期刊的影响因子--文章列表

期刊文章列表
Xiaojie Wang¹，Wenxiang Mu^1，2，Jiahui Xie¹，Jinteng Zhang¹，Yang Li¹，Zhitai Jia^1，3，Xutang Tao^1，2（State Key Laboratory of Crystal Materials Institute of novel semiconductors Institute of Crystal materials Shandong University Jinan 250100China；Shenzhen Research Institute of Shandong University Shenzhen 518057 China；Shandong Research Institute of Industrial Technology Jinan 250101 China）.Rapid epitaxy of 2-inch and high-quality α-Ga₂O₃ films by mist-CVD method[J].Journal of Semiconductors,2023,第6期 Xing Lu，Yuxin Deng，Yanli Pei，Zimin Chen，Gang Wang（State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University）.Recent advances in NiO/Ga₂O₃ heterojunctions for power electronics[J].Journal of Semiconductors,2023,第6期 Lijun Li，Chengkun Li，Shaoqing Wang，Qin Lu，Yifan Jia，Haifeng Chen（Key Laboratory of Advanced Semiconductor Devices and Materials, School of Electronic Engineering, Xi’an University of Posts&Telecommunications）.Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance[J].Journal of Semiconductors,2023,第6期 Wei Wang^1，2，Shudong Hu¹，Zilong Wang¹，Kaisen Liu¹，Jinfu Zhang¹，Simiao Wu¹，Yuxia Yang¹，Ning Xia³，Wenrui Zhang^1，4，Jichun Ye^1，4（Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China；The Faculty of Information Science and Engineering Ningbo University Ningbo 315211 China；Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Center Hangzhou 311200 China；Yongjiang Laboratory Ningbo 315201 China）.Exploring heteroepitaxial growth and electrical properties of α-Ga₂O₃ films on differently oriented sapphire substrates[J].Journal of Semiconductors,2023,第6期 Wenbo Tang^1，2，Xueli Han^3，4，Xiaodong Zhang^1，2，Botong Li^1，2，Yongjian Ma^1，2，Li Zhang²，Tiwei Chen^1，2，Xin Zhou²，Chunxu Bian²，Yu Hu^1，2，Duanyang Chen³，Hongji Qi^3，4，Zhongming Zeng^1，2，Baoshun Zhang^1，2（School of Nano-Tech and Nano-Bionics University of Science and Technology of China Hefei 230026 China；Nanofabrication facility Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China；Research Center of Laser Crystal Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai 201800 China；Hangzhou Institute of Optics and Fine Mechanics Hangzhou 311421 China）.Homoepitaxial growth of (100) Si-doped β-Ga₂O₃ films via MOCVD[J].Journal of Semiconductors,2023,第6期 Yuefei Wang¹，Yurui Han¹，Chong Gao¹，Bingsheng Li¹，Jiangang Ma¹，Haiyang Xu¹，Aidong Shen²，Yichun Liu¹（Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University；Department of Electrical Engineering, The City College of New York）.Preparation and photodetection performance of high crystalline quality and large size β-Ga₂O₃ microwires[J].Journal of Semiconductors,2023,第6期 Botong Li^1，2，Xiaodong Zhang^1，2，Li Zhang¹，Yongjian Ma^1，2，Wenbo Tang^1，2，Tiwei Chen^1，2，Yu Hu^1，2，Xin Zhou²，Chunxu Bian²，Chunhong Zeng²，Tao Ju²，Zhongming Zeng^1，2，Baoshun Zhang^1，2（School of Nano Technology and Nano Bionics University of Science and Technology of China Hefei 230026 China；Nano Fabrication Facility Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China）.A comprehensive review of recent progress on enhancementmode β-Ga₂O₃ FETs: Growth, devices and properties[J].Journal of Semiconductors,2023,第6期 Liyuan Cheng，Hezhi Zhang，Wenhui Zhang，Hongwei Liang（School of Microelectronics, Dalian University of Technology）.I nvestigation of β-Ga₂O₃ thick films grown on c-plane sapphire via carbothermal reduction[J].Journal of Semiconductors,2023,第6期 Genquan Han¹，Shibing Long²，Yuhao Zhang³，Yibo Wang⁴，Zhongming Wei⁵（School of Microelectronics, Xidian University；School of Microelectronics, University of Science and Technology of China；Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Blacksburg；Platform for Characterization & Test, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences；Institute of Semiconductors, Chinese Academy of Sciences）.Preface to Special Issue on Towards High Performance Ga₂O₃ Electronics: Epitaxial Growth and Power Devices (Ⅰ)[J].Journal of Semiconductors,2023,第6期 Tang Wenbo，Han Xueli，Zhang Xiaodong，Li Botong，Ma Yongjian，Zhang Li，Chen Tiwei，Zhou Xin，Bian Chunxu，Hu Yu，Chen Duanyang，Qi Hongji，Zeng Zhongming，Zhang Baoshun.Homoepitaxial growth of(100)Si-doped beta-Ga_2O_3 films via MOCVD[J].半导体学报,2023,第6期 Wang Xiaojie，Mu Wenxiang，Xie Jiahui，Zhang Jinteng，Li Yang，Jia Zhitai，Tao Xutang.Rapid epitaxy of 2-inch and high-quality alpha-Ga_2O_3 films by mist- CVD method[J].半导体学报,2023,第6期 Genquan Han¹，Tiangui You²，Yibo Wang³，Zheng-Dong Luo¹，Xin Ou²，Yue Hao¹（School of Microelectronics, Xidian University；State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences；Suzhou institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences）.Heterogeneous integration technology for the thermal management of Ga₂O₃ power devices[J].Journal of Semiconductors,2023,第6期 Li Botong，Zhang Xiaodong，Zhang Li，Ma Yongjian，Tang Wenbo，Chen Tiwei，Hu Yu，Zhou Xin，Bian Chunxu，Zeng Chunhong，Ju Tao，Zeng Zhongming，Zhang Baoshun.A comprehensive review of recent progress on enhancementmode beta-Ga_2O_3 FETs:Growth, devices and properties[J].半导体学报,2023,第6期 Cheng Liyuan，Zhang Hezhi，Zhang Wenhui，Liang Hongwei.Investigation of beta-Ga_2O_3 thick films grown on c-plane sapphire via carbothermal reduction[J].半导体学报,2023,第6期 Wang Yuefei，Han Yurui，Gao Chong，Li Bingsheng，Ma Jiangang，Xu Haiyang，Shen Aidong，Liu Yichun.Preparation and photodetection performance of high crystalline quality and large size beta-Ga_2O_3 microwires[J].半导体学报,2023,第6期 Wang Wei，Hu Shudong，Wang Zilong，Liu Kaisen，Zhang Jinfu，Wu Simiao，Yang Yuxia，Xia Ning，Zhang Wenrui，Ye Jichun.Exploring heteroepitaxial growth and electrical properties of alpha- Ga_2O_3 films on differently oriented sapphire substrates[J].半导体学报,2023,第6期 Chen Mu¹，Jiapei Zheng¹，Chixiao Chen^1，2（State Key Laboratory of Integrated Chips and Systems,Frontier Institute of Chips and Systems,Fudan University；Qizhi Institute）.Beyond convolutional neural networks computing: New trends on ISSCC 2023 machine learning chips[J].Journal of Semiconductors,2023,第5期 Zhaohui Sun¹，Yang Feng¹，Peng Guo²，Zheng Dong¹，Junyu Zhang³，Jing Liu⁴，Xuepeng Zhan¹，Jixuan Wu¹，Jiezhi Chen¹（School of Information Science and Engineering (ISE),Shandong University；Shandong Sinochip Semiconductors Co.Ltd；Neumem Co.,Ltd；Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences）.Flash-based in-memory computing for stochastic computing in image edge detection[J].Journal of Semiconductors,2023,第5期 Rongkai Lu¹，Siqin Li¹，Jianguo Lu^1，2，Bojing Lu¹，Ruqi Yang¹，Yangdan Lu¹，Wenyi Shao¹，Yi Zhao³，Liping Zhu^1，2，Fei Zhuge⁴，Zhizhen Ye^1，2（State Key Laboratory of Silicon Materials,Key Laboratory for Biomedical Engineering of Ministry of Education,School of Materials Science and Engineering,Zhejiang University；Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials,Institute of Wenzhou,Zhejiang University；Department of Electronic Science and Technology,College of Information Science and Electronic Engineering,Zhejiang University；Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences）.Homojunction structure amorphous oxide thin film transistors with ultra-high mobility[J].Journal of Semiconductors,2023,第5期 Moufu Kong¹，Zewei Hu¹，Ronghe Yan¹，Bo Yi¹，Bingke Zhang²，Hongqiang Yang¹（State Key Laboratory of Electronic Thin Films and Integrated Devices of China,University of Electronic Science and Technology of China；Power Semiconductor Research Institute,Beijing Institute of Smart Energy）.A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance[J].Journal of Semiconductors,2023,第5期 Zhao Zhang^1，2（State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences；Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences）.CMOS phase-locked loops in ISSCC 2023[J].Journal of Semiconductors,2023,第5期 Wenbin Zuo^1，2，Qihang Zhu¹，Yuyang Fu³，Yu Zhang¹，Tianqing Wan⁴，Yi Li^1，2，Ming Xu^1，2，Xiangshui Miao^1，2（Hubei Key Laboratory for Advanced Memories,School of Integrated Circuits,Huazhong University of Science and Technology；Hubei Yangtze Memory Laboratories；School of Microelectronics and Faculty of Physics and Electronics Science,Hubei University；Department of Applied Physics,The Hong Kong Polytechnic University）.Volatile threshold switching memristor: An emerging enabler in the AIoT era[J].Journal of Semiconductors,2023,第5期 Mengchi Liu，Yiwen Cheng，Yuee Xie，Yingcong Wei，Jinhui Xing，Yuanping Chen，Jing Xu（School of Physics and Electronic Engineering,Jiangsu University）.One-photo excitation pathway in 2D in-plane heterostructures for effective visible-light-driven photocatalytic degradation[J].Journal of Semiconductors,2023,第5期 Siyi Huang^1，2，3，Masao Ikeda^2，3，Minglong Zhang^1，2，3，Jianjun Zhu^2，3，Jianping Liu^1，2，3（School of Nano-Tech and Nano-Bionics,University of Science and Technology of China；Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences；Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences）.Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers[J].Journal of Semiconductors,2023,第5期 Xin Chao¹，Chengzhan Yan²，Huaping Zhao²，Zhijie Wang³，Yong Lei²（Institute of Nanochemistry and Nanobiology,School of Environmental and Chemical Engineering,Shanghai University；Fachgebiet Angewandte Nanophysik,Institut für Physik &IMN MacroNano,Technische Universität Ilmenau）.Micro-nano structural electrode architecture for high power energy storage[J].Journal of Semiconductors,2023,第5期 Wanwang Yang^1，2，Chenxi Yu^1，2，Haolin Li^1，2，Mengqi Fan^1，2，Xujin Song^1，2，Haili Ma^1，2，Zheng Zhou^1，2，Pengying Chang^1，3，Peng Huang^1，2，Fei Liu^1，2，Xiaoyan Liu^1，2，Jinfeng Kang^1，2（School of Integrated Circuits,Peking University；Beijing Advanced Innovation Center for Integrated Circuits；Key Laboratory of Optoelectronics Technology,Ministry of Education,Beijing University of Technology）.Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications[J].Journal of Semiconductors,2023,第5期 Kang An¹，Wenkai Zhong²，Chunguang Zhu¹，Feng Peng³，Lei Xu¹，Zhiwei Lin⁴，Lei Wang⁵，Cheng Zhou¹，Lei Ying¹，Ning Li¹，Fei Huang¹（Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices,South China University of Technology；Frontiers Science Center for Transformative Molecules,Center of Hydrogen Science,and School of Chemistry and Chemical Engineering,Shanghai Jiao Tong University；South China Institute of Collaborative Innovation；South China Advanced Institute for Soft Matter Science and Technology,School of Emergent Soft Matter,South China University of Technology；School of Light Industry and Engineering &State Key Laboratory of Pulp &Paper Engineering,South China University of Technology）.Optimizing the morphology of all-polymer solar cells for enhanced photovoltaic performance and thermal stability[J].Journal of Semiconductors,2023,第5期首页上一页 2 3 4 5 6 下一页尾页共有7页，转到页

期刊文章列表