期刊的影响因子--文章列表

期刊文章列表
Xin，Lu（Department of Physics and Engineering Physics Tulane University New Orleans）.Magnetic quantum oscillation in a monolayer insulator[J].Journal of Semiconductors,2021,第6期 Mahmoud Shaban^1，2（Department of Electrical Engineering Faculty of Engineering Aswan University Aswan 81542）.Determination of trap density-of-states distribution of nitrogendoped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films[J].Journal of Semiconductors,2021,第6期 Jinjing Huang，Jun Liu（China）.A complete small-signal HBT model including AC current crowding effect[J].Journal of Semiconductors,2021,第5期 Xiaolong Cai^1，2，3，Chenglin Du^2，3，Zixuan Sun^2，3，Ran Ye^2，3，Haijun Liu²，Yu Zhang²，Xiangyang Duan²，Hai Lu¹（School of Electronic Science and EngineeringNanjing University；China；China）.Recent progress of physical failure analysis of GaN HEMTs[J].Journal of Semiconductors,2021,第5期 Yanbo Shang¹，Zhimin Fang^1，2，Wanpei Hu¹，Chuantian Zuo²，Bairu Li¹，Xingcheng Li¹，Mingtai Wang³，Liming Ding²，Shangfeng Yang¹（China；China；China）.Efficient and photostable CsPbI2Br solar cells realized by adding PM MA[J].Journal of Semiconductors,2021,第5期 Enqing Zhang^1，2，Zhengkun Xing^1，2，Dian Wan^1，2，Haoran Gao^1，2，Yingdong Han^1，2，Yisheng Gao³，Haofeng Hu^1，2，Zhenzhou Cheng^1，2，4，Tiegen Liu^1，2（China；China；Department of Electrical EngineeringThe Hong Kong Polytechnic UniversityHong Kong；Department of ChemistryThe University of TokyoTokyo 113-0033）.S urface-enhanced Raman spectroscopy chips based on twodimensional materials beyond graphene[J].Journal of Semiconductors,2021,第5期 Longxing Su^1，2，Weixin Ouyang¹，Xiaosheng Fang¹（China；China）.Facile fabrication of heterostructure with p-BiOCl nanoflakes and n-ZnO thin film for UV photodetectors[J].Journal of Semiconductors,2021,第5期 Zhiqiang Ma¹，Zhong Wu¹，Yue Xu^1，2（China；China）.Compact SPAD pixels with fast and accurate photon counting in the analog domain[J].Journal of Semiconductors,2021,第5期 Bingcheng Yu^1，2，Chuantian Zuo³，Jiangjian Shi¹，Qingbo Meng^1，4，5，Liming Ding³（China；China；China；China；China）.Defect engineering on all-inorganic perovskite solar cells for high efficiency[J].Journal of Semiconductors,2021,第5期 Wei Pan¹，Yunfei Han¹，Zhenguo Wang¹，Qun Luo¹，Changqi Ma¹，Liming Ding²（China；China）.Over 1 cm² flexible organic solar cells[J].Journal of Semiconductors,2021,第5期 Hanrui Xiao^1，2，Chuantian Zuo²，Fangyang Liu¹，Liming Ding²（China；China）.Drop-coating produces efficient CsPbI₂Br solar cells[J].Journal of Semiconductors,2021,第5期 Baoyi Ren¹，Chuantian Zuo²，Yaguang Sun¹，Liming Ding²（China；China）.Intramolecular spatial charge transfer enhances TADF efficiency[J].Journal of Semiconductors,2021,第5期 Li Zhang¹，Haitao Qi¹，Hongjuan Cheng¹，Yuezeng Shi¹，Zhanpin Lai¹，Muchang Luo²（China；China）.Morphology and crystalline property of an AlN single crystal grown on AlN seed[J].Journal of Semiconductors,2021,第5期 Xing Fan¹，Dechun Zou²，Liming Ding³（China；China；China）.Fiber-like solar cells[J].Journal of Semiconductors,2021,第5期 S.Dlimi¹，A.El kaaouachi^1，2，L.Limouny¹，B.A.Hammou²（Materials and Physicochemistry of the Atmosphere and Climate GroupFaculty of SciencesIbn Zohr UniversityBP 810680000 Agadir）.A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole system at low temperatures[J].Journal of Semiconductors,2021,第5期 Arya Babu，Arya Vasanth，Shantikumar Nair，Mariyappan Shanmugam（India）.WO₃ passivation layer-coated nanostructured TiO₂:An efficient defect engineered photoelectrode for dye sensitized solar cell[J].Journal of Semiconductors,2021,第5期 Chanchan Luo^1，2，3，Ruiying Zhang^1，2，3，Bocang Qiu⁴，Wei Wang⁵（China；China；China；China；China）.Waveguide external cavity narrow linewidth semiconductor lasers[J].Journal of Semiconductors,2021,第4期 Lianping Hou，Song Tang，John H. Marsh（James Watt School of Engineering University of Glasgow Glasgow G12 8QQ）.Monolithic DWDM source with precise channel spacing[J].Journal of Semiconductors,2021,第4期 Yuhua Li^1，2，Xiang Wang³，Roy Davidson³，Brent E.Little⁴，Sai Tak Chu²（China；China；China；China）.F our-wave mixing in silicon-nanocrystal embedded high-index doped silica micro-ring resonator[J].Journal of Semiconductors,2021,第4期 Mengke Wang，Shangjian Zhang，Zhao Liu，Xuyan Zhang，Yutong He，Yangxue Ma，Yali Zhang，Zhiyao Zhang，Yong Liu（China）.High-frequency characterization of high-speed modulators and photodetectors in a link with low-speed photonic sampling[J].Journal of Semiconductors,2021,第4期 Shuai Yuan，Changran Hu，An Pan，Yuedi Ding，Xuanhao Wang，Zhicheng Qu，Junjie Wei，Yuheng Liu，Cheng Zeng，Jinsong Xia（China）.P hotonic devices based on thin-film lithium niobate on insulator[J].Journal of Semiconductors,2021,第4期 Hao Sun，Mostafa Khalil，Zifei Wang，Lawrence R. Chen（Department of Electrical and Computer Engineering McGill University Montreal. QC H3A 0E9）.Recent progress in integrated electro-optic frequency comb generation[J].Journal of Semiconductors,2021,第4期 Jianou Huang¹，Chao Li¹，Rongguo Lu²，Lianyan Li³，Zizheng Cao¹（China；China）.Beyond the 100 Gbaud directly modulated laser for short reach applications[J].Journal of Semiconductors,2021,第4期 Songtao Liu¹，Akhilesh Khope²（Microsoft Corporation One Microsoft Way Redmond Washington 98052）.L atest advances in high-performance light sources and optical amplifiers on silicon[J].Journal of Semiconductors,2021,第4期首页上一页 3 4 5 6 7 下一页尾页共有7页，转到页

期刊文章列表