期刊的影响因子--文章列表

期刊文章列表
裴洋，武海斌，刘敬敏（State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China；Beijing Orient Institute of Measurement & Test,Beijing 100094,China）.优化的三维β几何和电子结构graphyne[J].半导体学报(英文版),2015,第7期 Pei Yang，Wu Haibin，Liu Jingmin（Institute of Semiconductors，Chinese Academy of Sciences，State Key Laboratory of Superlattices and Microstructures，Beijing，100083；Beijing Orient Institute of Measurement & Test，Beijing，100094）.Optimized geometry and electronic structure of three β-dimensional β-graphyne[J].Journal of Semiconductors,2015,第7期 L.Ayat¹，A.F.Bouhdjar²，AF.Meftah²，N.Sengouga²（Laboratory of Semiconductor Devices Physics,Physics Department,University of Béchar；Faculté des Sciences de la matière,Laboratoire des Matériaux Semi-conducteurs et Métalliques,Université Mohammed Khider）.Numerical simulation of the effect of the free carrier motilities on light-soaked a-Si：H p–i–n solar cell[J].半导体学报(英文版),2015,第7期 L. Ayat，A. F. Bouhdjar，AF. Meftah，N. Sengouga（Laboratory of Semiconductor Devices Physics,Physics Department,University of Bechar,P. O. Box 417,Bechar 08000,Algeria；Faculte des Sciences de la matiere,Laboratoire des Materiaux Semi-conducteurs et Metalliques,Universite Mohammed Khider,B. E 145,Biskra 07000,Algerie）.对自由载流子的运动对光的效应数值模拟浸泡a-Si∶H型太阳能电池[J].半导体学报(英文版),2015,第7期 E Paradeo（Unstituto de Fisica,Universidad Nacional Autonoma de Mexico,DF 01000,Mexico）.一种外部偏置控制的锰掺杂半导体纳米结构的磁极化[J].半导体学报(英文版),2015,第7期 Sangeeta Singh，P.N.Kondekar（Department of Electronics and Communication Engineering,PDPM-Indian Institute of Information Technology,Design and Manufacturing (IIITDM) Jabalpur Jabalpur,MP,India）.Dopingless impact ionization MOS(DL-IMOS)—a remedy for complex process flow[J].半导体学报(英文版),2015,第7期张汝民^1，2，刘鹏^1，2，刘迪军^2，3，苏国斌³（School of Electronic and Information Engineering,Beihang University；State Key Laboratory of Wireless Mobile Communications,China Academy of Telecommunications Technology (CATT)；Leadcore Technology Co.Ltd.）.A new method for calculation of majority carrier compensation in photovoltaics[J].半导体学报(英文版),2015,第7期 A. J. Fotue，N. Issofa，M. Tiotsop，S. C. Kenfack，M. P. Tabue Djemmo，H. Fotsin，L. C. Fai（Mesoscopic and Multilayers Structures Laboratory,Department of Physics,Faculty of Science,University of Dschang,P. O. Box 479,Dschang,Cameroon；Laboratory of Electronics and Signal Processing,Department of Physics,Faculty of Science,University ofDschang,E O. Box 67,Dschang,Cameroon；Laboratory of Mechanics and Modeling of Physical Systems,Faculty of Science,University of Dschang,E O. Box 67,Dschang,Cameroon）.在量子点——1电磁极化子：强耦合[J].半导体学报(英文版),2015,第7期赵丽霞，杨超，朱贺，宋建军（Hebei Poshing Electronics Technology Co. Ltd.,Shijiazhuang 050200,China；Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China）.散射机制的孔（001），（101），（111）双轴应变硅和锗硅材料[J].半导体学报(英文版),2015,第7期 Kh. S. Karimov，M. Mahroof-Tahir，M. Saleem，M. Tariq Saeed Chani，A. Khan Niaz（GIK Institute of Engineering Sciences and Technology,Topi,District Swabi-23640,KPK,Pakistan；Center for Innovative Development of Science and New Technologies,Academy of Sciences,Rudaki Ave.33,Dushanbe,734025,Tajikistan；Department of Chemistry and Earth Sciences,Qatar University,Doha-2713,Qatar；Government College of Science,Wahdat Road,Lahore-54570,Pakistan；Center of Excellence for Advanced Materials Research (CEAMR),King Abdulaziz University,Jeddah 21589,Saudi Arabia）.基于钒复合薄膜温度传感器（VO2（3-FL））和碳纳米管[J].半导体学报(英文版),2015,第7期 Sangeeta Singh P. N. Kondekar（Department of Electronics and Communication Engineering,PDPM-Indian Institute of Information Technology,Design andManufacturing (IIITDM) Jabalpur Jabalpur,MP,India）.dopingless碰撞电离的MOS（dl-imos）l复杂流程的补救措施[J].半导体学报(英文版),2015,第7期 S. S. Shinde（Hanyang University,Ansan 305340,Korea）.罗丹明B和TNT和CZTS微粒的光催化分解水的光催化降解[J].半导体学报(英文版),2015,第7期 P.Paradeo（Unstituto de Fisica,Universidad Nacional Autonoma de Mexico）.Magnetic polarization of a Mn-doped semiconductor nanostructure controlled by an external bias[J].半导体学报(英文版),2015,第7期张汝民，刘鹏，刘迪军，苏国斌（School of Electronic and Information Engineering,Beihang University,Beijing 100191,China；State Key Laboratory of Wireless Mobile Communications,China Academy of Telecommunications Technology (CATT),Beijing 100191,China；Leadcore Technology Co. Ltd.,Beijing 100191,China）.在光伏电池的多数载流子补偿计算的一种新方法[J].半导体学报(英文版),2015,第7期赵丽霞^1，2，杨超²，朱贺²，宋建军²（Hebei Poshing Electronics Technology Co.Ltd.；Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University）.Scattering mechanism of hole in（001）,（101）,（111） biaxially-strained Si and Si_1-xGe_x materials[J].半导体学报(英文版),2015,第7期代晓艳，史成武，张艳茹，吴妮（School of Chemistry and Chemical Engineering,Hefei University of Technology,Hefei 230009,China；Key Laboratory of Novel Thin Film Solar Cells,Chinese Academy of Sciences,Hefei 230031,China）.用亚稳态TiCl4异丙醇/水溶液的有机-无机杂化钙钛矿太阳能电池异质结的紧凑型TiO2层水解制备[J].半导体学报(英文版),2015,第7期段波，安卫静，周建伟，王帅（Institute of Microelectronics,Hebei University of Technology,Tianjin 300130,China）.酸/氧络合剂和过氧化氢对钌在弱碱性泥浆中化学机械抛光的影响[J].半导体学报(英文版),2015,第7期刘洋^1，2，3，梁润园^2，3，黄洁莹^2，3，袁长安^2，4，3，张国旗^4，5，孙凤莲¹（School of Material Science and Engineering Harbin University of Science and Technology；Beijing Research Centre Delft University of Technology；State Key Laboratory of Solid State Lighting；Institute of Semiconductors Chinese Academy of Sciences；DIMES Center for SSL Technologies Delft University of Technology）.Thermal simulation of flexible LED package enhanced with copper pillars[J].半导体学报(英文版),2015,第6期 Joshua M.Kundu，Patrick M.Karimi，Walter K.Njoroge（Department of Physics，Kenyatta University）.Crystallization kinetics of Sn₄₀Se₆₀ thin films for phase change memory applications[J].半导体学报(英文版),2015,第6期赵丹梅，赵德刚，江德生，刘宗顺，朱建军，陈平，刘炜，李翔，侍铭（State Key Laboratory on Integrated Optoelectronics，Institute of Semiconductors，Chinese Academy of Sciences）.Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon[J].半导体学报(英文版),2015,第6期 S.Theodore Chandra¹，N.B.Balamurugan¹，M.Bhuvaneswari²，N.Anbuselvan²，N.Mohankumar²（National Instruments Electronics Laboratory，Department of ECE，Thiagarajar College of Engineering；Department of ECE，SKP Engineering College）.Analysis of charge density and Fermi level of Al In Sb/In Sb single-gate high electron mobility transistor[J].半导体学报(英文版),2015,第6期赵启凤¹，庄奕琪¹，包军林¹，胡为²（School of Microelectronics Xidian University；School of Mechano-Electronic Engineering Xidian University）.Model of radiation-induced gain degradation of NPN bipolar junction transistor at different dose rates[J].半导体学报(英文版),2015,第6期王志明¹，黄辉²，胡志富³，赵卓彬¹，王旭东^1，3，罗晓斌¹，刘军¹，杨宋源¹，吕昕¹（Beijing Key Laboratory of Millimeter Wave and Terahertz Technology Beijing Institute of Technology；National Institute of Metrology；Hebei Semiconductor Research Institute）.Comparison of on-wafer calibrations for THz In P-based PHEMTs applications[J].半导体学报(英文版),2015,第6期杨艳军，曾云（School of Physics and Electronics，Hunan University）.A fully integrated CMOS VCXO-IC with low phase noise, wide tuning range and high tuning linearity[J].半导体学报(英文版),2015,第6期毕津顺，韩郑生（Institute of Microelectronics，Chinese Academy of Sciences）.Characteristics of HfO₂/Hf-based bipolar resistive memories[J].半导体学报(英文版),2015,第6期刘雄¹，姚言¹，马嘉豪¹，张龑航²，王谦²，张兆华¹，任天令²（Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences；Institute of Microelectronics Tsinghua University）.Micro packaged MEMS pressure sensor for intracranial pressure measurement[J].半导体学报(英文版),2015,第6期 M Errai¹，A El kaaouachi¹，H El idrissi²（Laboratoire MSTI，Ecole Supérieure de tecchnologie d’Agadir，B.P: 33/S University Ibn Zohr，Faculty of Sciences，Agadir，Morocco；Laboratoire Electronique，électrotechnique，Automatique et Traitement de l’Information，Département Génie Electrique，Faculté des Sciences et Techniques de Mohammedia，Université Hassan II Mohammedia Casablanca，BP 146 Quartier Yasmina，Mohammedia）.Electrical properties of ⁷⁰Ge：Ga near the metal–insulator transition[J].半导体学报(英文版),2015,第6期李虹，蒲红斌，郑春蕾，陈治明（Department of Electronic Engineering，Xi’an University of Technology）.β-FeSi₂ films prepared on 6H-SiC substrates by magnetron sputtering[J].半导体学报(英文版),2015,第6期 K.Kacha¹，F.Djeffal^1，2，H.Ferhati¹，D.Arar¹，M.Meguellati¹（LEA，Department of Electronics，University of Batna；LEPCM，University of Batna）.Numerical investigation of a double-junction a：Si Ge thin-film solar cell including the multi-trench region[J].半导体学报(英文版),2015,第6期首页上一页 5 6 7 8 9 下一页尾页共有13页，转到页

期刊文章列表