期刊的影响因子--文章列表

期刊文章列表
Luyao Mei^1，2，Haoran Mu¹，Lu Zhu²，Shenghuang Lin¹，Lixiu Zhang³，Liming Ding³（Songshan Lake Materials Laboratory；Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems School of Microelectronics Science and Technology Sun Yat-sen University；Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology）.Frontier applications of perovskites beyond photovoltaics[J].Journal of Semiconductors,2022,第4期 Peili Zhao¹，Lei Li¹，Guoxujia Chen¹，Xiaoxi Guan¹，Ying Zhang¹，Weiwei Meng¹，Ligong Zhao¹，Kaixuan Li¹，Renhui Jiang¹，Shuangfeng Jia¹，He Zheng^1，2，3，Jianbo Wang¹（School of Physics and Technology Center for Electron Microscopy MOE Key Laboratory of Artificial Micro- and Nano-structuresand Institute for Advanced Studies Wuhan University；Suzhou Institute of Wuhan University；Wuhan University Shenzhen Research Institute）.Structural evolution of low-dimensional metal oxide semiconductors under external stress[J].Journal of Semiconductors,2022,第4期 Yaxin Wang¹，Xin Zhang^1，2，Zejiao Shi¹，Lixiu Zhang³，Anran Yu¹，Yiqiang Zhan¹，Liming Ding³（Center for Micro-Nano Systems School of Information Science and Technology Fudan University；Academy for Engineering & Technology Fudan University；Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology）.Stabilizing α-phase FAPbI₃ solar cells[J].Journal of Semiconductors,2022,第4期 Luying Li¹，Yongfa Cheng¹，Zunyu Liu¹，Shuwen Yan¹，Li Li¹，Jianbo Wang²，Lei Zhang³，Yihua Gao¹（Center for Nanoscale Characterization & Devices Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology；School of Physics and Technology Center for Electron Microscopy MOE Key Laboratory of Artificial Micro- and Nano-Structuresand the Institute for Advanced Studies Wuhan University；Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials School of Materials Science and Engineering Hubei University）.Study of structure-property relationship of semiconductor nanomaterials by off-axis electron holography[J].Journal of Semiconductors,2022,第4期 Xiaomei Wu，Xiaoxing Ke，Manling Sui（Faculty of Materials and Manufacturing Beijing University of Technology）.Recent progress on advanced transmission electron microscopy characterization for halide perovskite semiconductors[J].Journal of Semiconductors,2022,第4期 Zhen Fang^1，2，Yao Liu³，Chengyi Song^1，2，Peng Tao^1，2，Wen Shang^1，2，Tao Deng^1，2，Xiaoqin Zeng³，Jianbo Wu^{1，2，4，5}（State Key Laboratory of Metal Matrix Composites School of Materials Science and Engineering Shanghai Jiao Tong University；Center of Hydrogen Science Shanghai Jiao Tong University；National Engineering Research Center of Light Alloy Net Forming Shanghai Jiao Tong University；Materials Genome Initiative Center Shanghai Jiao Tong University；Future Material Innovation Center Zhangjiang Institute for Advanced Study Shanghai Jiao Tong University）.In-situ monitoring of dynamic behavior of catalyst materials and reaction intermediates in semiconductor catalytic processes[J].Journal of Semiconductors,2022,第4期 Yong Zhang¹，David J.Smith²（Electrical and Computer Engineering Department University of North Carolina at Charlotte Charlotte NC 28223；Department of Physics Arizona State University Tempe Arizona 85287）.Comprehensive, in operando, and correlative investigation of defects and their impact on device performance[J].Journal of Semiconductors,2022,第4期 Wenrong Liu，Xinyang Li，Changwen Zhang，Shishen Yan（School of Physics and Technology Spintronics Institute University of Jinan）.Janus VXY monolayers with tunable large Berry curvature[J].Journal of Semiconductors,2022,第4期 Lin Xie¹，Lixiu Zhang²，Yong Hua¹，Liming Ding²（Yunnan Key Laboratory for Micro/Nano Materials & Technology School of Materials and Energy Yunnan University；Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology）.Inorganic electron-transport materials in perovskite solar cells[J].Journal of Semiconductors,2022,第4期 Xiaoxing Ke¹，Yong Zhang²（Faculty of Materials and Manufacturing Beijing University of Technology；Electrical and Computer Engineering Department University of North Carolina at Charlotte Charlotte NC 28223）.Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices[J].Journal of Semiconductors,2022,第4期 Wang Yaxin，Zhang Xin，Shi Zejiao，Zhang Lixiu，Yu Anran，Zhan Yiqiang，Ding Liming.Stabilizing alpha-phase FAPbI_3 solar cells[J].半导体学报,2022,第4期 Lixiu Zhang^1，2，Xiyan Pan^1，2，Ling Liu^1，2，Liming Ding¹（Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology；University of Chinese Academy of Sciences）.Star perovskite materials[J].Journal of Semiconductors,2022,第3期 Zhengwu Shu，Lei Jiang，Xingxing Hu，YueXu（College of Electronic and Optical Engineering & College of Microelectronics Nanjing University of Posts and Telecommunications）.An integrated front-end vertical hall magnetic sensor fabricated in 0.18 μm low-voltage CMOS technology[J].Journal of Semiconductors,2022,第3期 Tian Tian¹，Meifang Yang¹，Jianyu Yang¹，Wuqiang Wu¹，Liming Ding²（Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE) Lehn Institute of Functional Materials School of Chemistry Sun Yat-sen University；Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology）.Stabilizing black-phase CsPbI₃ under over 70% humidity[J].Journal of Semiconductors,2022,第3期 Sagar Vikal¹，Yogendra K.Gautam¹，Anit K.Ambedkar¹，Durvesh Gautam¹，Jyoti Singh²，Dharmendra Pratap²，Ashwani Kumar³，Sanjay Kumar⁴，Meenal Gupta⁵，Beer Pal Singh¹（Smart Materials and Sensor Laboratory Department of Physics Ch. Charan Singh University Meerut；Department of Genetics and Plant Breeding Ch. Charan Singh University Meerut；Nanoscience Laboratory Institute Instrumentation Centre IIT Roorkee；Department of Physics University of Rajasthan；Department of Physics SBSR Sharda University Greater Noida Uttar Pradesh）.Structural, optical and antimicrobial properties of pure and Agdoped ZnO nanostructures[J].Journal of Semiconductors,2022,第3期 Jiamin Cao¹，Lifei Yi¹，Liming Ding²（Key Laboratory of Theoretical Organic Chemistry and Functional Molecule (MoE) School of Chemistry and Chemical EngineeringHunan University of Science and Technology；Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology）.T he origin and evolution of Y6 structure[J].Journal of Semiconductors,2022,第3期 Zhiting Lin，Zhongzhen Tong，Jin Zhang，Fangming Wang，Tian Xu，Yue Zhao，Xiulong Wu，Chunyu Peng，Wenjuan Lu，Qiang Zhao，Junning Chen（School of Integrated Circuits Anhui University）.A review on SRAM-based computing in-memory: Circuits,functions, and applications[J].Journal of Semiconductors,2022,第3期 Yi Hu^1，2，Junchuan Liang^1，2，Lixiu Zhang³，Zhong Jin^1，2，Liming Ding³（Key Laboratory of Mesoscopic Chemistry (MOE) School of Chemistry and Chemical Engineering Nanjing University；Shenzhen Research Institute of Nanjing University；Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology）.2D arsenenes[J].Journal of Semiconductors,2022,第3期 Zhe Yin¹，Min Hu¹，Jun Liu^2，3，Hao Fu¹，Zhijie Wang^2，3，4，Aiwei Tang¹（Key Laboratory of Luminescence and Optical Information Ministry of Education School of Science Beijing Jiaotong University；Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences；Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors Chinese Academy of Sciences；College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences）.T unable crystal structure of Cu–Zn–Sn–S nanocrystals for improving photocatalytic hydrogen evolution enabled by copper element regulation[J].Journal of Semiconductors,2022,第3期 Hua Fan^1，2，Huichao Yue¹，Jiangmin Mao¹，Ting Peng³，Siming Zuo⁴，Quanyuan Feng⁵，Qi Wei⁶，Hadi Heidari²（State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China；Chengdu HiWafer Semiconductor Co. Ltd.；James Watt School of Engineering University of Glasgow G12 8QQ Glasgow；Southwest Jiaotong University；Department of Precision Instrument Tsinghua University；Institute of Electronic and Information Engineering of UESTC in Guangdong University of Electronic Science and Technology of China）.Modelling and fabrication of wide temperature range Al_0.24Ga_0.76As/GaAs Hall magnetic sensors[J].Journal of Semiconductors,2022,第3期 Lan Bi^1，2，Yixu Yao^1，2，Qimeng Jiang^1，2，Sen Huang^1，2，Xinhua Wang^1，2，Hao Jin^1，2，Xinyue Dai^1，2，Zhengyuan Xu¹，Jie Fan^1，2，Haibo Yin^1，2，Ke Wei^1，2，Xinyu Liu^1，2（High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences；Institute of Microelectronics University of Chinese Academy of Sciences）.I nstability of parasitic capacitance in T-shape-gate enhancementmode AlGaN/GaN MIS-HEMTs[J].Journal of Semiconductors,2022,第3期 Wensi Cai，Haiyun Li，Mengchao Li，Zhigang Zang（Key Laboratory of Optoelectronic Technology & System (Ministry of Education) Chongqing University）.Performance enhancement of solution-processed InZnO thin-film transistors by Al doping and surface passivation[J].Journal of Semiconductors,2022,第3期 Chao Fan，Yahua Ran，Liqun Ye（Chengdu CORPRO technology Co. Ltd.）.Ultra wideband CMOS digital T-type attenuator with low phase errors[J].Journal of Semiconductors,2022,第3期 Shu Zhengwu，Jiang Lei，Hu Xingxing，Xu Yue.An integrated front-end vertical hall magnetic sensor fabricated in 0.18 mum low-voltage CMOS technology[J].半导体学报,2022,第3期 Kunal B.Modi¹，Pooja Y.Raval²，Dolly J.Parekh¹，Shrey K.Modi³，Niketa P.Joshi¹，Akshay R.Makadiya¹，Nimish H.Vasoya⁴，Utpal S.Joshi⁵（Department of Physics Saurashtra University；Department of Physics C. U. Shah University Wadhwan City；Department of Environment Engineering L. D. Engineering College；Department of Balbhavan Children´s University Sector – 20；Department of Physics University School of Sciences Gujarat University）.Fe³⁺-substitution effect on the thermal variation of J–E characteristics and DC resistivity of quadruple perovskite CaCu₃Ti₄O₁₂[J].Journal of Semiconductors,2022,第3期 Tian Tian，Meifang Yang，Jianyu Yang，Wuqiang Wu，Liming Ding（Key Laboratory of Bioinorganic and Synthetic Chemistry(MoE)，Lehn Institute of Functional Materials，School of Chemistry，Sun Yat-sen University，Guangzhou 510006，China；Center for Excellence in Nanoscience(CAS)，Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)，National Center for Nanoscience and Technology，Beijing 100190，China）.Stabilizing black-phase CsPbl3 under over 70％humidity[J].半导体学报(英文版),2022,第3期首页上一页 3 4 5 6 7 下一页尾页共有7页，转到页

期刊文章列表