期刊的影响因子--文章列表

期刊文章列表
Chaoqun Dang¹，Anliang Lu¹，Heyi Wang¹，Hongti Zhang²，Yang Lu^1，3，4（Department of Mechanical Engineering City University of Hong Kong Hong Kong；School of Physical Science and Technology ShanghaiTech University；Department of Materials Science and Engineering City University of Hong Kong Hong Kong；Nano-Manufacturing Laboratory (NML) Shenzhen Research Institute of City University of Hong Kong）.Diamond semiconductor and elastic strain engineering[J].Journal of Semiconductors,2022,第2期 Chao Li^1，2，3，Jie Li⁴，Yanbin Huang⁵，Jun Liu^1，2，3，Mengmeng Ma^1，2，3，Kong Liu^1，2，3，Chao Zhao^1，2，3，Zhijie Wang^1，2，3，Shengchun Qu^1，2，3，Lei Zhang⁵，Haiyan Han⁵，Wenshuang Deng⁵，Zhanguo Wang^1，2，3（Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences；Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices；Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences；College of Mechanical and Electrical Engineering Handan University；School of Mathematical Science and Engineering Hebei University of Engineering）.Recent development in electronic structure tuning of graphitic carbon nitride for highly efficient photocatalysis[J].Journal of Semiconductors,2022,第2期 Yihang Dong¹，Yong Zhang¹，Jian Shen¹，Zihan Xu¹，Xihua Zou²，Yikai Su¹（State Key Lab of Advanced Optical Communication Systems and Networks Department of Electronic Engineering Shanghai Jiao Tong University；Center for Information Photonics and Communications School of Information Science and Technology Southwest Jiao Tong University）.Silicon-integrated high-speed mode and polarization switch-andselector[J].Journal of Semiconductors,2022,第2期 Xianchun Peng^1，2，Jie Sun¹，Huan Liu^3，4，Liang Li¹，Qikun Wang⁴，Liang Wu⁴，Wei Guo¹，Fanping Meng¹，Li Chen¹，Feng Huang¹，Jichun Ye¹（Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences；Faculty of Materials Science and Chemical Engineering Ningbo University；State Key Laboratory of Advanced Special Steel Shanghai Key Laboratory of Advanced Ferrous Metallurgy School of Materials Science and Engineering Shanghai University；Ultratrend Technologies Inc.）.Structural and optical properties of AlN sputtering deposited on sapphire substrates with various orientations[J].Journal of Semiconductors,2022,第2期 L.Castañeda（Sección de Estudios de Posgrado e Investigación de la Escuela Superior de Medicina Instituto Politécnico Nacional Plan de San Luis y Díaz Mirón s/n Casco de Santo Tomás Ciudad de）.Transparent conductive stannic oxide coatings employing an ultrasonic spray pyrolysis technique: The relevance of the molarity content in the aerosol solution for improvement the electrical properties[J].Journal of Semiconductors,2022,第2期 Lili Ke¹，Lixiu Zhang²，Liming Ding²（Hunan Key Laboratory for Micro-Nano Energy Materials and Devices School of Physics and Optoelectronics Xiangtan University；Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology）.Suppressing photoinduced phase segregation in mixed halide perovskites[J].Journal of Semiconductors,2022,第2期 Xin Wang¹，Yongqiang Shi¹，Liming Ding²（School of Chemistry and Materials Science Anhui Normal University；Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology）.To enhance the performance of n-type organic thermoelectric materials[J].Journal of Semiconductors,2022,第2期 Feilong Ding¹，Baokang Peng¹，Xi Li²，Lining Zhang¹，Runsheng Wang³，Zhitang Song²，Ru Huang³（School of Electronic and Computer Engineering Peking University；Shanghai Institute of Micro-System and Information Technology Chinese Academy of Sciences；Institute of Microelectronics Peking University）.A review of compact modeling for phase change memory[J].Journal of Semiconductors,2022,第2期 Xiyan Pan^1，2，Liming Ding¹（Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology；University of Chinese Academy of Sciences）.Application of metal halide perovskite photodetectors[J].Journal of Semiconductors,2022,第2期 Kin Fai Tse，Shengyuan Wang，Man Hoi Wong，Junyi Zhu（Department of Physics The Chinese University of Hong Kong Hong Kong）.Defects properties and vacancy diffusion in Cu₂MgSnS₄[J].Journal of Semiconductors,2022,第2期 Yuan Yuan，Bassem Tossoun，Zhihong Huang，Xiaoge Zeng，Geza Kurczveil，Marco Fiorentino，Di Liang，Raymond G.Beausoleil（Hewlett Packard Labs Hewlett Packard Enterprise Milpitas CA 95035）.Avalanche photodiodes on silicon photonics[J].Journal of Semiconductors,2022,第2期（Ningbo Institute of Materials Technology and Engineering，Chinese Academy of Sciences，Ningbo 315201，China；Faculty of Materials Science and Chemical Engineering，Ningbo University，Ningbo 315211，China；Ningbo Institute of Materials Technology and Engineering，Chinese Academy of Sciences，Ningbo 315201，China；State Key Laboratory of Advanced Special Steel，Shanghai Key Laboratory of Advanced Ferrous Metallurgy，School of Materials Science and Engineering，Shanghai University，Shanghai 200044，China；Ultratrend Technologies Inc.，Hangzhou 311199，China；Ultratrend Technologies Inc.，Hangzhou 311199，China）.Structural and optical properties of AIN sputtering deposited on sapphire substrates with various orientations[J].半导体学报（英文版）,2022,第2期 Dingdong Xie¹，Jie Jiang¹，Liming Ding²（Hunan Key Laboratory of Super Microstructure and Ultrafast Process School of Physics and Electronics Central South University；Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology）.Anisotropic 2D materials for post-Moore photoelectric devices[J].Journal of Semiconductors,2022,第1期 Quan Pan，Xiongshi Luo（School of Microelectronics and Engineering Research Center of Integrated Circuits for Next-Generation CommunicationsMinistry of Education Southern University of Science and Technology）.A 58-dBΩ 20-Gb/s inverter-based cascode transimpedance amplifier for optical communications[J].Journal of Semiconductors,2022,第1期 Jing Yang¹，Degang Zhao^1，2，Zongshun Liu¹，Feng Liang¹，Ping Chen¹，Lihong Duan¹，Hai Wang¹，Yongsheng Shi¹（State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences；School of Electronic Electrical and Communication Engineering University of Chinese Academy of Sciences）.A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode[J].Journal of Semiconductors,2022,第1期 Jilin Wang^1，2，Ruibin Tang¹，Lixiu Zhang³，Fei Long^1，2，Disheng Yao^1，2，Liming Ding³（School of Materials Science and Engineering Key Laboratory of New Processing Technology for Nonferrous Metals and Materials (MoE)Guilin University of Technology；Guangxi Key Laboratory of Optical and Electronic Materials and Devices Guilin University of Technology；Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology）.Alkali metal cation engineering in organic/inorganic hybrid perovskite solar cells[J].Journal of Semiconductors,2022,第1期 Xiujun Hao^1，2，Yan Teng¹，He Zhu¹，Jiafeng Liu¹，Hong Zhu¹，Yunlong Huai¹，Meng Li^1，2，Baile Chen³，Yong Huang¹，Hui Yang^1，2（Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics CAS；School of Physical Science and Technology ShanghaiTech University；School of Information Science and Technology ShanghaiTech University）.High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD[J].Journal of Semiconductors,2022,第1期 K.S.Zhuravlev¹，A.L.Chizh²，K.B.Mikitchuk²，A.M.Gilinsky¹，I.B.Chistokhin¹，N.A.Valisheva¹，D.V.Dmitriev¹，A.I.Toropov¹，M.S.Aksenov¹（A.V.Rzhanov Institute of Semiconductor Physics The Siberian Branch of the Russian Academy of Sciences Ac.Lavrentiev Avenue 13；Laboratory of Microwave Photonics SSPA “Optics Optoelectronics and Laser Technology” of National Academy of Sciences of BelarusLogoiski trakt 22）.High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission[J].Journal of Semiconductors,2022,第1期 Qin Zhou^1，2，3，Chuantian Zuo⁴，Zilong Zhang^1，3，Peng Gao^1，2，3，Liming Ding⁴（Key Laboratory of Design and Assembly of Functional Nanostructures (CAS) Fujian Institute of Research on the Structure of Matter (CAS)；Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology；University of Chinese Academy of Sciences；Laboratory for Advanced Functional Materials Xiamen Institute of Rare Earth Materials Haixi Institute (CAS)）.F-containing cations improve the performance of perovskite solar cells[J].Journal of Semiconductors,2022,第1期 Lixing Zhou¹，Jinjuan Xiang²，Xiaolei Wang²，Wenwu Wang²（Faculty of Information Technology School of Microelectronics Beijing University of Technology；Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences）.I nvestigation on the passivation, band alignment, gate charge,and mobility degradation of the Ge MOSFET with a GeO_x /Al₂O₃ gate stack by ozone oxidation[J].Journal of Semiconductors,2022,第1期 Kaiyao Xin^1，2，Xingang Wang^1，2，Kasper Grove-Rasmussen^3，2，Zhongming Wei^1，2（State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences；Center for Quantum Devices & Nano-Science Center Niels Bohr Institute University of Copenhagen Copenhagen Ø 2100；Sino-Danish Center for Education and Research Sino-Danish College University of Chinese Academy of Sciences）.Twist-angle two-dimensional superlattices and their application in (opto)electronics[J].Journal of Semiconductors,2022,第1期 Tianyi Tang^1，2，3，Tian Yu^1，2，3，Guanqing Yang^1，2，3，Jiaqian Sun^1，2，3，Wenkang Zhan^1，2，3，Bo Xu^1，2，3，Chao Zhao^1，2，3，Zhanguo Wang^1，2，3（Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences；Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices；College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Science）.I nvestigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers[J].Journal of Semiconductors,2022,第1期 R.Rahaman，M.Sharmin，J.Podder（Department of Physics）.Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films[J].Journal of Semiconductors,2022,第1期 Zhaomeng Gao^1，2，Shuxian Lyu^1，2，Hangbing Lyu^1，2（Key Laboratory of Microelectronics Device & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences；University of Chinese Academy of Sciences）.Frequency dependence on polarization switching measurement in ferroelectric capacitors[J].Journal of Semiconductors,2022,第1期 Qing Zhang¹，Jun Zhang^2，3（School of Materials Science and Engineering Peking University；State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences；Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences）.All-optical switching based on self-assembled halide perovskite microwires[J].Journal of Semiconductors,2022,第1期 Yongbo Liu^1，2，Huilong Zhu^1，2，3，Yongkui Zhang¹，Xiaolei Wang¹，Weixing Huang^1，2，Chen Li^1，2，Xuezheng Ai¹，Qi Wang¹（Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences；University of Chinese Academy of Sciences；University of Science and Technology of China）.Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation[J].Journal of Semiconductors,2022,第1期 Quan Pan，Xiongshi Luo（School of Microelectronics and Engineering Research Center of Integrated Circuits for Next-Generation Communications，Ministry of Education，Southern University of Science and Technology）.A 58-dB? 20-Gb/s inverter-based cascode transimpedance amplifier for optical communications[J].Journal of Semiconductors,2022,第1期 Lixing Zhou，Jinjuan Xiang，Xiaolei Wang，Wenwu Wang（Faculty of Information Technology；Key Laboratory of Microelectronics Devices&Integrated Technology）.Investigation on the passivation,band alignment,gate charge,and mobility degradation of the Ge MOSFET with a GeO/Al;O;gate stack by ozone oxidation[J].半导体学报(英文版),2022,第1期首页上一页 4 5 6 7 下一页尾页共有7页，转到页

期刊文章列表