期刊的影响因子--文章列表

期刊文章列表
穆林枫^1，2，张文栋^1，2，何常德^1，2，张睿^1，2，宋金龙^1，2，薛晨阳^1，2（Key Laboratory of Instrumentation Science & Dynamic Measurement,Ministry of Education,North University of China；Key Laboratory of Science and Technology on Electronic Test & Measurement,North University of China）.Design and test of a capacitance detection circuit based on a transimpedance amplifier[J].半导体学报(英文版),2015,第7期 P. S. Shewale，Y. S. Yu（Convergence of IT Devices Institute,Dong-Eui University,Busan 614-714,Korea；Department of Radiological Science,Dong-Eui University,Busan 614-714,Korea）.氧化锌薄膜生长温度依赖性光学和丙酮检测性能[J].半导体学报(英文版),2015,第7期康昆勇，甘国友，严继康，易建宏，张家敏，杜景红，赵文超，荣雪全（Faculty of Materials Science and Engineering,Kunming University of Science and Technology,Kunming 650093,China；Key Laboratory of Advance Materials of Yunnan Province,Kunming 650093,China；Key Laboratory of Advance Materials of Precious-Nonferrous Metals,Ministry of Education,Kunming 650093,China）.对ge-geo2共掺杂对tio2-v2o5-y2o3压敏陶瓷的非欧姆特性的影响[J].半导体学报(英文版),2015,第7期汪鹏君，张学龙，张跃军，李建瑞（Institute of Circuits and Systems,Ningbo University）.Design of a reliable PUF circuit based on R–2R ladder digital-to-analog convertor[J].半导体学报(英文版),2015,第7期宋奇伟¹，毛陆虹¹，谢生¹，康玉琢²（School of Electronic Information Engineering,Tianjin University；Inspur (Beijing) Electronic Information Industry Co.Ltd）.Novel pre-equalization transimpedance amplifier for 10 Gb/s optical interconnects[J].半导体学报(英文版),2015,第7期穆林枫，张文栋，何常德，张睿，宋金龙，薛晨阳（Key Laboratory of Instrumentation Science & Dynamic Measurement,Ministry of Education,North University of China,Taiyuan 030051,China；Key Laboratory of Science and Technology on Electronic Test & Measurement,North University of China,Taiyuan 030051,China）.与基于跨阻放大器的电容检测电路设计[J].半导体学报(英文版),2015,第7期栾晓东，刘玉岭，牛新环，王娟（Institute of Microelectronics,Hebei University of Technology,Tianjin 300130,China）.对弱碱性阻挡层抛光液无BTA和氧化剂的发展机制[J].半导体学报(英文版),2015,第7期石磊，冯士维，刘琨，张亚民（College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China）.对自我变化的参数和特性在AlGaN/GaN高电子迁移率晶体管的电压应力，后一步的机制[J].半导体学报(英文版),2015,第7期李翔，赵德刚，江德生，陈平，刘宗顺，朱建军，侍铭，赵丹梅，刘炜，张书明，杨辉（State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China；Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China）.湿化学腐蚀法制备808纳米砷化镓基激光二极管的脊形波导[J].半导体学报(英文版),2015,第7期王硕，郑新年，杨浩，张海英（Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China）.0.75分贝NF LNA GaAs PHEMT器件栅漏电容和电感，利用逐步[J].半导体学报(英文版),2015,第7期宋奇伟，毛陆虹，谢生，康玉琢（School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China；Inspur (Beijing) Electronic Information Industry Co. Ltd,Beijing 100085,China）.10 GB / s的光新的预均衡的跨阻放大器的互连[J].半导体学报(英文版),2015,第7期杨乐，叶甜春，吴斌，张瑞齐（Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China）.LTE Turbo译码器设计[J].半导体学报(英文版),2015,第7期李志超¹，刘云涛²，陈敏¹，肖璟博¹，陈杰¹（Institute of Microelectronics,Chinese Academy of Sciences；College of Information and Communication Engineering,Harbin Engineering University）.A CMOS analog front-end chip for amperometric electrochemical sensors[J].半导体学报(英文版),2015,第7期陶东言，程雨，刘京明，苏杰，刘彤，杨凤云，王凤华，曹可慰，董志远，赵有文（Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences）.Chemical and electrical properties of（NH₄）₂S passivated GaSb surface[J].半导体学报(英文版),2015,第7期代晓艳^1，2，史成武^1，2，张艳茹^1，2，吴妮^1，2（School of Chemistry and Chemical Engineering,Hefei University of Technology；Key Laboratory of Novel Thin Film Solar Cells,Chinese Academy of Sciences）.Hydrolysis preparation of the compact TiO₂ layer using metastable TiCl₄ isopropanol/water solution for inorganic–organic hybrid heterojunction perovskite solar cells[J].半导体学报(英文版),2015,第7期林体元，庞磊，王鑫华，黄森，刘果果，袁婷婷，刘新宇（Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences）.Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications[J].半导体学报(英文版),2015,第7期康昆勇^1，2，3，甘国友^1，2，3，严继康^1，2，3，易建宏^1，2，3，张家敏^1，2，3，杜景红^1，2，3，赵文超^1，2，3，荣雪全^1，2，3（Faculty of Materials Science and Engineering,Kunming University of Science and Technology；Key Laboratory of Advance Materials of Yunnan Province；Key Laboratory of Advance Materials of Precious-Nonferrous Metals,Ministry of Education）.Effect of Ge–GeO₂ co-doping on non-ohmic behaviour of TiO₂–V₂O₅–Y₂O₃ varistor ceramics[J].半导体学报(英文版),2015,第7期 Kh.S.Karimov^1，2，M.Mahroof-Tahir³，M.Saleem⁴，M.Tariq Saeed Chani⁵，A.Khan Niaz¹（GIK Institute of Engineering Sciences and Technology；Center for Innovative Development of Science and New Technologies,Academy of Sciences；Department of Chemistry and Earth Sciences,Qatar University；Government College of Science；Center of Excellence for Advanced Materials Research (CEAMR),King Abdulaziz University）.Temperature sensor based on composite film of vanadium complex(VO₂（3-fl）)and CNT[J].半导体学报(英文版),2015,第7期杨乐，叶甜春，吴斌，张瑞齐（Institute of Microelectronics,Chinese Academy of Sciences）.LTE turbo decoder design[J].半导体学报(英文版),2015,第7期陶东言，程雨，刘京明，苏杰，刘彤，杨凤云，王凤华，曹可慰，董志远，赵有文（Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China）.化学和电性能（NH4）2S钝化GaSb表面[J].半导体学报(英文版),2015,第7期李志超，刘云涛，陈敏，肖璟博，陈杰（Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China；College of Information and Communication Engineering,Harbin Engineering University,Harbin 150001,China）.CMOS模拟前端芯片的电流型电化学传感器[J].半导体学报(英文版),2015,第7期汪鹏君，张学龙，张跃军，李建瑞（Institute of Circuits and Systems,Ningbo University,Ningbo 315211,China）.一种基于R-2R梯形网络数字模拟转换器可靠的PUF电路设计[J].半导体学报(英文版),2015,第7期叶益迭，夏银水（Faculty of Electrical Engineering and Computer Science,Ningbo University,Ningbo 315211,China）.一个平滑的过渡电流模式DAC单元电路[J].半导体学报(英文版),2015,第7期林体元，庞磊，王鑫华，黄森，刘果果，袁婷婷，刘新宇（Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academyof Sciences,Beijing 100029,China）.AlGaN/GaN HEMT的连续波和脉冲功率优化的仿真应用[J].半导体学报(英文版),2015,第7期 A.J.Fotue¹，N.Issofa¹，M.Tiotsop¹，S.C.Kenfack¹，M.P.Tabue Djemmo^1，2，H.Fotsin³，and L.C.Fai¹（Mesoscopic and Multilayers Structures Laboratory,Department of Physics,Faculty of Science,University of Dschang；Laboratory of Mechanics and Modeling of Physical Systems,Faculty of Science,University of Dschang；Laboratory of Electronics and Signal Processing,Department of Physics,Faculty of Science,University of Dschang）.Electric and magnetic optical polaron in quantum dot—Part 1：strong coupling[J].半导体学报(英文版),2015,第7期叶益迭，夏银水（Faculty of Electrical Engineering and Computer Science,Ningbo University）.A current-mode DAC unit circuit with smooth transition[J].半导体学报(英文版),2015,第7期雷勇¹，陆海²（School of Physics and Optoelectronic Engineering,Nanjing University of Information Science and Technology；School of Electronic Science and Engineering,Nanjing University）.Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT[J].半导体学报(英文版),2015,第7期 S.S.Shinde（Hanyang University）.Photocatalytic degradation of RhB and TNT and photocatalytic water splitting with CZTS microparticles[J].半导体学报(英文版),2015,第7期裴洋¹，武海斌¹，刘敬敏²（State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences；Beijing Orient Institute of Measurement & Test）.Optimized geometry and electronic structure of three-dimensional β-graphyne[J].半导体学报(英文版),2015,第7期雷勇，陆海（School of Physics and Optoelectronic Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China；School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China）.场板的表面状态有关的滞后特性的AlGaN/GaN HEMT的影响[J].半导体学报(英文版),2015,第7期首页上一页 4 5 6 7 8 下一页尾页共有13页，转到页

期刊文章列表