institute of Intelligent Electronics &Systems,School of Microelectronics,Fudan University；Jiashan Fudan Institute）.Surface plasmon assisted high-performance photodetectors based on hybrid TiO₂@GaO_xN_y-Ag heterostructure[J].Journal of Semiconductors,2023,第7期 Jiang Zhuolin，Li Xiangnan，Zhou Xuanze，Wei Yuxi，Wei Jie，Xu Guangwei，Long Shibing，Luo Xiaorong.Experimental investigation on the instability for NiO/beta-Ga_2O_3 heterojunction-gate FETs under negative bias stress[J].半导体学报,2023,第7期 Guangwei Xu，Feihong Wu，Qi Liu，Zhao Han，Weibing Hao，Jinbo Zhou，Xuanze Zhou，Shu Yang，Shibing Long（School of Microelectronics,University of Science and Technology of China）.Vertical β-Ga₂O₃ power electronics[J].Journal of Semiconductors,2023,第7期 Han Tingting，Wang Yuangang，Lv Yuanjie，Dun Shaobo，Liu Hongyu，Bu Aimin，Feng Zhihong.2.83-kV double-layered NiO/beta-Ga_2O_3 vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm2[J].半导体学报,2023,第7期 Zhou Xuanze，Xu Guangwei，Long Shibing.A large-area multi-finger beta-Ga_2O_3 MOSFET and its self-heating effect[J].半导体学报,2023,第7期 Shibing Long¹，Genquan Han²，Yuhao Zhang³，Yibo Wang⁴，Zhongming Wei⁵（School of Microelectronics,University of Science and Technology of China；School of Microelectronics,Xidian University；Center for Power Electronics Systems (CPES),Virginia Polytechnic Institute and State University,Blacksburg；Platform for Characterization &Test,Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO),Chinese Academy of Sciences；Institute of Semiconductors,Chinese Academy of Sciences）.Preface to Special Issue on Towards High Performance Ga₂O₃ Electronics：Power Devices and DUV Optoelectronic Devices（Ⅱ）[J].Journal of Semiconductors,2023,第7期 Guo Wei，Han Zhao，Zhao Xiaolong，Xu Guangwei，Long Shibing.Large-area beta-Ga_2O_3 Schottky barrier diode and its application in DC-DC converters[J].半导体学报,2023,第7期 Zhang Yonghui，Xing Fei.Anisotropic optical and electric properties of beta-gallium oxide[J].半导体学报,2023,第7期 Labed Madani，Min Ji Young，Slim Amina Ben，Sengouga Nouredine，Prasad Chowdam Venkata，Kyoung Sinsu，Rim You Seung.Tunneling via surface dislocation in W/beta-Ga_2O_3 Schottky barrier diodes[J].半导体学报,2023,第7期 Xu Guangwei，Wu Feihong，Liu Qi，Han Zhao，Hao Weibing，Zhou Jinbo，Zhou Xuanze，Yang Shu，Long Shibing.Vertical beta-Ga_2O_3 power electronics[J].半导体学报,2023,第7期首页上一页 1 2 3 4 5 下一页尾页共有7页，转到页

期刊文章列表