期刊的影响因子--文章列表

期刊文章列表
安琪¹，金鹏²，王占国²（China Electronics Standardization Institute；Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Mate-rials and Devices Institute of Semiconductors Chinese Academy of Sciences）.Estimation of the optical loss in bent-waveguide superluminescent diodes by an analytical method[J].半导体学报(英文版),2015,第6期沈静曼，孙利杰，陈开建，张玮，王训春（Center for Photovoltaic Engineering，Shanghai Institute of Space Power Sources）.Direct-bonded four-junction Ga As solar cells[J].半导体学报(英文版),2015,第6期张金灿¹，张玉明²，吕红亮²，张义门²，刘博¹，张雷鸣¹，向菲¹（Electrical Engineering College Henan University of Science and Technology；School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices）.A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technology[J].半导体学报(英文版),2015,第6期陈勇臻，陈迟晓，冯泽民，叶凡，任俊彦（State Key Laboratory of ASIC and System，Fudan University）.14-bit 100 MS/s 121 mW pipelined ADC[J].半导体学报(英文版),2015,第6期蔡江铮，张苏敏，袁甲，商新超，陈黎明，黑勇（Institute of Microelectronics，Chinese Academy of Sciences）.A 320 mV,6 kb subthreshold 10T SRAM employing voltage lowering techniques[J].半导体学报(英文版),2015,第6期徐向明^1，2，黄景丰²，遇寒²，钱文生²，周正良²，韩波^2，3，王勇¹，王鹏飞¹，张卫¹（State Key Laboratory of ASIC and System School of Microelectronics Fudan University；HuaHong Grace Semiconductor Manufacturing Corporation；School of Computer and Information Engineering Fuyang Teachers College）.Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy[J].半导体学报(英文版),2015,第6期唐继英^1，2，刘玉岭¹，孙鸣¹，樊世燕¹，李炎¹（Institute of Microelectronics Hebei University of Technology；Electrical Engineering Department Tianjin Metallurgical Vocation-Technology Institute）.Benzotriazole removal on post-Cu CMP cleaning[J].半导体学报(英文版),2015,第6期杨涛，姜宇，刘生有，郭桂良，阎跃鹏（Institute of Microelectronics，Chinese Academy of Sciences）.A low-power CMOS WIA-PA transceiver with a high sensitivity GFSK demodulator[J].半导体学报(英文版),2015,第6期周桃飞，熊康林，张敏，刘磊，田飞飞，张志强，顾泓，黄俊，王建峰，董建荣，徐科（Suzhou Institute of Nano-Tech and Nano-Bionics，Chinese Academy of Sciences）.Leakage of photocurrent：an alternative view on I–V curves of solar cells[J].半导体学报(英文版),2015,第6期 Vaia Adamaki¹，A.Sergejevs²，C.Clarke²，F.Clemens³，F.Marken⁴，C.R.Bowen¹（Mechanical Engineering Department, University of Bath；Electronic and Electrical Engineering Department, University of Bath；High Performance Ceramics, EMPA Materials Science and Technology；Chemistry Department, University of Bath）.Sub-stoichiometric functionally graded titania fibres for water-splitting applications[J].半导体学报(英文版),2015,第6期李虹，蒲红斌，郑春蕾，陈治明（Department of Electronic Engineering，Xian University of，Xian，710048；Department of Electronic Engineering，Xian University of，Xian，710048；Department of Electronic Engineering，Xian University of，Xian，710048；Department of Electronic Engineering，Xian University of，Xian，710048.）.beta-FeSi_2 films prepared on 6H-SiC substrates by magnetron sputtering[J].半导体学报,2015,第6期陈亮^1，2，陈新宇¹，张有涛^1，3，李智群²，杨磊¹（Nanjing Electronic Devices Institute Guobo Electronics Co.Ltd；RF & OE IC Institute Southeast University；Science and Technology on Monolithic Integrated Circuits and Modules Laboratory）.A high linearity X-band SOI CMOS digitally-controlled phase shifter[J].半导体学报(英文版),2015,第6期 Rahul Kumar¹，Parag Bhargava¹，Ritu Srivastava²，Priyanka Tyagi²（Indian Institute of Technology Bombay；National Physical Laboratory）.Synthesis and electroluminescence properties of tris-[5-choloro-8-hydroxyquinoline]aluminum Al（5-Clq）₃[J].半导体学报(英文版),2015,第6期 Suranjana Banerjee¹，Monojit Mitra²（Academy of Technology，West Bengal University of Technology；Indian Institute of Engineering Science and Technology）.Heterojunction DDR THz IMPATT diodes based on Al_xGa_1-xN/Ga N material system[J].半导体学报(英文版),2015,第6期 Moumita Mukherjee¹，P.R.Tripathy²，S.P.Pati³（Centre for MM-wave Semiconductor Devices and Systems (CMSDS)，DRDO；Hi-Tech College of Engineering；Former Professor of Sambalpur University）.Si/Si C-based DD hetero-structure IMPATTs as MM-wave power-source：a generalized large-signal analysis[J].半导体学报(英文版),2015,第6期段志奎，胡建国，丁一，路崇，丁颜玉，王德明，谭洪舟（School of Information Science and Technology，Sun Yat-Sen University）.A novel dual-feed low-dropout regulator[J].半导体学报(英文版),2015,第6期 S. Theodore Chandra，N. B. Balamurugan，M. Bhuvaneswari，N. Anbuselvan，N. Mohankumar.Analysis of charge density and Fermi level of AllnSb/InSb single-gate high electron mobility transistor[J].半导体学报(英文版),2015,第6期姚常飞^1，2，周明²，罗运生²，许从海²（Science and Technology on Monolithic Integrated Circuits and Modules Laboratory，Nanjing Electronic Devices Institute；Department of Microwave and Millimeter Wave Modules，Nanjing Electronic Devices Institute）.Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes[J].半导体学报(英文版),2015,第6期冯帅^1，2，赵利川¹，张青竹¹，杨鹏鹏^1，2，唐兆云¹，闫江¹，吴次南²（Key Laboratory of Microelectronics Devices & Integrated Technology，Institute of Microelectronics，Chinese Academy of Sciences；College of Big Data and Information Engineering，Guizhou University）.Effects of a carbon implant on thermal stability of Ni_0.95(Pt_0.05)Si[J].半导体学报(英文版),2015,第6期袁凌，张强，石寅（Institute of Semiconductors，Chinese Academy of Sciences）.A high speed direct digital frequency synthesizer based on multi-channel structure[J].半导体学报(英文版),2015,第6期 Tanu Goyal¹，Manoj Kumar Majumder²，Brajesh Kumar Kaushik²（Department of ECE，IEC College of Engineering and Technology；Department of E&CE，Indian Institute of Technology Roorkee）.Propagation delay and power dissipation for different aspect ratio of single-walled carbon nanotube bundled TSV[J].半导体学报(英文版),2015,第6期汤国平¹，姚鸿飞²，马晓华¹，金智²，刘新宇²（School of Advanced Materials and Nanotechnology,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University；Institute of Microelectronics,Chinese Academy of Sciences）.On-wafer de-embedding techniques from 0.1 to 110 GHz[J].半导体学报(英文版),2015,第5期徐建¹，周正¹，吴毅强¹，王志功¹，陈建平²（Institute of RF- & OE-ICs,Southeast University；Nanjing Ticom Tech Co.Ltd）.A high linearity current mode second IF CMOS mixer for a DRM/DAB receiver[J].半导体学报(英文版),2015,第5期江金光，黄飞，熊智慧（Global Navigation Satellite System Research Center,Wuhan University）.Adaptive switching frequency buck DC-DC converter with high-accuracy on-chip current sensor[J].半导体学报(英文版),2015,第5期段吉海，蓝创，徐卫林，韦保林（Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology）.An OTA-C filter for ECG acquisition systems with highly linear range and less passband attenuation[J].半导体学报(英文版),2015,第5期池源^1，2，来新泉^1，2，杜含笑^1，2（Institute of Electronic CAD,Xidian University；Key Laboratory of High-Speed Circuit Design and EMC,Ministry of Education,Xidian University）.Analysis of switch-induced error voltage for automatic conversion mode change charge pumps[J].半导体学报(英文版),2015,第5期向济璇，陈迟晓，叶凡，许俊，李宁，任俊彦（State Key Laboratory of ASIC and System,Fudan University）.A 6-b 600 MS/s SAR ADC with a new switching procedure of 2-b/stage and selflocking comparators[J].半导体学报(英文版),2015,第5期韩雪，魏琦，杨华中，汪蕙（Division of Circuits and Systems,Department of Electronic Engineering,Tsinghua University）.A single channel,6-bit 410-MS/s 3bits/stage asynchronous SAR ADC based on resistive DAC[J].半导体学报(英文版),2015,第5期 A.M.M.Tanveer Karim¹，M.K.R.Khan²，M.Mozibur Rahman²（Department of Physics,Rajshahi University of Engineering & Technology；Department of Physics,University of Rajshahi）.Structural and opto-electrical properties of pyrolized ZnO-CdO crystalline thin films[J].半导体学报(英文版),2015,第5期首页上一页 6 7 8 9 10 下一页尾页共有13页，转到页

期刊文章列表