期刊的影响因子--文章列表

期刊文章列表
郑耀华，章国豪，郑瑞清，李思臻，林俊明，陈思弟（Guangdong University of Technology）.DESIGN OF BROADBAND CLASS-F POWER AMPLIFIER FOR MULTIBAND LTE HANDSETS APPLICATIONS[J].半导体学报(英文版),2015,第8期郭晓光，刘子源，高航，郭东明（Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education, Dalian University of Technology）.NANO-INDENTATION STUDY ON THE(001) FACE OF KDP CRYSTAL BASED ON SPH METHOD[J].半导体学报(英文版),2015,第8期 M.Benhaliliba¹，A.Tiburcio-Silver²，A.Avila-Garcia³，A.Tavira³，Y.S.Ocak⁴，M.S.Aida⁵，C.E.Benouis¹（Material Technology Department, Physics Faculty, USTO-MB University；ITT-DIE；Cinvestav-IPN, Department of Ingeniería Eléctrica-SEES；Dicle University, Education Faculty, Science Department；Thin Films & Plasma Lab, Physics Department, Mentouri University）.THE SPRAYED ZNO FILMS:NANOSTRUCTURES AND PHYSICAL PARAMETERS[J].半导体学报(英文版),2015,第8期袁配，吴远大，王玥，安俊明，胡雄伟（State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences）.MONOLITHIC INTEGRATION OF A 16-CHANNEL VMUX ON SOI PLATFORM[J].半导体学报(英文版),2015,第8期孙钰淳，程嘉，路益嘉，侯悦民，季林红（State Key Laboratory of Tribology, Department of Mechanical Engineering, Tsinghua University）.DESIGN SPACE OF ELECTROSTATIC CHUCK IN ETCHING CHAMBER[J].半导体学报(英文版),2015,第8期姚蔷¹，叶佐昌¹，喻文健²（Institute of Microelectronics, Tsinghua University；Department of Computer Science and Technology, Tsinghua University）.An efficient method for comprehensive modeling and parasitic extraction of cylindrical through-silicon vias in 3D ICs[J].半导体学报(英文版),2015,第8期杨涛，姜宇，李杰，郭江飞，陈华，韩荆宇，郭桂良，阎跃鹏（Institute of Microelectronics, Chinese Academy of Sciences）.A CMOS HIGH RESOLUTION, PROCESS/TEMPERATURE VARIATION TOLERANT RSSI FOR WIA-PA TRANSCEIVER[J].半导体学报(英文版),2015,第8期赵银女¹，闫金良²（Dean’s Office, Ludong University；School of Physics and Optoelectronic Engineering, Ludong University）.FIRST-PRINCIPLES STUDY OF N-TYPE TIN/FLUORINE CO-DOPED BETA-GALLIUM OXIDES[J].半导体学报(英文版),2015,第8期罗开武，王玲玲，李权，陈铜，许梁（Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics,Hunan University）.First-principles calculations of half-metallic ferromagnetism in zigzag boron-nitride nanoribbons jointed with a single Fe-chain[J].半导体学报(英文版),2015,第8期辛福彬^1，2，尹韬¹，吴其松¹，杨元龙^1，2，刘飞¹，杨海钢¹（System on Programmable Chip Research Department, Institute of Electronics, Chinese Academy of Sciences；University of Chinese Academy of Sciences）.A LOW POWER 12-BIT 1 MSPS SUCCESSIVE APPROXIMATION REGISTER ADC WITH AN IMPROVED SWITCHING PROCEDURE[J].半导体学报(英文版),2015,第8期杨军伟，冯士维，史冬，阳春辉（College of Electronic Information & Control Engineering, Beijing University of Technology）.THERMAL TIME-CONSTANT SPECTRUM EXTRACTION METHOD IN ALGAN/GAN HEMTS[J].半导体学报(英文版),2015,第8期李亚利¹，单淑萍²（College of Physics and Electronic Engineering, Jiangsu Normal University；College of Physics and Electromechanics, Fujian Longyan University）.PROPERTIES OF THE MAGNETOPOLARON IN A TRIANGULAR QUANTUM WELL[J].半导体学报(英文版),2015,第8期马何平，徐化，陈备，石寅（Institute of Semiconductors, Chinese Academy of Sciences）.AN ISM 2.4 GHZ LOW POWER LOW-IF RF RECEIVER FRONT-END[J].半导体学报(英文版),2015,第8期雷鑑铭，陈小梅（School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST)）.RUO₂/MNO₂ COMPOSITE MATERIALS FOR HIGH-PERFORMANCE SUPERCAPACITOR ELECTRODES[J].半导体学报(英文版),2015,第8期孟进^1，2，张德海¹，蒋长宏¹，赵鑫¹，黄健^1，2，闫大帅^1，2（Key Laboratory of Microwave Remote Sensing, Center for Space Science and Applied Research, Chinese Academy of Sciences；University of Chinese Academy of Sciences）.CRUCIAL PROBLEMS IN THE DESIGN OF A TERAHERTZ TRIPLER[J].半导体学报(英文版),2015,第8期 K Sivasankaran¹，P S Mallick²（School of Electronics Engineering, VIT University；School of Electrical Engineering, VIT University）.IMPACT OF PARAMETER FLUCTUATIONS ON RF STABILITY PERFORMANCE OF DG TUNNEL FET[J].半导体学报(英文版),2015,第8期 A.Bouhdjer，A.Attaf，H.Saidi，H.Bendjedidi，Y.Benkhetta，I.Bouhaf（Laboratory of Semiconductors Materials,University of Med Kheider）.Correlation between the structural, morphological, optical, and electrical properties of In₂O₃ thin films obtained by an ultrasonic spray CVD process[J].半导体学报(英文版),2015,第8期 Serdar Yilmaz^1，2（Mersin University Science and Arts Faculty Physics Department；Mersin University Advanced Technology Education, Research and Application Center）.THE GEOMETRIC RESISTIVITY CORRECTION FACTOR FOR SEVERAL GEOMETRICAL SAMPLES[J].半导体学报(英文版),2015,第8期周佳^1，2，许丽丽^1，2，李福乐^1，2，王志华^1，2（Institute of Microelectronics, Tsinghua University；Tsinghua National Laboratory for Information Science and Technology, Tsinghua University）.A 10-BIT 120-MS/S PIPELINED ADC WITH IMPROVED SWITCH AND LAYOUT SCALING STRATEGY[J].半导体学报(英文版),2015,第8期何滢，王德印，葛樊，刘丽（College of Instrumentation & Electrical Engineering，Jilin，Changchun，Jilin 130012，China；College of Instrumentation & Electrical Engineering，Jilin，Changchun，Jilin 130012，China；Construction Engineering College，Jilin University，Changchun，China；College of Physics，Jilin University，State Key Laboratory of，Changchun，Jilin 130012，China.）.SnO_2-doped alpha-Fe_2O_3 patulous microtubes for high performance formaldehyde sensing[J].半导体学报,2015,第8期段波，安卫静，周建伟，王帅（Institute of Microelectronics,Hebei University of Technology）.Effect of FA/O complexing agents and H₂O₂ on chemical mechanical polishing of ruthenium in weakly alkaline slurry[J].半导体学报(英文版),2015,第7期王硕，郑新年，杨浩，张海英（Institute of Microelectronics,Chinese Academy of Sciences）.A 0.75 dB NF LNA in GaAs pHEMT utilizing gate–drain capacitance and gradual inductor[J].半导体学报(英文版),2015,第7期栾晓东，刘玉岭，牛新环，王娟（Institute of Microelectronics,Hebei University of Technology）.Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer[J].半导体学报(英文版),2015,第7期谭鑫¹，吕元杰¹，顾国栋¹，王丽²，敦少博¹，宋旭波¹，郭红雨¹，尹甲运¹，蔡树军¹，冯志红¹（National Key Laboratory of Application Specific Integrated Circuit (ASIC),Hebei Semiconductor Research Institute；China National Defense Sciences Technology Information Center）.High performance AlGaN/GaN HEMTs with AlN/SiN_x passivation[J].半导体学报(英文版),2015,第7期 P.S.Shewale¹，Y.S.Yu^1，2（Convergence of IT Devices Institute,Dong-Eui University；Department of Radiological Science,Dong-Eui University）.Growth-temperature-dependent optical and acetone detection properties of ZnO thin films[J].半导体学报(英文版),2015,第7期李翔¹，赵德刚¹，江德生¹，陈平¹，刘宗顺¹，朱建军¹，侍铭¹，赵丹梅¹，刘炜¹，张书明²，杨辉^1，2（State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences；Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences）.Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching[J].半导体学报(英文版),2015,第7期石磊，冯士维，刘琨，张亚民（College of Electronic Information and Control Engineering,Beijing University of Technology）.Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress[J].半导体学报(英文版),2015,第7期彭波华^1，2，骆伟^1，2，赵继聪^1，2，袁泉^1，2，杨晋玲^1，2，杨富华¹（Institute of Semiconductors,Chinese Academy of Sciences；State Key Laboratory of Transducer Technology）.Frequency stability of an RF oscillator with an MEMS-based encapsulated resonator[J].半导体学报(英文版),2015,第7期首页上一页 3 4 5 6 7 下一页尾页共有13页，转到页

期刊文章列表