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Baoqi Wu1,Bingyan Yin1,Chunhui Duan1,Liming Ding2(State Key Laboratory of Luminescent Materials and Devices South China University of Technology;Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology).All-polymer solar cells[J].Journal of Semiconductors,2021,第8期
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Side Song1,Guozhu Liu1,2,Hailiang Zhang1,Lichao Chao1,Jinghe Wei1,Wei Zhao1,Genshen Hong1,Qi He1(The 58th Institution of Electronic Science and Technology Group Corporation of China;School of Electronic Science and Engineering Southeast University).Reliability evaluation on sense-switch p-channel flash[J].Journal of Semiconductors,2021,第8期
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Ankush Parmar1,Jashangeet Kaur2,Manish Dev Sharma1,Navdeep Goyal1(Centre of Applied Sciences Department of Physics Sector-14 Panjab University;Department of Physics G.G.D.S.D College Sector-32).Extensive study of optical contrast between bulk and nanoscale transition metal dichalcogenide semiconductors[J].Journal of Semiconductors,2021,第8期
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Mengqi Zhang1,Chuantian Zuo2,Jianjun Tian1,Liming Ding2(China;China).Blue perovskite LEDs[J].Journal of Semiconductors,2021,第7期
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Hushan Zhang,Zhiwen Jin(China).Suppressed light-induced phase transition of CsPbBr2I:Strategies, progress and applications in the photovoltaic field[J].Journal of Semiconductors,2021,第7期
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Rongfeng Tang1,Tao Chen1,Liming Ding2(China;China).Engineering microstructures for efficient Sb2(Sx Se1-x)3 solar cells[J].Journal of Semiconductors,2021,第7期
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Wenzhe Li,Naveed Ur Rahman,Yeming Xian,Hang Yin,Yunkai Bao,Yi Long,Songyang Yuan,Yangyi Zhang,Yaxuan Yuan,Jiandong Fan(China).Regulation of the order-disorder phase transition in a Cs2NaFeCl6 double perovskite towards reversible thermochromic application[J].Journal of Semiconductors,2021,第7期
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Yao Chen1,2,3,Shulun Li3,4,5,Xiangjun Shang3,4,5,Xiangbin Su3,4,5,Huiming Hao3,4,5,Jiaxin Shen6,Yu Zhang3,4,5,Haiqiao Ni3,4,5,Ying Ding1,2,3,Zhichuan Niu3,4,5(China;China;China;China;China;China).Fiber coupled high count-rate single-photon generated from InAs quantum dots[J].Journal of Semiconductors,2021,第7期
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Lixiu Zhang1,2,Chuantian Zuo1,Liming Ding1(China;China).Efficient MAPbI3 solar cells made via drop-coating at room temperature[J].Journal of Semiconductors,2021,第7期
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Ailing Tang1,Zuo Xiao1,Liming Ding1,Erjun Zhou1,2(China;China).~1.2 V open-circuit voltage from organic solar cells[J].Journal of Semiconductors,2021,第7期
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Wenqiang Huang,Rui Lin,Weijie Chen,Yuzhu Wang,Hong Zhang(China).High room-temperature magnetization in Co-doped TiO2 nanoparticles promoted by vacuum annealing for different durations[J].Journal of Semiconductors,2021,第7期
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Shubham Dadhich1,A.D.D.Dwivedi1,Arun Kumar Singh2(India;India).Fabrication, characterization, numerical simulation and compact modeling of P3HT based organic thin film transistors[J].Journal of Semiconductors,2021,第7期
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Yufan Jiang1,2,Ke Jin2,Xiujuan Chen2,Zuo Xiao2,Xiaotao Zhang1,Liming Ding2(China;China).Post-sulphuration enhances the performance of a lactone polymer donor[J].Journal of Semiconductors,2021,第7期
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Jianqiu Hou1,Zengwen Hu1,Kuowen Lai2,Yule Sun2,Bo Shao2,Chunyang Wang2,Xinran Liu2,Karson Liu2(China;China).The investigation of DARC etch back in DRAM capacitor oxide mask opening[J].Journal of Semiconductors,2021,第7期
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Ahmed Wahba,Lin Cheng,Fujiang Lin(China).A15 Gbps-NRZ, 30 Gbps-PAM4, 120 mA laser diode driver implemented in 0.15-μm GaAs E-mode pHEMT technology[J].Journal of Semiconductors,2021,第7期
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S.Kerour1,2,A.Bouloufa1,2,M.Lasladj1,2,K.Djessas3,K.Medjnoun3(Laboratoire PROMES-CNRS Université Via Domitia Perpignan 66100).Structural and electrical characterization of Cu2ZnSnS4 ingot material grown by melting method[J].Journal of Semiconductors,2021,第7期
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Wahba Ahmed,Cheng Lin,Lin Fujiang.A 15 Gbps-NRZ, 30 Gbps-PAM4, 120 mA laser diode driver implemented in 0.15-mum GaAs E-mode pHEMT technology[J].半导体学报,2021,第7期
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Lixiu Zhang,Chuantian Zuo,Liming Ding(Center for Excellence in Nanoscience (CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS),National Center for Nanoscience and Technology,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Center for Excellence in Nanoscience (CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS),National Center for Nanoscience and Technology,Beijing 100190,China).Efficient MAPbl3 solar cells made via drop-coating at room temperature[J].半导体学报(英文版),2021,第7期
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Ahmed Wahba,Lin Cheng,Fujiang Lin(School of Microelectronics,University of Science and Technology of China,Hefei 230026,China).A 15 Gbps-NRZ,30 Gbps-PAM4,120 mA laser diode driver implemented in 0.15-an GaAs E-mode pHEMT technology[J].半导体学报(英文版),2021,第7期
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Ke Jin,Zuo Xiao,Liming Ding(China).18.69% PCE from organic solar cells[J].Journal of Semiconductors,2021,第6期
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Run Tian1,2,Chao Ma3,Jingmin Wu1,2,Zhiyu Guo1,2,Xiang Yang1,Zhongchao Fan1,4(China;China;China;China).A review of manufacturing technologies for silicon carbide superjunction devices[J].Journal of Semiconductors,2021,第6期
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Jongwoon Yoon,Kwangsoo Kim(Department of Electronic Engineering Sogang University Seoul 04107).A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance[J].Journal of Semiconductors,2021,第6期
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Bowen Liu,Jiangtao Xu(China).Modeling the photon counting and photoelectron counting characteristics of quanta image sensors[J].Journal of Semiconductors,2021,第6期
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Xiongfeng Li1,2,Jingui Xu2,3,Zuo Xiao2,Xingzhu Wang1,Bin Zhang3,Liming Ding2(China;China;China).Dithieno[3',2':3,4;2'',3'':5,6]benzo[1,2-c][1,2,5]oxadiazole-based polymer donors with deep HOMO levels[J].Journal of Semiconductors,2021,第6期
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Yujia Li1,2,Jianshi Tang2,3,Bin Gao2,3,Xinyi Li2,Yue Xi2,Wanrong Zhang1,He Qian2,3,Huaqiang Wu2,3(China;China;China).Oscillation neuron based on a low-variability threshold switching device for high-performance neuromorphic computing[J].Journal of Semiconductors,2021,第6期
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Rui He1,Chuantian Zuo2,Shengqiang Ren1,Dewei Zhao1,Liming Ding2(China).L ow-bandgap Sn–Pb perovskite solar cells[J].Journal of Semiconductors,2021,第6期
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