期刊的影响因子--文章列表

期刊文章列表
Kang An¹，Wenkai Zhong²，Chunguang Zhu¹，Feng Peng³，Lei Xu¹，Zhiwei Lin⁴，Lei Wang⁵，Cheng Zhou¹，Lei Ying¹，Ning Li¹，Fei Huang¹（Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of Luminescent Materials and Devices,South China University of Technology；Frontiers Science Center for Transformative Molecules,Center of Hydrogen Science,and School of Chemistry and Chemical Engineering,Shanghai Jiao Tong University；South China Institute of Collaborative Innovation；South China Advanced Institute for Soft Matter Science and Technology,School of Emergent Soft Matter,South China University of Technology；School of Light Industry and Engineering &State Key Laboratory of Pulp &Paper Engineering,South China University of Technology）.Optimizing the morphology of all-polymer solar cells for enhanced photovoltaic performance and thermal stability[J].Journal of Semiconductors,2023,第5期 Jinbo Chen，Jie Yang，Mohamad Sawan（CenBRAIN Neurotech,School of Engineering,Westlake University）.Emerging trends of integrated-mixed-signal chips in ISSCC 2023[J].Journal of Semiconductors,2023,第5期 Haikun Jia（Institute of Mircoelectronics,Tsinghua University）.The VCOs in ISSCC 2023 set the new performance frontier of silicon-based oscillators[J].Journal of Semiconductors,2023,第5期 Ahmad Salmanogli（Engineering Faculty,Electrical and Electronic Department,Cankaya University）.Squeezed state generation using cryogenic InP HEMT nonlinearity[J].Journal of Semiconductors,2023,第5期 Qifeng Lin^1，2，Lili Wang^1，3（State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences；State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University）.L ayered double hydroxides as electrode materials for flexible energy storage devices[J].Journal of Semiconductors,2023,第4期 Yuanfei Gao¹，Jia-Min Lai^2，3，Jun Zhang^2，3（Beijing Academy of Quantum Information Sciences；State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors；Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Chinese Academy of Sciences）.P honon-assisted upconversion photoluminescence of quantum emitters[J].Journal of Semiconductors,2023,第4期 Xuebiao Deng，Huai Chen，Zhenyu Yang（MOE Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University）.T wo-dimensional silicon nanomaterials for optoelectronics[J].Journal of Semiconductors,2023,第4期 Yan Lu，Guigang Cai，Junwei Huang（State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, University of Macau）.Favorable basic cells for hybrid DC–DC converters[J].Journal of Semiconductors,2023,第4期 Ruoshi Peng，Shengrui Xu，Xiaomeng Fan，Hongchang Tao，Huake Su，Yuan Gao，Jincheng Zhang，and Yue Hao（Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi'dian University）.Application of nano-patterned InGaN fabricated by selfassembled Ni nano-masks in green InGaN/GaN multiple quantum wells[J].Journal of Semiconductors,2023,第4期 Shijiang He¹，Zidong Wang²，Zhijie Wang³，Yong Lei²（Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University；Fachgebiet Angewandte Nanophysik, Institut für Physik & IMN MacroNano, Technische Universität Ilmenau, Ilmenau；Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences）.Recent progress and future prospect of novel multi-ion storage devices[J].Journal of Semiconductors,2023,第4期 Yuhan Wu¹，Guangbo Chen²，Xiaonan Wu³，Lin Li⁴，Jinyu Yue¹，Yinyan Guan¹，Juan Hou⁵，Fanian Shi¹，Jiyan Liang¹（School of Environmental and Chemical Engineering, Shenyang University of Technology；Center for Advancing Electronics Dresden (cfaed), Department of Chemistry and Food Chemistry, Technische Universität Dresden；Department of Chemical Engineering, Hebei Petroleum University of Technology；Institute for Carbon Neutralization, College of Chemistry and Materials Engineering, Wenzhou University；College of Science/Key Laboratory of Ecophysics and Department of Physics, Shihezi University）.Research progress on vanadium oxides for potassium-ion batteries[J].Journal of Semiconductors,2023,第4期 Shaolong Yan，Jianliang Huang，Ting Xue，Yanhua Zhang，Wenquan Ma（The Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences；Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences）.L ong wavelength interband cascade photodetector with type II InAs/GaSb superlattice absorber[J].Journal of Semiconductors,2023,第4期 Junhui Yuan¹，Kanhao Xue^1，2，Xiangshui Miao^1，2，Lei Ye^1，2（School of Integrated Circuits, School of Optical and Electronic Information, Huazhong University of Science and Technology；Hubei Yangtze Memory Laboratories）.A family of flexible two-dimensional semiconductors: MgMX₂Y₆(M = Ti/Zr/Hf; X = Si/Ge; Y = S/Se/Te)[J].Journal of Semiconductors,2023,第4期 Chaowei Si¹，Yingchun Fu^2，3，Guowei Han¹，Yongmei Zhao^1，4，Jin Ning^1，4，Zhenyu Wei^1，4，Fuhua Yang^1，4（Institute of Semiconductors, Chinese Academy of Sciences；Beijing Smart-chip Microelectronics Technology Co., Ltd；Zhongguancun Xinhaizeyou Technology Co., Ltd；Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences）.A new DRIE cut-off material in SOG MEMS process[J].Journal of Semiconductors,2023,第4期 Peng Feng^1，2，Nanjian Wu^1，2，Jian Liu^1，2，Liyuan Liu^1，2（State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences）.C MOS image sensors in ISSCC 2023[J].Journal of Semiconductors,2023,第4期 Ashish Kumar^1，2，Jayjit Mukherjee³，D.S.Rawal³，K.Asokan²，D.Kanjilal²（Department of Physics, School of Natural Science, University of Petroleum and Energy Studies, Bidholi；Inter University Accelerator Centre, Aruna Asaf Ali Road, Vasantkunj；Solid State Physics Laboratory, DRDO, Timarpur）.Trap analysis on Pt-AlGaN/GaN Schottky barrier diode through deep level transient spectroscopy[J].Journal of Semiconductors,2023,第4期 Weiyan Zhang^1，2，Tao Yu²，Zhifeng Zhu¹，Binghan Li²（School of Information Science and Technology, ShanghaiTech University；Shanghai Huahong Grace Semiconductor Manufacturing Corporation）.Temperature-insensitive reading of a flash memory cell[J].Journal of Semiconductors,2023,第4期 Dahai Wei（State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences）.T he room temperature ferromagnetism in highly strained twodimensional magnetic semiconductors[J].Journal of Semiconductors,2023,第4期 Yun Yin，Hongtao Xu（State Key Laboratory of Integrated Chips and Systems, Department of Microelectronics, Fudan University）.Digital-intensive RFIC design techniques for transmitters in ISSCC 2023[J].Journal of Semiconductors,2023,第4期 Shaolong Yan^1，2，Jianliang Huang^1，2，Ting Xue^1，2，Yanhua Zhang^1，2，Wenquan Ma^1，2（The Key Laboratory of Semiconductor Materials Science，Institute of Semiconductors，Chinese Academy of Sciences；Center of Materials Science and Optoelectronics Engineering，University of Chinese Academy of Sciences）.Long wavelength interband cascade photodetector with type Ⅱ InAs/GaSb superlattice absorber[J].半导体学报(英文版),2023,第4期 Ruiyang Yin^1，2，Linlin Li^1，3，Lili Wang^1，3，Zheng Lou^1，3（State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences；Department of Materials Science and Engineering, College of Engineering, Peking University）.Self-healing Au/PVDF-HFP composite ionic gel for flexible underwater pressure sensor[J].Journal of Semiconductors,2023,第3期 Shuang Yu^1，2，Yi Peng^1，2，Guoqiang Zhao^1，2，Jianfa Zhao^1，2，Xiancheng Wang^1，2，Jun Zhang^1，2，Zheng Deng^1，2，Changqing Jin^1，2（Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences；School of Physics, University of Chinese Academy of Sciences）.Colossal negative magnetoresistance in spin glass Na(Zn,Mn)Sb[J].Journal of Semiconductors,2023,第3期 Kaour Selma^1，2，Benkara Salima^3，4，Bouabida Seddik³，Rechem Djamil^1，3，Hadjeris Lazhar^1，2（Laboratory of Materials and Structure of Electromechanical Systems and their Reliability Oum El Bouaghi University AlgeriaLaboratory of Materials and Structure of Electromechanical Systems and their Reliability Oum El Bouaghi University Algeria；Faculty of Exact Sciences and Natural and Life Sciences Oum El Bouaghi University AlgeriaFaculty of Exact Sciences and Natural and Life Sciences Oum El Bouaghi University Algeria；Electrical Engineering Department Oum El Bouaghi University AlgeriaElectrical Engineering Department Oum El Bouaghi University Algeria；Laboratory of Active Components and Materials Oum El Bouaghi University AlgeriaLaboratory of Active Components and Materials Oum El Bouaghi University Algeria）.I nvestigation of UV photosensor properties of Al-doped SnO₂ thin films deposited by sol-gel dip-coating method[J].Journal of Semiconductors,2023,第3期 Liqiang Zhang，Ziqian Zhou，Xiaosong Hu，Liaoyong Wen（Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University）.T he recent progress of laser-induced graphene based device applications[J].Journal of Semiconductors,2023,第3期 Shijie Liang¹，Weiwei Li¹，Liming Ding²（Beijing Advanced Innovation Center for Soft Matter Science and Engineering, State Key Laboratory of Organic–Inorganic Composites,Beijing University of Chemical Technology；Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology）.Single-component organic solar cells[J].Journal of Semiconductors,2023,第3期 Kexin Li，Gentian Yue，Furui Tan（Henan Key Laboratory of Photovoltaic Materials and Laboratory of Low-Dimensional Materials Science, Henan University）.A binder-free CF\|PANI composite electrode with excellent capacitance for asymmetric supercapacitors[J].Journal of Semiconductors,2023,第3期 Chengfang Liu，He Lin，Dongzhou Ji，Qun Yu，Shuoguo Chen，Ziming Guo，Qian Luo，Xu Liu，and Wenyong Lai（State Key Laboratory for Organic Electronics and Information Displays (SKLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications）.Wavelength-tunable organic semiconductor lasers based on elastic distributed feedback gratings[J].Journal of Semiconductors,2023,第3期 Zhimin Ji^1，2，Zhigang Song¹（State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences；Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences）.Exciton radiative lifetime in CdSe quantum dots[J].Journal of Semiconductors,2023,第3期首页上一页 3 4 5 6 7 下一页尾页共有7页，转到页

期刊文章列表