期刊的影响因子--文章列表

期刊文章列表
Daquan Yang¹，Xiao Liu¹，Xiaogang Li¹，Bing Duan¹，Aiqiang Wang¹，Yunfeng Xiao^{2，3，4，5}（China；China；China；China；China）.Photoic crystal nanobeam cavity devices for on-chip integrated silicon photonics[J].Journal of Semiconductors,2021,第2期 Ling Liu^1，2，Zuo Xiao¹，Chuantian Zuo¹，Liming Ding^1，2（China；China）.Inorganic perovskite/organic tandem solar cells with efficiency over 20%[J].Journal of Semiconductors,2021,第2期 Shuiying Xiang^1，2，Yanan Han¹，Ziwei Song¹，Xingxing Guo¹，Yahui Zhang¹，Zhenxing Ren¹，Suhong Wang¹，Yuanting Ma¹，Weiwen Zou³，Bowen Ma³，Shaofu Xu³，Jianji Dong⁴，Hailong Zhou⁴，Quansheng Ren⁵，Tao Deng⁶，Yan Liu²，Genquan Han²，Yue Hao²（China；China；China；China；China；China）.A review: Photonics devices, architectures, and algorithms for optical neural computing[J].Journal of Semiconductors,2021,第2期 Wenzhe Li¹，Jiandong Fan¹，Liming Ding²（China；China）.Multidimensional perovskites enhance solar cell performance[J].Journal of Semiconductors,2021,第2期 Dingyi Wu^1，2，Xiao Hu^1，2，Weizhong Li^1，2，Daigao Chen^1，2，Lei Wang^1，2，Xi Xiao^1，2（China；China）.62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud[J].Journal of Semiconductors,2021,第2期 Ran Cheng¹，Zhuo Chen¹，Sicong Yuan¹，Mitsuru Takenaka²，Shinichi Takagi²，Genquan Han³，Rui Zhang¹（China；China；School of Engineering Tokyo University Yayoi 2-11-16 Tokyo 113-8656）.Mobility enhancement techniques for Ge and GeSn MOSFETs[J].Journal of Semiconductors,2021,第2期 Min Tan^1，2，Kaixuan Ye¹，Da Ming¹，Yuhang Wang¹，Zhicheng Wang¹，Li Jin³，Junbo Feng³（China；China；China）.Towards electronic-photonic-converged thermo-optic feedback tuning[J].Journal of Semiconductors,2021,第2期 Ying Sun¹，Xiao Yu²，Rui Zhang¹，Bing Chen¹，Ran Cheng¹（China；China）.The past and future of multi-gate field-effect transistors: Process challenges and reliability issues[J].Journal of Semiconductors,2021,第2期 Zhaowu Tang¹，Chunsen Liu^1，2，Senfeng Zeng¹，Xiaohe Huang¹，Liwei Liu¹，Jiayi Li¹，Yugang Jiang²，David Wei Zhang¹，Peng Zhou¹（China；China）.Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering[J].Journal of Semiconductors,2021,第2期 Tengzhi Yang^1，2，Yan Cui¹，Yanru Li^1，2，Meiyin Yang¹，Jing Xu¹，Huiming He³，Shiyu Wang³，Jing Zhang^2，3，Jun Luo^1，2（China；China；China）.The effect of γ-ray irradiation on the SOT magnetic films and Hall devices[J].Journal of Semiconductors,2021,第2期 Yue Hao¹，Huaqiang Wu²，Yuchao Yang³，Qi Liu⁴，Xiao Gong⁵，Genquan Han¹，Ming Li⁶（China；China；China；China；Singapore；China）.Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration[J].Journal of Semiconductors,2021,第2期 Xiangdong Li^1，2，Karen Geens¹，Nooshin Amirifar¹，Ming Zhao¹，Shuzhen You¹，Niels Posthuma¹，Hu Liang¹，Guido Groeseneken^1，2，Stefaan Decoutere¹（Department of Electrical Engineering KU Leuven Leuven 3001）.Integration of GaN analog building blocks on p-GaN wafers for GaN ICs[J].Journal of Semiconductors,2021,第2期 GenquanHan，YueHao（China）.Design technology co-optimization towards sub-3 nm technology nodes[J].Journal of Semiconductors,2021,第2期 ShuyuBao，YueWang，KhawLina，LiZhang，BingWang，Wardh，AjiSasangka，KennethEngKianLee，SooJinChua，JurgenMichel，EugeneFitzgerald（Singapore；China；Singapore；Materials Research Laboratories Massachusetts Institute of Technology Cambridge MA 02139；Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139；Singapore）.A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III-V-on-Si wafers[J].Journal of Semiconductors,2021,第2期 Yang Tengzhi，Cui Yan，Li Yanru，Yang Meiyin，Xu Jing，He Huiming，Wang Shiyu，Zhang Jing，Luo Jun.The effect of gamma-ray irradiation on the SOT magnetic films and Hall devices[J].半导体学报,2021,第2期 Shuyu Bao¹，Yue Wang¹，Khaw Lina¹，Li Zhang¹，Bing Wang^1，2，Wardhana Aji Sasangka¹，Kenneth Eng Kian Lee¹，Soo Jin Chua^1，3，Jurgen Michel^1，4，Eugene Fitzgerald^1，5，Chuan Seng Tan^1，6，Kwang Hong Lee¹（Low Energy Electronic Systems (LEES)，Singapore-MIT Alliance for Research and Technology (SMART)；School of Electronics and Information Technology，Sun Yat-Sen University；Department of Electrical and Computer Engineering，National University of Singapore；Materials Research Laboratories，Massachusetts Institute of Technology；Department of Materials Science and Engineering，Massachusetts Institute of Technology；School of Electrical and Electronic Engineering，Nanyang Technological University）.A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and Ⅲ–Ⅴ-on-Si wafers[J].Journal of Semiconductors,2021,第2期 Jianqiang Qin^1，2，Lixiu Zhang¹，Chuantian Zuo¹，Zuo Xiao¹，Yongbo Yuan³，Shangfeng Yang⁴，Feng Hao⁵，Ming Cheng⁶，Kuan Sun²，Qinye Bao⁷，Zhengyang Bin⁸，Zhiwen Jin⁹，Liming Ding¹（China；China；China；China；China；China；China；China；China）.A chlorinated copolymer donor demonstrates a 18.13% power conversion efficiency[J].Journal of Semiconductors,2021,第1期 Fuyou Liao^1，2，Feichi Zhou²，Yang Chai^1，2（China；Department of Applied Physics The Hong Kong Polytechnic University Hong Kong）.Neuromorphic vision sensors: Principle, progress and perspectives[J].Journal of Semiconductors,2021,第1期 Jia Chen^1，2，Jiancong Li^1，2，Yi Li^1，2，Xiangshui Miao^1，2（China；China）.Multiply accumulate operations in memristor crossbar arrays for analog computing[J].Journal of Semiconductors,2021,第1期 Andrey S.Sokolov¹，Haider Abbas¹，Yawar Abbas²，Changhwan Choi¹（United Arab Emirates）.Towards engineering in memristors for emerging memory and neuromorphic computing: A review[J].Journal of Semiconductors,2021,第1期 Yanghao Wang¹，Yuchao Yang^1，2，Yue Hao³，Ru Huang^1，2（China；China；China）.Embracing the era of neuromorphic computing[J].Journal of Semiconductors,2021,第1期 Xiaoxue Ren¹，Lixiu Zhang^2，3，Yongbo Yuan¹，Liming Ding^2，3（China；China；China）.Ion migration in perovskite solar cells[J].Journal of Semiconductors,2021,第1期 Ye Tao^1，2，Xuhong Li¹，Zhongqiang Wang¹，Gang Li³，Haiyang Xu¹，Xiaoning Zhao¹，Ya Lin¹，Yichun Liu¹（China；China；China）.Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices[J].Journal of Semiconductors,2021,第1期 Heyi Huang^1，2，Chen Ge^1，2，Zhuohui Liu^1，2，Hai Zhong¹，Erjia Guo^1，2，Meng He¹，Can Wang^1，2，3，Guozhen Yang¹，Kuijuan Jin^1，2，3（China；China；China）.Electrolyte-gated transistors for neuromorphic applications[J].Journal of Semiconductors,2021,第1期 Xin Yang， Chen Luo， Xiyue Tian， Fang Liang， Yin Xia， Xinqian Chen， Chaolun Wang， Steve Xin Liang， Xing Wu， Junhao Chu（China；China）.A revew of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory[J].Journal of Semiconductors,2021,第1期 Jiajuan Shi， Ya Lin， Tao Zeng， Zhongqiang Wang， Xiaoning Zhao， Haiyang Xu， Yichun Liu（China）.Voltage-dependent plasticity and image Boolean operations realized in a WO_x -based memristive synapse[J].Journal of Semiconductors,2021,第1期 Xin Yang¹，Chen Luo¹，Xiyue Tian¹，Fang Liang¹，Yin Xia¹，Xinqian Chen¹，Chaolun Wang¹，Steve Xin Liang²，Xing Wu¹，Junhao Chu¹（Shanghai Key Laboratory of Multidimensional Information Processing，East China Normal University；Changjiang Electronics Integrated Circuit (Shaoxing) Co.Ltd）.A review of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory[J].半导体学报(英文版),2021,第1期首页上一页 5 6 7 8 下一页尾页共有8页，转到页

期刊文章列表