期刊的影响因子--文章列表

期刊文章列表
郭三栋（Department of Physics,School of Sciences,China University of Mining and Technology）.First-principles calculations of Mg₂X（X =Si,Ge,Sn） semiconductors with the calcium fluorite structure[J].半导体学报(英文版),2015,第5期王勇^1，2，张剑云¹，尹睿¹，赵宇航²，张卫¹（State Key Laboratory of ASIC & System,School of Microelectronics,Fudan University；Shanghai Integrated Circuit Research and Development Center Co.,Ltd.）.A 0.23 pJ 11.05-bit ENOB 125-MS/s pipelined ADC in a 0.18 μm CMOS process[J].半导体学报(英文版),2015,第5期马瑞，白文彬，朱樟明（School of Microelectronics,Xidian University）.An energy-efficient and highly linear switching capacitor procedure for SAR ADCs[J].半导体学报(英文版),2015,第5期高丹^1，2，刘波¹，李莹³，宋志棠¹，任万春³，李俊焘^1，2，许震^1，2，吕士龙¹，朱南飞³，任佳栋³，詹奕鹏³，吴汉明³，封松林¹（State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Micro-System and Information Technology,Chinese Academy of Sciences；University of Chinese Academy of Sciences；Semiconductor Manufacturing International Corporation）.The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory[J].半导体学报(英文版),2015,第5期王青松^1，2，Masao Ikeda¹，谭明¹，代盼^1，3，吴渊渊¹，陆书龙¹，杨辉¹（Key Laboratory Nano-Devices and Application,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences；Nano Science and Technology Institute,University of Science and Technology of China；University of Chinese Academy of Sciences）.High quality non-rectifying contact of ITO with both Ni and n-type GaAs[J].半导体学报(英文版),2015,第5期许会芳，代月花，李宁，徐建斌（Institute of Electronic and Information Engineering,Anhui University）.A 2-D semi-analytical model of double-gate tunnel field-effect transistor[J].半导体学报(英文版),2015,第5期周佳辉^1，2，常虎东²，刘洪刚²，刘桂明²，徐文俊¹，李琦^1，3，李思敏¹，何志毅¹，李海鸥¹（Guangxi Experiment Center of Information Science,Guilin University of Electronic Technology；Microwave Device and IC Department,Institute of Microelectronics,Chinese Academy of Sciences；State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China）.MIM capacitors with various Al₂O₃ thicknesses for GaAs RFIC application[J].半导体学报(英文版),2015,第5期雷严^1，2，刘志强²，何苗¹，伊晓燕²，王军喜²，李晋闽²，郑树文¹，李述体³（Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices,Institute of Optoelectronic Materials and Technology,South China Normal University；Center for Semiconductor Lighting,Institute of Semiconductors,Chinese Academy of Sciences；Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices,South China Normal University）.Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers[J].半导体学报(英文版),2015,第5期廖永平^1，2，张宇^1，2，邢军亮^1，2，魏思航^1，2，郝宏玥^1，2，王国伟^1，2，徐应强^1，2，牛智川^1，2（State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences；Synergetic Innovation Center of Quantum Information and Quantum Physics,University of Science and Technology of China）.High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells[J].半导体学报(英文版),2015,第5期王勇，刘丹丹，冯国庆，叶镇，高占琦，王晓华（National Key Laboratory on High Power Semiconductor Lasers,Changchun University of Science and Technology）.Preparation for Bragg grating of 808 nm distributed feedback laser diode[J].半导体学报(英文版),2015,第5期郑春蕾，蒲红斌，李虹，陈治明（Xi’an University of Technology,Department of Electronic Engineering）.Photoelectric properties of p-β-FeSi₂/n-4H-SiC heteroj unction near-infrared photodiode[J].半导体学报(英文版),2015,第5期 Najam Muhammad Amin，王志功，李智群（Engineering Research Center of RF-ICs and RF-Systems,Ministry of Education）.An I/Q mixer with an integrated differential quadrature all-pass filter for on-chip quadrature LO signal generation[J].半导体学报(英文版),2015,第5期郑春蕾，蒲红斌，李虹，陈治明（Xi'an University of Technology，Department of Electronic，Xi'an，Shaanxi 710048，China；Xi'an University of Technology，Department of Electronic，Xi'an，Shaanxi 710048，China；Xi'an University of Technology，Department of Electronic，Xi'an，Shaanxi 710048，China；Xi'an University of Technology，Department of Electronic，Xi'an，Shaanxi 710048，China.）.Photoelectric properties of p-beta-FeSi_2/n-4H-SiC heterojunction near-infrared photodiode[J].半导体学报,2015,第5期左园¹，李海鸥¹，翟江辉¹，唐宁¹，宋树祥²，李琦^1，3（Guangxi Experiment Center of Information Science,Guilin University of Electronic Technology；College of Electronic Engineering,Guangxi Normal University；State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China）.Thin silicon layer SOI power device with linearly-distance fixed charge islands[J].半导体学报(英文版),2015,第5期陈映平，李志谦（Sigma Micro Co.Ltd.）.Design of a constant-voltage and constant-current controller with dual-loop and adaptive switching frequency control[J].半导体学报(英文版),2015,第5期彭琪，张春，赵西金，王志华（Institute of Microelectronics,Tsinghua University）.A UHF RFID system with on-chip-antenna tag for short range communication[J].半导体学报(英文版),2015,第5期陈迟晓，向济璇，陈华斌，许俊，叶凡，李宁，任俊彦（State Key Laboratory of ASIC and System,Fudan University）.A capacitive DAC with custom 3-D 1-fF MOM unit capacitors optimized for fastsettling routing in high speed SAR ADCs[J].半导体学报(英文版),2015,第5期 Nima E.Gorji（Department of Electrical,Electronics and Information Engineering,University of Bologna）.Deposition and doping of CdS/CdTe thin film solar cells[J].半导体学报(英文版),2015,第5期万欣¹，周伟松¹，刘道广¹，薄涵亮¹，许军²（Institute of Nuclear and New Energy Technology,Tsinghua University；Institute of Microelectronics,Tsinghua University）.Charge deposition model for investigating SE-microdose effect in trench power MOSFETs[J].半导体学报(英文版),2015,第5期 Hamed Ghodsi，Hassan Kaatuzian（Photonics Research Laboratory(P.R.L.),Electrical Engineering Department,Amir Kabir University of Technology）.Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system[J].半导体学报(英文版),2015,第5期 Yograj Singh Duksh¹，Brajesh Kumar Kaushik²，Rajendra P.Agarwal³（Department of Electronics and Instrumentation Engineering,Mahatma Jyotiba Phule Rohilkhand University；Department of Electronics and Communication Engineering,Indian Institute of Technology；Shobhit University）.FDTD technique based crosstalk analysis of bundled SWCNT interconnects[J].半导体学报(英文版),2015,第5期刘剑，黄仕华，何绿（Physics Department，Zhejiang Normal University）.Simulation of a high-efficiency silicon-based heterojunction solar cell[J].半导体学报(英文版),2015,第4期励勇远，过伟，朱樟明（School of Microelectronics，Xidian University）.A high efficiency and power factor, segmented linear constant current LED driver[J].半导体学报(英文版),2015,第4期付强^1，2，张万荣¹，金冬月¹，赵彦晓¹，张良浩¹（College of Electronic Information and Control Engineering，Beijing University of Technology；College of Physics，Liaoning University）.Collector optimization for improving the product of the breakdown voltage–cutoff frequency in SiGe HBT[J].半导体学报(英文版),2015,第4期许淼，殷华湘，朱慧珑，马小龙，徐唯佳，张永奎，赵治国，罗军，杨红，李春龙，孟令款，洪培真，项金娟，高建峰，徐强，熊文娟，王大海，李俊峰，赵超，陈大鹏，杨士宁，叶甜春（Key Laboratory of Microelectronics Devices and Integrated Technology，Institute of Microelectronics，Chinese Academy of Sciences）.Device parameter optimization for sub-20nm node HK/MG-last bulk FinFETs[J].半导体学报(英文版),2015,第4期柳瑞丛，刘媛媛，陈雪，杨富华（Institute of Semiconductors，Chinese Academy of Sciences）.Beam multiplexing of diode laser arrays[J].半导体学报(英文版),2015,第4期孙顶，许盛之，张力，陈泽，葛阳，王宁，梁雪娇，魏长春，赵颖，张晓丹（Institute of Photo Electronics Thin Film Devices and Technology，Nankai University，Key Laboratory of Photoelectronic Thin Film Devices and Technology）.Influence of selenium evaporation temperature on the structure of Cu₂ZnSnSe₄ thin film deposited by a co-evaporation process[J].半导体学报(英文版),2015,第4期 Najam Muhammad Amin，王志功，李智群，李芹，刘扬（Engineering Research Center of RF-ICs and RF-Systems，Ministry of Education）.A low power, low noise figure quadrature demodulator for a 60GHz receiver in 65-nm CMOS technology[J].半导体学报(英文版),2015,第4期首页上一页 7 8 9 10 11 下一页尾页共有13页，转到页

期刊文章列表