Jing Yang，Degang Zhao，Zongshun Liu，Feng Liang，Ping Chen，Lihong Duan，Hai Wang，Yongsheng Shi（State Key Laboratory of Integrated Optoelectronics，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China；State Key Laboratory of Integrated Optoelectronics，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China；School of Electronic，Electrical and Communication Engineering，University of Chinese Academy of Sciences，Beijing 100049，China）.A 357.9 nm GaN/AIGaN multiple quantum well ultraviolet laser diode[J].半导体学报(英文版),2022,第1期
K.S.Zhuravlev，A.L.Chizh，K.B.Mikitchuk，A.M.Gilinsky，I.B.Chistokhin，N.A.Valisheva，D.V.Dmitriev，A.I.Toropov，M.S.Aksenov（A.V.Rzhanov Institute of Semiconductor Physics，The Siberian Branch of the Russian Academy of Sciences，Ac.Lavrentiev Avenue 13，Novosibirsk 630090，Russia；Laboratory of Microwave Photonics，SSPA "Optics，Optoelectronics and Laser Technology" of National Academy of Sciences of Belarus，Logoiski trakt 22，Minsk 220090，Belarus）.High-power InAIAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission[J].半导体学报(英文版),2022,第1期