期刊的影响因子--文章列表

期刊文章列表
Hao Sun，Mostafa Khalil，Zifei Wang，Lawrence R. Chen（Department of Electrical and Computer Engineering McGill University Montreal. QC H3A 0E9）.Recent progress in integrated electro-optic frequency comb generation[J].Journal of Semiconductors,2021,第4期 Mengke Wang，Shangjian Zhang，Zhao Liu，Xuyan Zhang，Yutong He，Yangxue Ma，Yali Zhang，Zhiyao Zhang，Yong Liu（China）.High-frequency characterization of high-speed modulators and photodetectors in a link with low-speed photonic sampling[J].Journal of Semiconductors,2021,第4期 Jianou Huang¹，Chao Li¹，Rongguo Lu²，Lianyan Li³，Zizheng Cao¹（China；China）.Beyond the 100 Gbaud directly modulated laser for short reach applications[J].Journal of Semiconductors,2021,第4期 Lianping Hou，Song Tang，John H. Marsh（James Watt School of Engineering University of Glasgow Glasgow G12 8QQ）.Monolithic DWDM source with precise channel spacing[J].Journal of Semiconductors,2021,第4期 Shuai Yuan，Changran Hu，An Pan，Yuedi Ding，Xuanhao Wang，Zhicheng Qu，Junjie Wei，Yuheng Liu，Cheng Zeng，Jinsong Xia（China）.P hotonic devices based on thin-film lithium niobate on insulator[J].Journal of Semiconductors,2021,第4期 Yuhua Li^1，2，Xiang Wang³，Roy Davidson³，Brent E.Little⁴，Sai Tak Chu²（China；China；China；China）.F our-wave mixing in silicon-nanocrystal embedded high-index doped silica micro-ring resonator[J].Journal of Semiconductors,2021,第4期 Swapnajit Chakravarty，Min Teng，Reza Safian，Leimeng Zhuang（IMEC USA 194 Neocity Way Kissimmee FL 34744）.Hybrid material integration in silicon photonic integrated circuits[J].Journal of Semiconductors,2021,第4期 Mengxi Tan¹，Xingyuan Xu²，Jiayang Wu¹，Thach G.Nguyen³，Sai T.Chu⁴，Brent E.Little⁵，Arnan Mitchell³，Roberto Morandotti^6，7，David J.Moss¹（China；INRS -Énergie Matériaux et Télécommunications 1650 Boulevard Lionel-Boulet Varennes Québec J3X 1S2；China）.Orthogonally polarized RF optical single sideband generation with integrated ring resonators[J].Journal of Semiconductors,2021,第4期 Mengxi Tan¹，Xingyuan Xu²，Jiayang Wu¹，Thach G.Nguyen³，Sai T.Chu⁴，Brent E.Little⁵，Roberto Morandotti^6，7，Arnan Mitchell³，David J.Moss¹（China；INRS -Énergie Matériaux et Télécommunications 1650 Boulevard Lionel-Boulet Varennes Québec J3X 1S2；China）.P hotonic radio frequency channelizers based on Kerr optical micro-combs[J].Journal of Semiconductors,2021,第4期 Songtao Liu¹，Akhilesh Khope²（Microsoft Corporation One Microsoft Way Redmond Washington 98052）.L atest advances in high-performance light sources and optical amplifiers on silicon[J].Journal of Semiconductors,2021,第4期 Wei Wang¹，Lingjuan Zhao¹，Dan Lu¹，Jianping Yao²，Weiping Huang³，Yong Liu⁴，Brent Little⁵（China；School of Electrical Engineering and Computer Science University of Ottawa Ottawa Ontario；China；China；China）.Preface to the Special Issue on Semiconductor Optoelectronic Integrated Circuits[J].Journal of Semiconductors,2021,第4期 Ying Zhu， Yongli He， Shanshan Jiang， Li Zhu， Chunsheng Chen， Qing Wan（China）.I ndium–gallium–zinc–oxide thin-film transistors: Materials,devices, and applications[J].Journal of Semiconductors,2021,第3期 Wei Guan¹，Dong Yuan²，Juntao Wu¹，Xiaobo Zhou³，Hong Zhao¹，Fei Guo¹，Lianjie Zhang²，Ke Zhou³，Wei Ma³，Wanzhu Cai^1，2，Junwu Chen²，Liming Ding⁴，Lintao Hou¹（China；China；China；China）.Blade-coated organic solar cells from non-halogenated solvent offer 17% efficiency[J].Journal of Semiconductors,2021,第3期 Lin Song^1，2，Wei Yan^1，2，3，Hailong Wang^1，2，Jianhua Zhao^1，2，Xinhui Zhang^1，2（China；China；China）.Resonant enhancement of magnetic damping driven by coherent acoustic phonons in thin Co₂FeAl film epitaxied on GaAs[J].Journal of Semiconductors,2021,第3期 Xiangyu Li^1，2，Pengyuan Jiao^1，3，Chaoqun Yang^1，3（China；China；China）.Side-channel attack-resistant AES S-box with hidden subfield inversion and glitch-free masking[J].Journal of Semiconductors,2021,第3期 Zihan Zhang^1，2，Jia Li¹，Zhimin Fang²，Haipeng Xie³，Yongbo Yuan³，Chuantian Zuo²，Liming Ding²，Bin Yang¹（China；China；China）.Adjusting energy level alignment between HTL and CsPbI₂Br to improve solar cell efficiency[J].Journal of Semiconductors,2021,第3期 Liqiong Yang^1，2，Linfeng Wang³，Junhua Xiao^1，2，Longbing Zhang^1，2，Jian Wang^1，2（China；China；China）.A 1.2 V, 3.1% 3σ-accuracy thermal sensor analog front-end circuit in 12 nm CMOS process[J].Journal of Semiconductors,2021,第3期 Shurong Wang¹，Aili Wang¹，Feng Hao¹，Liming Ding²（China；China）.Renaissance of tin halide perovskite solar cells[J].Journal of Semiconductors,2021,第3期 Wensi Cai¹，Zhigang Zang¹，Liming Ding²（China；China）.Self-assembled monolayers enhance the performance of oxide thin-film transistors[J].Journal of Semiconductors,2021,第3期 Rokas Kondrotas^1，2，Chao Chen¹，Xin Xing Liu¹，Bo Yang¹，Jiang Tang¹（China；Center for Physical Sciences and Technology Sauletekio 3 Vilnius 10257）.L ow-dimensional materials for photovoltaic application[J].Journal of Semiconductors,2021,第3期 Hengyang Xiang¹，Chuantian Zuo²，Haibo Zeng¹，Liming Ding²（China；China）.White light-emitting diodes from perovskites[J].Journal of Semiconductors,2021,第3期 V.V.Kaminskii¹，N.V.Sharenkova²，G.A.Kamenskaya²，M.A.Grevtsev²，Yu.V.Lyubimova¹（Russia；Russia）.Anomalies in Young"s modulus behavior after annealing in polycrystalline SmS[J].Journal of Semiconductors,2021,第3期 Yingjie Zhao^1，2，Shan Li^1，2，Huixue Ren^1，2，Shaojie Li^1，2，Peide Han^1，2（China；China）.E nergy band adjustment of 808 nm GaAs laser power converters via gradient doping[J].Journal of Semiconductors,2021,第3期 Xiaoyu Tian^1，2，Yushen Liu²（China；China）.Van der Waals heterojunction ReSe₂/WSe₂ polarization-resolved photodetector[J].Journal of Semiconductors,2021,第3期 Yang Liqiong，Wang Linfeng，Xiao Junhua，Zhang Longbing，Wang Jian.A 1.2 V, 3.1% 3sigma-accuracy thermal sensor analog front-end circuit in 12 nm CMOS process[J].半导体学报,2021,第3期首页上一页 4 5 6 7 8 下一页尾页共有8页，转到页

期刊文章列表