期刊的影响因子--文章列表

期刊文章列表
Chenyue Wang¹，Chuantian Zuo²，Qi Chen¹，Liming Ding²（China；China）.GIWAXS:A powerful tool for perovskite photovoltaics[J].Journal of Semiconductors,2021,第6期 Kyuhyun Cha，Kwangsoo Kim（Department of Electronic Engineering Sogang University Seoul 04107）.3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications[J].Journal of Semiconductors,2021,第6期 Jianbai，Xia（China）.Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method[J].Journal of Semiconductors,2021,第6期 Md.Omar Faruque，Rabiul Al Mahmud，Rakibul Hasan Sagor（Islamic University of Technology (IUT) Board Bazar Gazipur Gazipur 1704）.Heavily doped silicon:A potential replacement of conventional plasmonic metals[J].Journal of Semiconductors,2021,第6期 Xin，Lu（Department of Physics and Engineering Physics Tulane University New Orleans）.Magnetic quantum oscillation in a monolayer insulator[J].Journal of Semiconductors,2021,第6期 Mahmoud Shaban^1，2（Department of Electrical Engineering Faculty of Engineering Aswan University Aswan 81542）.Determination of trap density-of-states distribution of nitrogendoped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films[J].Journal of Semiconductors,2021,第6期 Bingcheng Yu^1，2，Chuantian Zuo³，Jiangjian Shi¹，Qingbo Meng^1，4，5，Liming Ding³（China；China；China；China；China）.Defect engineering on all-inorganic perovskite solar cells for high efficiency[J].Journal of Semiconductors,2021,第5期 Zhiqiang Ma¹，Zhong Wu¹，Yue Xu^1，2（China；China）.Compact SPAD pixels with fast and accurate photon counting in the analog domain[J].Journal of Semiconductors,2021,第5期 Xiaolong Cai^1，2，3，Chenglin Du^2，3，Zixuan Sun^2，3，Ran Ye^2，3，Haijun Liu²，Yu Zhang²，Xiangyang Duan²，Hai Lu¹（School of Electronic Science and EngineeringNanjing University；China；China）.Recent progress of physical failure analysis of GaN HEMTs[J].Journal of Semiconductors,2021,第5期 Longxing Su^1，2，Weixin Ouyang¹，Xiaosheng Fang¹（China；China）.Facile fabrication of heterostructure with p-BiOCl nanoflakes and n-ZnO thin film for UV photodetectors[J].Journal of Semiconductors,2021,第5期 Baoyi Ren¹，Chuantian Zuo²，Yaguang Sun¹，Liming Ding²（China；China）.Intramolecular spatial charge transfer enhances TADF efficiency[J].Journal of Semiconductors,2021,第5期 Enqing Zhang^1，2，Zhengkun Xing^1，2，Dian Wan^1，2，Haoran Gao^1，2，Yingdong Han^1，2，Yisheng Gao³，Haofeng Hu^1，2，Zhenzhou Cheng^1，2，4，Tiegen Liu^1，2（China；China；Department of Electrical EngineeringThe Hong Kong Polytechnic UniversityHong Kong；Department of ChemistryThe University of TokyoTokyo 113-0033）.S urface-enhanced Raman spectroscopy chips based on twodimensional materials beyond graphene[J].Journal of Semiconductors,2021,第5期 Yanbo Shang¹，Zhimin Fang^1，2，Wanpei Hu¹，Chuantian Zuo²，Bairu Li¹，Xingcheng Li¹，Mingtai Wang³，Liming Ding²，Shangfeng Yang¹（China；China；China）.Efficient and photostable CsPbI2Br solar cells realized by adding PM MA[J].Journal of Semiconductors,2021,第5期 Jinjing Huang，Jun Liu（China）.A complete small-signal HBT model including AC current crowding effect[J].Journal of Semiconductors,2021,第5期 Wei Pan¹，Yunfei Han¹，Zhenguo Wang¹，Qun Luo¹，Changqi Ma¹，Liming Ding²（China；China）.Over 1 cm² flexible organic solar cells[J].Journal of Semiconductors,2021,第5期 Li Zhang¹，Haitao Qi¹，Hongjuan Cheng¹，Yuezeng Shi¹，Zhanpin Lai¹，Muchang Luo²（China；China）.Morphology and crystalline property of an AlN single crystal grown on AlN seed[J].Journal of Semiconductors,2021,第5期 Hanrui Xiao^1，2，Chuantian Zuo²，Fangyang Liu¹，Liming Ding²（China；China）.Drop-coating produces efficient CsPbI₂Br solar cells[J].Journal of Semiconductors,2021,第5期 Xing Fan¹，Dechun Zou²，Liming Ding³（China；China；China）.Fiber-like solar cells[J].Journal of Semiconductors,2021,第5期 S.Dlimi¹，A.El kaaouachi^1，2，L.Limouny¹，B.A.Hammou²（Materials and Physicochemistry of the Atmosphere and Climate GroupFaculty of SciencesIbn Zohr UniversityBP 810680000 Agadir）.A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures[J].Journal of Semiconductors,2021,第5期 Arya Babu，Arya Vasanth，Shantikumar Nair，Mariyappan Shanmugam（India）.WO₃ passivation layer-coated nanostructured TiO₂:An efficient defect engineered photoelectrode for dye sensitized solar cell[J].Journal of Semiconductors,2021,第5期 Li Zhang，Haitao Qi，Hongjuan Cheng，Yuezeng Shi，Zhanpin Lai，Muchang Luo（China Electronics Technology Group Corp 46th Research Institute，Tianjin 300220，China；China Electronics Technology Group Corp 44th Research Institute，Chongqing 400060，China）.Morphology and crystalline property of an AIN single crystal grown on AIN seed[J].半导体学报（英文版）,2021,第5期 Hanrui Xiao，Chuantian Zuo，Fangyang Liu，Liming Ding（School of Metallurgy and Environment，Central South University，Changsha 410083，China；Center for Excellence in Nanoscience (CAS)，Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS)，National Center for Nanoscience and Technology，Beijing 100190，China；Center for Excellence in Nanoscience (CAS)，Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS)，National Center for Nanoscience and Technology，Beijing 100190，China；School of Metallurgy and Environment，Central South University，Changsha 410083，China）.Drop-coating produces efficient CsPbl2Br solar cells[J].半导体学报（英文版）,2021,第5期 Yanbo Shang，Zhimin Fang，Wanpei Hu，Chuantian Zuo，Bairu Li，Xingcheng Li，Mingtai Wang，Liming Ding，Shangfeng Yang（Hefei National Laboratory for Physical Sciences at Microscale，Key Laboratory of Materials for Energy Conversion (CAS)，Anhui Laboratory of Advanced Photon Science and Technology，Department of Materials Science and Engineering，University of Science and Technology of China，Hefei 230026，China；Hefei National Laboratory for Physical Sciences at Microscale，Key Laboratory of Materials for Energy Conversion (CAS)，Anhui Laboratory of Advanced Photon Science and Technology，Department of Materials Science and Engineering，University of Science and Technology of China，Hefei 230026，China；Center for Excellence in Nanoscience (CAS)，Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS)，National Center for Nanoscience and Technology，Beijing 100190，China；Center for Excellence in Nanoscience (CAS)，Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS)，National Center for Nanoscience and Technology，Beijing 100190，China；Institute of Solid State Physics，Chinese Academy of Sciences，Hefei 230031，China）.Efficient and photostable CsPbl2Br solar cells realized by adding PMMA[J].半导体学报（英文版）,2021,第5期 Chanchan Luo^1，2，3，Ruiying Zhang^1，2，3，Bocang Qiu⁴，Wei Wang⁵（China；China；China；China；China）.Waveguide external cavity narrow linewidth semiconductor lasers[J].Journal of Semiconductors,2021,第4期首页上一页 3 4 5 6 7 下一页尾页共有8页，转到页

期刊文章列表