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Banpeng Cao1,2,Changhao Dai2,Xuejun Wang2,Dacheng Wei2(Jiangxi Key Laboratory of Organic Chemistry Jiangxi Science and Technology Normal University Nanchang 330013 China;State Key Laboratory of Molecular Engineering of Polymers Department of Macromolecular Science Fudan University).Ultrasensitive detection of methamphetamine by antibodymodified transistor assay[J].Journal of Semiconductors,2023,第2期
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Zhao Li1,2,3,Xiangmei Lin4,Dongxian He5,Yingxin Ma6,Yuanjing Lin7(State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences;Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences;Beijing Key Laboratory of Genome and Precision Medicine Technologies;Chinese Academy of Inspection and Quarantine;College of Water Resources and Civil Engineering China Agricultural University;CAS Key Laboratory of Quantitative Engineering Biology Guangdong Provincial Key Laboratory of Synthetic Genomics and Shenzhen Key Laboratory of Synthetic Genomics Shenzhen Institute of Synthetic Biology Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 China;School of Microelectronics Southern University of Science and Technology).Preface to Special Issue on Novel Semiconductor-biochemical Sensors[J].Journal of Semiconductors,2023,第2期
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Xinhao Zhang1,2,Bo Peng1,2(National Engineering Research Center of Electromagnetic Radiation Control Materials,School of Electronic Science and Engineering,University of Electronic Science and Technology of China;Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education,University of Electronic Science and Technology of China).The twisted two-dimensional ferroelectrics[J].Journal of Semiconductors,2023,第1期
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Xiuli Li1,2,Yupeng Zhu1,2,Zhi Liu1,2,Linzhi Peng1,2,Xiangquan Liu1,2,Chaoqun Niu1,2,Jun Zheng1,2,Yuhua Zuo1,2,Buwen Cheng1,2(State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences).75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique[J].Journal of Semiconductors,2023,第1期
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Moyu Chen1,Fanqiang Chen1,Bin Cheng2,Shi Jun Liang1,Feng Miao1(Institute of Brain-Inspired Intelligence,National Laboratory of Solid State Microstructures,School of Physics,Collaborative Innovation Center of Advanced Microstructures,Nanjing University;Institute of Interdisciplinary Physical Sciences,School of Science,Nanjing University of Science and Technology).Moiré heterostructures: highly tunable platforms for quantum simulation and future computing[J].Journal of Semiconductors,2023,第1期
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Hua Li1,Jinyang Ling1,Jiamin Lin1,Xin Lu2,Weigao Xu1(Key Laboratory of Mesoscopic Chemistry,School of Chemistry and Chemical Engineering,Nanjing University;Department of Physics and Engineering Physics,Tulane University).Interface engineering in two-dimensional heterostructures towards novel emitters[J].Journal of Semiconductors,2023,第1期
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Zhenyao Li1,2,Jia-Min Lai1,2,Jun Zhang1,2,3(State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences;CAS Center of Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences).Review of phonons in moiré superlattices[J].Journal of Semiconductors,2023,第1期
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Xinyu Huang1,Xu Han1,2,3,Yunyun Dai1,Xiaolong Xu4,Jiahao Yan4,Mengting Huang4,Pengfei Ding1,Decheng Zhang1,Hui Chen1,Vijay Laxmi4,Xu Wu1,Liwei Liu4,Yeliang Wang4,5,Yang Xu2,3,Yuan Huang1,5(Advanced Research Institute of Multidisciplinary Science,Beijing Institute of Technology;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences;School of Physical Sciences,University of Chinese Academy of Sciences;School of Integrated Circuits and Electronics,MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices,Beijing Institute of Technology;BIT Chongqing Institute of Microelectronics and Microsystems).Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices[J].Journal of Semiconductors,2023,第1期
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Zheng Tang1,Liming Ding2(State Key Laboratory for Modification of Chemical Fibers and Polymer Materials,Center for Advanced Low-dimension Materials,College of Materials Science and Engineering,Donghua University;Center for Excellence in Nanoscience (CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS),National Center for Nanoscience and Technology).The voltage loss in organic solar cells[J].Journal of Semiconductors,2023,第1期
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Li Zhong1,Xiaobao Li1,2,Wei Wang1,Xinle Xiao3(School of Civil Engineering,Hefei University of Technology;Jiangsu Key Laboratory of Engineering Mechanics,Southeast University;Key Laboratory of MicroNano Powder and Advanced Energy Materials of Anhui Higher Education Institute,School of Chemistry and Materials Engineering,Chizhou University).Electromechanical and photoelectric properties of a novel semiconducting Janus InGaSSe monolayer[J].Journal of Semiconductors,2023,第1期
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Yuchen Gao1,Yu Ye1,2,3(State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University;Collaborative Innovation Center of Quantum Matter;Peking University Yangtze Delta Institute of Optoelectronics).Interaction of moiré excitons with cavity photons in twodimensional semiconductor hetero-bilayers[J].Journal of Semiconductors,2023,第1期
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Siwen Zhao1,Gonglei Shao2,Zheng Vitto Han3,4,Song Liu2,Tongyao Zhang3,4(Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences;Institute of Chemical Biology and Nanomedicine,State Key Laboratory of Chemo/Biosensing and Chemometrics,College of Chemistry and Chemical Engineering,Hunan University;State Key Laboratory of Quantum Optics and Quantum Optics Devices,Institute of Opto-Electronics,Shanxi University;Collaborative Innovation Center of Extreme Optics,Shanxi University).Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS2[J].Journal of Semiconductors,2023,第1期
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Mengjia Li1,Lixiu Zhang2,Cong Chen1,3,Jiangzhao Chen4,Liming Ding2(State Key Laboratory of Reliability and Intelligence of Electrical Equipment,School of Materials Science and Engineering,Hebei University of Technology;Key Laboratory of Optoelectronic Technology &Systems (MoE),College of Optoelectronic Engineering,Chongqing University;Center for Excellence in Nanoscience (CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS),National Center for Nanoscience and Technology;Macao Institute of Materials Science and Engineering (MIMSE),Macau University of Science and Technology).The degradation of perovskite precursor[J].Journal of Semiconductors,2023,第1期
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Xin Lu(Department of Physics and Engineering Physics,Tulane University).Single photon emitters originating from donor-acceptor pairs[J].Journal of Semiconductors,2023,第1期
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Jun Zhang1,2,Zhongming Wei1,2(State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences).Preface to Special Topic on Twisted van der Waals Heterostructures[J].Journal of Semiconductors,2023,第1期
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