期刊的影响因子--文章列表

期刊文章列表
李登全，张靓，朱樟明，杨银堂（School of Microelectronics,Xidian University）.Modeling of channel mismatch in time-interleaved SAR ADC[J].半导体学报(英文版),2015,第9期彭晓钧^1，2，杨坤涛¹，元秀华¹（School of Optical and Electronic Information,Huazhong University of Science and Technology；Wuhan Second Ship Design Research Institute）.A novel pressure sensor calibration system based on a neural network[J].半导体学报(英文版),2015,第9期任志雄，张科峰，刘览琦，李聪，陈晓飞，刘冬生，刘政林，邹雪城（School of Optical and Electronic Information,Huazhong University of Science and Technology）.On-chip power-combining techniques for watt-level linear power amplifiers in 0.18 μm CMOS[J].半导体学报(英文版),2015,第9期赵华，姚鸿飞，丁芃，苏永波，宁晓曦，金智，刘新宇（Institute of Microelectronics,Chinese Academy of Sciences）.A full W-band low noise amplifier module for millimeter-wave applications[J].半导体学报(英文版),2015,第9期姚言¹，刘雄¹，袁立²，张兆华¹，任天令²（Integrated Micro/Nano Systems Laboratory,Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences；Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology,Tsinghua University）.A novel PIN photodetector with double linear arrays for rainfall prediction[J].半导体学报(英文版),2015,第9期李新开，霍宗亮，靳磊，姜丹丹，洪培真，徐强，唐兆云，李春龙，叶甜春（Institute of Microelectronics,Chinese Academy of Sciences）.Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trapping memory[J].半导体学报(英文版),2015,第9期王哲力，周建军，孔月婵，孔岑，董逊，杨洋，陈堂胜（Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute）.Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al₂O₃ as gate insulator[J].半导体学报(英文版),2015,第9期李妍月¹，邓小川¹，刘云峰²，赵艳黎³，李诚瞻³，陈茜茜¹，张波¹（State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China；Institute of Optics and Electronics,Chinese Academy of Sciences；Power Electronics Business Unit,Zhuzhou CSR Times Electric Co.,Ltd.）.Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO₂ after high temperature oxidation[J].半导体学报(英文版),2015,第9期王丹丹，王卿璞，王汉斌，张锡健，武丽伟，李福杰，袁帅（School of Physics,Shandong University）.Characteristics of sputtered Y-doped IZO thin films and devices[J].半导体学报(英文版),2015,第9期 T.Tibermacine¹，A.Merazga²，M.Ledra¹，N.Ouhabab¹（Laboratory of Metallic and Semi-conducting Materials,University of Biskra；Physics Department,Faculty of Science,Taif University）.Extraction of the defect density of states in microcrystalline silicon from experimental results and simulation studies[J].半导体学报(英文版),2015,第9期段吉海，邓东宇，徐卫林，韦保林（Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology）.An extremely low power voltage reference with high PSRR for power-aware ASICs[J].半导体学报(英文版),2015,第9期戴庆芸¹，田晓丽²，张文亮²，卢烁今³，朱阳军³（Jiangsu R&D Center for Internet of Things；Institute of Microelectronics,Chinese Academy of Sciences；Junshine CAS-IGBT Technology Co.,Ltd）.4500 V SPT⁺ IGBT optimization on static and dynamic losses[J].半导体学报(英文版),2015,第9期韩锴¹，王晓磊²，王文武²（Department of Physics and Electronic Science,Weifang University；Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences）.Physical origin investigation of the flatband voltage roll off for metal–oxide–semiconductor device with high-k/metal gate structure[J].半导体学报(英文版),2015,第9期鲁伟明，王志刚，胡辉（Enterprise Technology Center,Taizhou Detong Electric. Co. Ltd）.Polarization effects and tests for crystalline silicon solar cells[J].半导体学报(英文版),2015,第9期 Arash Rezapour¹，Pegah Rezapour²（Electrical Engineering Department,Faculty of Engineering,Islamic Azad University of Arak；MSc,Electrical Engineering Department,Faculty of Engineering,Islamic Azad University of Khomein）.The effect of random dopant fluctuation on threshold voltage and drain current variation in junctionless nanotransistors[J].半导体学报(英文版),2015,第9期金凌¹，Nathalie Rolland²（SVA Communication Technology Co.,Ltd；Institut d’Electronique,de Microélectronique et de Nanotechnologie,USTL,Villeneuve d’Ascq Cedex,France）.Millimeter wave band ultra wideband transmitter MMIC[J].半导体学报(英文版),2015,第9期俞小宝，韩思阳，靳宗明，王志华，池保勇（Institute of Microelectronics,Tsinghua University）.A class-CVCO based Σ–Δ fraction-N frequency synthesizer with AFC for 802.11ah applications[J].半导体学报(英文版),2015,第9期 Lara Valentic,Nima E.Gorji（Department of Environment Sciences, University of Nova Gorica, Nova Gorica 5000, Slovenia；Department of Physics, Brown University, Providence 02912, Rhode Island, U SA）.Comment on “Chen et al., Fabrication and photovoltaic conversion enhancement...”,Electrochimica Acta,2014[J].半导体学报(英文版),2015,第9期 S.Intekhab Amin，R.K.Sarin（Department of Electronics and Communication Engineering,Dr.B.R.Ambedkar National Institute of Technology Jalandhar）.The impact of gate misalignment on the analog performance of a dual-material double gate junctionless transistor[J].半导体学报(英文版),2015,第9期王志明¹，赵卓彬¹，胡志富²，黄辉³，崔玉兴²，孙希国²，默江辉²，李亮²，付兴昌²，吕昕¹（Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology；Hebei Semiconductor Research Institute；National Institute of Metrology）.DESIGN AND IMPLEMENTATION OF 83-NM LOW NOISE INP-BASED INALAS/INGAAS PHEMTS[J].半导体学报(英文版),2015,第8期 VINAYAK HANDE，MARYAM SHOJAEI BAGHINI（Indian Institute of Technology Bombay）.AN INHERENT CURVATURE-COMPENSATED VOLTAGE REFERENCE USING NON-LINEARITY OF GATE COUPLING COEFFICIENT[J].半导体学报(英文版),2015,第8期何滢¹，王德印¹，葛樊²，刘丽³（College of Instrumentation & Electrical Engineering, Jilin University；Construction Engineering College, Jilin University；State Key Laboratory of Superhard Materials, College of Physics, Jilin University）.SnO₂-doped ɑ-Fe₂O₃ patulous microtubes for high performance formaldehyde sensing[J].半导体学报(英文版),2015,第8期赵宗彦，赵响（Faculty of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology）.Electronic, optical, and mechanical properties of Cu₂ZnSnS₄ with four crystal structures[J].半导体学报(英文版),2015,第8期卓世异，刘熙，刘学超，施尔畏（Shanghai Institute of Ceramics, Chinese Academy of Sciences）.RECENT PROGRESS IN RESEARCH OF F-SIC CODOPED WITH N–B–AL PAIRS FOR OPTOELECTRONICS[J].半导体学报(英文版),2015,第8期闫国栋，汪敏强，杨智（Electronic Materials Research Laboratory (EMRL), Key Laboratory of Education Ministry, International Center for Dielectric Research, Xi’an Jiaotong University）.ZNO/AG NANOWIRES COMPOSITE FILM ULTRAVIOLET PHOTOCONDUCTIVE DETECTOR[J].半导体学报(英文版),2015,第8期郭奕栾，王桂磊，赵超，罗军（Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences）.Simulation and characterization of stress in FinFETs using novel LKMC and nanobeam diffraction methods[J].半导体学报(英文版),2015,第8期徐鹏，宋旭波，吕元杰，王元刚，敦少博，尹甲运，房玉龙，顾国栋，冯志红，蔡树军（National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute）.W-BAND GAN MMIC PA WITH 257 MW OUTPUT POWER AT 86.5 GHZ[J].半导体学报(英文版),2015,第8期 P.Jantawongrit^1，2，S.Sanorpim³，H.Yaguchi⁴，M.Orihara⁴，P.Limsuwan^1，2（Department of Physics, Faculty of Science, King Mongkut’s University of Technology Thonburi；Thailand Center of Excellence in Physics, CHE, Ministry of Education；Department of Physics, Faculty of Science, Chulalongkorn University；Graduate School of Science and Engineering, Saitama University）.MICROSTRUCTURES OF INN FILM ON 4H-SIC(0001) SUBSTRATE GROWN BY RF-MBE[J].半导体学报(英文版),2015,第8期首页上一页 2 3 4 5 6 下一页尾页共有13页，转到页

期刊文章列表