期刊的影响因子--文章列表

期刊文章列表
Tang Wenbo，Han Xueli，Zhang Xiaodong，Li Botong，Ma Yongjian，Zhang Li，Chen Tiwei，Zhou Xin，Bian Chunxu，Hu Yu，Chen Duanyang，Qi Hongji，Zeng Zhongming，Zhang Baoshun.Homoepitaxial growth of(100)Si-doped beta-Ga_2O_3 films via MOCVD[J].半导体学报,2023,第6期 Genquan Han¹，Tiangui You²，Yibo Wang³，Zheng-Dong Luo¹，Xin Ou²，Yue Hao¹（School of Microelectronics, Xidian University；State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences；Suzhou institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences）.Heterogeneous integration technology for the thermal management of Ga₂O₃ power devices[J].Journal of Semiconductors,2023,第6期 Genquan Han¹，Shibing Long²，Yuhao Zhang³，Yibo Wang⁴，Zhongming Wei⁵（School of Microelectronics, Xidian University；School of Microelectronics, University of Science and Technology of China；Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Blacksburg；Platform for Characterization & Test, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences；Institute of Semiconductors, Chinese Academy of Sciences）.Preface to Special Issue on Towards High Performance Ga₂O₃ Electronics: Epitaxial Growth and Power Devices (Ⅰ)[J].Journal of Semiconductors,2023,第6期 Wang Yuefei，Han Yurui，Gao Chong，Li Bingsheng，Ma Jiangang，Xu Haiyang，Shen Aidong，Liu Yichun.Preparation and photodetection performance of high crystalline quality and large size beta-Ga_2O_3 microwires[J].半导体学报,2023,第6期 Wenbin Zuo^1，2，Qihang Zhu¹，Yuyang Fu³，Yu Zhang¹，Tianqing Wan⁴，Yi Li^1，2，Ming Xu^1，2，Xiangshui Miao^1，2（Hubei Key Laboratory for Advanced Memories,School of Integrated Circuits,Huazhong University of Science and Technology；Hubei Yangtze Memory Laboratories；School of Microelectronics and Faculty of Physics and Electronics Science,Hubei University；Department of Applied Physics,The Hong Kong Polytechnic University）.Volatile threshold switching memristor: An emerging enabler in the AIoT era[J].Journal of Semiconductors,2023,第5期 Siyi Huang^1，2，3，Masao Ikeda^2，3，Minglong Zhang^1，2，3，Jianjun Zhu^2，3，Jianping Liu^1，2，3（School of Nano-Tech and Nano-Bionics,University of Science and Technology of China；Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences；Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences）.Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers[J].Journal of Semiconductors,2023,第5期 Zhaohui Sun¹，Yang Feng¹，Peng Guo²，Zheng Dong¹，Junyu Zhang³，Jing Liu⁴，Xuepeng Zhan¹，Jixuan Wu¹，Jiezhi Chen¹（School of Information Science and Engineering (ISE),Shandong University；Shandong Sinochip Semiconductors Co.Ltd；Neumem Co.,Ltd；Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences）.Flash-based in-memory computing for stochastic computing in image edge detection[J].Journal of Semiconductors,2023,第5期 Mengchi Liu，Yiwen Cheng，Yuee Xie，Yingcong Wei，Jinhui Xing，Yuanping Chen，Jing Xu（School of Physics and Electronic Engineering,Jiangsu University）.One-photo excitation pathway in 2D in-plane heterostructures for effective visible-light-driven photocatalytic degradation[J].Journal of Semiconductors,2023,第5期 Zhao Zhang^1，2（State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences；Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences）.CMOS phase-locked loops in ISSCC 2023[J].Journal of Semiconductors,2023,第5期 Wanwang Yang^1，2，Chenxi Yu^1，2，Haolin Li^1，2，Mengqi Fan^1，2，Xujin Song^1，2，Haili Ma^1，2，Zheng Zhou^1，2，Pengying Chang^1，3，Peng Huang^1，2，Fei Liu^1，2，Xiaoyan Liu^1，2，Jinfeng Kang^1，2（School of Integrated Circuits,Peking University；Beijing Advanced Innovation Center for Integrated Circuits；Key Laboratory of Optoelectronics Technology,Ministry of Education,Beijing University of Technology）.Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications[J].Journal of Semiconductors,2023,第5期 Rongkai Lu¹，Siqin Li¹，Jianguo Lu^1，2，Bojing Lu¹，Ruqi Yang¹，Yangdan Lu¹，Wenyi Shao¹，Yi Zhao³，Liping Zhu^1，2，Fei Zhuge⁴，Zhizhen Ye^1，2（State Key Laboratory of Silicon Materials,Key Laboratory for Biomedical Engineering of Ministry of Education,School of Materials Science and Engineering,Zhejiang University；Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials,Institute of Wenzhou,Zhejiang University；Department of Electronic Science and Technology,College of Information Science and Electronic Engineering,Zhejiang University；Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences）.Homojunction structure amorphous oxide thin film transistors with ultra-high mobility[J].Journal of Semiconductors,2023,第5期 Xin Chao¹，Chengzhan Yan²，Huaping Zhao²，Zhijie Wang³，Yong Lei²（Institute of Nanochemistry and Nanobiology,School of Environmental and Chemical Engineering,Shanghai University；Fachgebiet Angewandte Nanophysik,Institut für Physik &IMN MacroNano,Technische Universität Ilmenau）.Micro-nano structural electrode architecture for high power energy storage[J].Journal of Semiconductors,2023,第5期 Chen Mu¹，Jiapei Zheng¹，Chixiao Chen^1，2（State Key Laboratory of Integrated Chips and Systems,Frontier Institute of Chips and Systems,Fudan University；Qizhi Institute）.Beyond convolutional neural networks computing: New trends on ISSCC 2023 machine learning chips[J].Journal of Semiconductors,2023,第5期 Moufu Kong¹，Zewei Hu¹，Ronghe Yan¹，Bo Yi¹，Bingke Zhang²，Hongqiang Yang¹（State Key Laboratory of Electronic Thin Films and Integrated Devices of China,University of Electronic Science and Technology of China；Power Semiconductor Research Institute,Beijing Institute of Smart Energy）.A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance[J].Journal of Semiconductors,2023,第5期 Jinbo Chen，Jie Yang，Mohamad Sawan（CenBRAIN Neurotech,School of Engineering,Westlake University）.Emerging trends of integrated-mixed-signal chips in ISSCC 2023[J].Journal of Semiconductors,2023,第5期 Kang An¹，Wenkai Zhong²，Chunguang Zhu¹，Feng Peng³，Lei Xu¹，Zhiwei Lin⁴，Lei Wang⁵，Cheng Zhou¹，Lei Ying¹，Ning Li¹，Fei Huang¹（Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices,South China University of Technology；Frontiers Science Center for Transformative Molecules,Center of Hydrogen Science,and School of Chemistry and Chemical Engineering,Shanghai Jiao Tong University；South China Institute of Collaborative Innovation；South China Advanced Institute for Soft Matter Science and Technology,School of Emergent Soft Matter,South China University of Technology；School of Light Industry and Engineering &State Key Laboratory of Pulp &Paper Engineering,South China University of Technology）.Optimizing the morphology of all-polymer solar cells for enhanced photovoltaic performance and thermal stability[J].Journal of Semiconductors,2023,第5期 Rui Huang¹，Zhiyong Wang²，Hui Li¹，Qing Wang¹，Yecai Guo¹（School of Electronic and Information Engineering,Wuxi University；Institute of Advanced Technology on Semiconductor Optics &Electronics,Institute of Laser Engineering,Beijing University of Technology）.Study of surface morphology in GaAs by hydrogen and helium implantation at elevated temperature[J].Journal of Semiconductors,2023,第5期 Ahmad Salmanogli（Engineering Faculty,Electrical and Electronic Department,Cankaya University）.Squeezed state generation using cryogenic InP HEMT nonlinearity[J].Journal of Semiconductors,2023,第5期 Haikun Jia（Institute of Mircoelectronics,Tsinghua University）.The VCOs in ISSCC 2023 set the new performance frontier of silicon-based oscillators[J].Journal of Semiconductors,2023,第5期 Xuebiao Deng，Huai Chen，Zhenyu Yang（MOE Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University）.T wo-dimensional silicon nanomaterials for optoelectronics[J].Journal of Semiconductors,2023,第4期 Shijiang He¹，Zidong Wang²，Zhijie Wang³，Yong Lei²（Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University；Fachgebiet Angewandte Nanophysik, Institut für Physik & IMN MacroNano, Technische Universität Ilmenau, Ilmenau；Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences）.Recent progress and future prospect of novel multi-ion storage devices[J].Journal of Semiconductors,2023,第4期 Ruoshi Peng，Shengrui Xu，Xiaomeng Fan，Hongchang Tao，Huake Su，Yuan Gao，Jincheng Zhang，and Yue Hao（Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi'dian University）.Application of nano-patterned InGaN fabricated by selfassembled Ni nano-masks in green InGaN/GaN multiple quantum wells[J].Journal of Semiconductors,2023,第4期 Qifeng Lin^1，2，Lili Wang^1，3（State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences；State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University）.L ayered double hydroxides as electrode materials for flexible energy storage devices[J].Journal of Semiconductors,2023,第4期 Yan Lu，Guigang Cai，Junwei Huang（State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, University of Macau）.Favorable basic cells for hybrid DC–DC converters[J].Journal of Semiconductors,2023,第4期 Yuhan Wu¹，Guangbo Chen²，Xiaonan Wu³，Lin Li⁴，Jinyu Yue¹，Yinyan Guan¹，Juan Hou⁵，Fanian Shi¹，Jiyan Liang¹（School of Environmental and Chemical Engineering, Shenyang University of Technology；Center for Advancing Electronics Dresden (cfaed), Department of Chemistry and Food Chemistry, Technische Universität Dresden；Department of Chemical Engineering, Hebei Petroleum University of Technology；Institute for Carbon Neutralization, College of Chemistry and Materials Engineering, Wenzhou University；College of Science/Key Laboratory of Ecophysics and Department of Physics, Shihezi University）.Research progress on vanadium oxides for potassium-ion batteries[J].Journal of Semiconductors,2023,第4期 Yuanfei Gao¹，Jia-Min Lai^2，3，Jun Zhang^2，3（Beijing Academy of Quantum Information Sciences；State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors；Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Chinese Academy of Sciences）.P honon-assisted upconversion photoluminescence of quantum emitters[J].Journal of Semiconductors,2023,第4期 Peng Feng^1，2，Nanjian Wu^1，2，Jian Liu^1，2，Liyuan Liu^1，2（State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences）.C MOS image sensors in ISSCC 2023[J].Journal of Semiconductors,2023,第4期首页上一页 2 3 4 5 6 下一页尾页共有6页，转到页

期刊文章列表