期刊的影响因子--文章列表

期刊文章列表
Shi Chen¹，Chuantian Zuo²，Baomin Xu¹，Liming Ding²（Department of Materials Science and Engineering Southern University of Science and Technology；Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology）.Monolithic perovskite/silicon tandem solar cells offer an efficiency over 29%[J].Journal of Semiconductors,2021,第12期 Ting Zhi^1，2，Tao Tao^3，4，Xiaoyan Liu^1，2，Junjun Xue^1，2，Jin Wang^1，2，Zhikuo Tao^1，2，Yi Li^5，6，Zili Xie^3，4，Bin Liu^3，4（College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications；College of Microelectronics Nanjing University of Posts and Telecommunications；Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing University；Nanjing National Laboratory of Microstructures Nanjing University；School of Information Science and Technology Nantong University；Tongke School of Microelectronics Nantong University）.L ow-threshold lasing in a plasmonic laser using nanoplate InGaN/GaN[J].Journal of Semiconductors,2021,第12期 Xinyi Li，Ge Li，Hongbo Lu，Wei Zhang（Shanghai Institute of Space Power-sources）.>35% 5-junction space solar cells based on the direct bonding technique[J].Journal of Semiconductors,2021,第12期 Shangfeng Liu^1，2，Ye Yuan²，Shanshan Sheng¹，Tao Wang³，Jin Zhang²，Lijie Huang²，Xiaohu Zhang²，Junjie Kang²，Wei Luo²，Yongde Li²，Houjin Wang²，Weiyun Wang²，Chuan Xiao²，Yaoping Liu²，Qi Wang⁴，Xinqiang Wang^1，2（State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Nano-Optoelectronics Frontier Center of Ministry of Education Peking University；Songshan Lake Materials Laboratory；Dongguan Institute of Optoelectronics Peking University；Electron Microscopy Laboratory School of Physics Peking University）.F our-inch high quality crack-free AlN layer grown on a hightemperature annealed AlN template by MOCVD[J].Journal of Semiconductors,2021,第12期 Quan Wang^1，2，3，Changxi Chen^3，4，Wei Li^3，4，Yanbin Qin^3，4，Lijuan Jiang^3，4，5，Chun Feng^3，4，5，Qian Wang^3，5，Hongling Xiao^3，4，5，Xiufang Chen^1，2，Fengqi Liu^3，4，5，Xiaoliang Wang^3，4，5，Xiangang Xu^1，2，Zhanguo Wang^3，4（State Key Laboratory of Crystal Materials Shandong University；Institute of Novel Semiconductors Shandong University；Key Lab of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences；Center of Materials Science and Optoelectronics Engineering and School of Microelectronics University of Chinese Academy of Sciences；Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices）.F abrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz[J].Journal of Semiconductors,2021,第12期 Lingbo Jia¹，Lixiu Zhang²，Liming Ding²，Shangfeng Yang¹（Hefei National Laboratory for Physical Sciences at Microscale Key Laboratory of Materials for Energy Conversion (CAS) Department of Materials Science and Engineering University of Science and Technology of China；Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology）.Using fluorinated and crosslinkable fullerene derivatives to improve the stability of perovskite solar cells[J].Journal of Semiconductors,2021,第12期 Panpan Wang，Songxuan Han，Ruge Quhe（State Key Laboratory of Information Photonics and Optical Communications and School of Science Beijing University of Posts and Telecommunications）.Quantum transport simulation of the two-dimensional GaSb transistors[J].Journal of Semiconductors,2021,第12期 Peng Teng^1，2，3，Tong Zhou⁴，Yonghuan Wang^2，3，Ke Zhao¹，Xiegang Zhu^2，3，Xinchun Lai²（Southwest Jiaotong University School of Physical Science and Technology；Science and Technology on Surface Physics and Chemistry Laboratory；Institute of Materials China Academy of Engineering Physics；Beijing Institute for Advanced Study National University of Defense Technology）.Electricaltransportproperties ofcerium doped Bi₂Te₃ thin films grownbymolecular beam epitaxy[J].Journal of Semiconductors,2021,第12期 Xiaoshu Guo¹，Sandong Guo²（Xi'an University of Posts and Telecommunications；School of Electronic Engineering Xi'an University of Posts and Telecommunications）.J anusMSiGeN₄ (M = ZrandHf) monolayersderived from centrosymmetricβ-MA₂Z₄:A first-principles study[J].Journal of Semiconductors,2021,第12期 Yu Zou¹，Wenjin Yu¹，Lixiu Zhang²，Cuncun Wu³，Lixin Xiao¹，Liming Ding²（State Key Laboratory for Mesoscopic Physics Department of Physics Peking University；School of Materials Science and Engineering State Key Laboratory of Reliability and Intelligence of Electrical Equipment Hebei University of Technology；Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology）.Tuning the bandgap of double perovskites[J].Journal of Semiconductors,2021,第12期 Dipak L Gapale¹，Pranav P.Bardapurkar¹，Sandeep A.Arote¹，Sanjaykumar Dalvi¹，Prashant Baviskar¹，Ratan Y Borse²（S. N. Arts D. J. M. Commerce and B. N. S. Science College Sangamner District Ahmednagar 422 605 MS；Thin and Thick film Laboratory Department of Electronics M. S. G. College Malegaon Camp (Pin 423105) District Nashik Maharashtra）.Humidity sensing properties of spray deposited Fe doped TiO₂ thinfilm[J].Journal of Semiconductors,2021,第12期 Uma Devi Godavarti¹，P.Nagaraju¹，Vijayakumar Yelsani²，Yamuna Pushukuri³，P.S.Reddy⁴，Madhavaprasad Dasari⁵（Nanosensor Research Laboratory Department of Physics CMR Technical Campus Medchal Hyderabad；Department of Physics Anurag University Hyderabad；Department of Physics Mallareddy Engineering College (Autonomous) Dulapally；Department of Applied Sciences NIT Goa；Department of Physics Gitam University）.Synthesis and characterization of ZnS-based quantum dots to trace low concentration of ammonia[J].Journal of Semiconductors,2021,第12期 Thomas Hirtz，Steyn Huurman，He Tian，Yi Yang，Tian-Ling Ren（Institute of Microelectronics Tsinghua University；Department of Computer Science Tsinghua University）.Framework for TCAD augmented machine learning on multi-I -V characteristics using convolutional neural network and multiprocessing[J].Journal of Semiconductors,2021,第12期 Guo Xiaoshu，Guo Sandong.Janus MSiGeN_4 (M = Zr and Hf)monolayers derived from centrosymmetric beta-MA_2Z_4:A first-principles study[J].半导体学报,2021,第12期 Jiesu，Wang（Beijing Academy of Quantum Information Sciences）.Berezinskii-Kosterlitz-Thouless phase transition in a 2D-XY ferromagnetic monolayer[J].Journal of Semiconductors,2021,第12期 Fowziya Shaik Ali¹，Faisal Al Marzouqi²，A.Afroos Banu³，M.Ismail Fathima⁴，A.R.Mohamed Jahangir⁵，K.Mohamed Rafi⁶，A.Ayeshamariam⁷（Department of Chemistry Khadir Mohideen College Adirampattinam 614701 (Affiliated to Bharathidasan University Tiruchirappalli)；Department of Process Engineering International Maritime College；Department of Physics Arul Anandar College (Auto) Karumathur；Biyaq Oilfield Services LLC Mina Al Fahal PC 116 Muscat；Research Department of Botany Jamal Mohamed College (Auto) (Affiliated to Bharathidasan University；Research Department of Physics Khadir Mohideen College (Affiliated to Bharathidasan University）.Novel synthesis of cerium oxide nano photocatalyst by a hydrothermal method[J].Journal of Semiconductors,2021,第12期 Thomas Hirtz¹，Steyn Huurman²，He Tian¹，Yi Yang¹，Tian-Ling Ren¹（Institute of Microelectronics，Tsinghua University；Department of Computer Science，Tsinghua University）.Framework for TCAD augmented machine learning on multi-Ⅰ–Ⅴ characteristics using convolutional neural network and multiprocessing[J].Journal of Semiconductors,2021,第12期（State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics，Nano-Optoelectronics Frontier Center of Ministry of Education，Peking University，Beijing 100871，China；Songshan Lake Materials Laboratory，Dongguan 523808，China；Songshan Lake Materials Laboratory，Dongguan 523808，China；State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics，Nano-Optoelectronics Frontier Center of Ministry of Education，Peking University，Beijing 100871，China；Electron Microscopy Laboratory，School of Physics，Peking University，Beijing 100871，China；Dongguan Institute of Optoelectronics，Peking University，Dongguan 523808，China）.Four-inch high quality crack-free AIN layer grown on a high-temperature annealed AIN template by MOCVD[J].半导体学报（英文版）,2021,第12期 Teng Fei^1，2，3，Shenqiang Zhai^1，2，Jinchuan Zhang^1，2，Ning Zhuo^1，2，Junqi Liu^1，2，3，Lijun Wang^1，2，3，Shuman Liu^1，2，Zhiwei Jia^1，2，Kun Li^1，2，3，Yongqiang Sun^1，2，3，Kai Guo^1，2，Fengqi Liu^1，2，3，Zhanguo Wang^1，2，3（Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences；Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices；Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences）.High power λ ～ 8.5 μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K[J].Journal of Semiconductors,2021,第11期 Feng Liang¹，Degang Zhao^1，2，Zongshun Liu¹，Ping Chen¹，Jing Yang¹，Lihong Duan¹，Yongsheng Shi¹，Hai Wang¹（State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences；University of Chinese Academy of Sciences）.GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature[J].Journal of Semiconductors,2021,第11期 Yifan Wang^1，2，Xuanze Li^1，2，Pei Liu^1，2，Jing Xia^1，2，Xiangmin Meng^1，2（Key Laboratory of Photochemical Conversion and Optoelectronic Materials Technical Institute of Physics and ChemistryChinese Academy of Sciences；Centre of Material Science and Optoelectronic Engineering University of Chinese Academy of Sciences）.E pitaxialgrowth ofCsPbBr₃/PbS single-crystal film heterostructures forphotodetection[J].Journal of Semiconductors,2021,第11期 Dawei Cao，Ming Li，Jianfei Zhu，Yanfang He，Tong Chen，Yuan Liu，Mingming Chen，Ying Yang（Department of Physics Jiangsu University）.E nhancement of photoelectrochemical performance in ferroelectric films via the introduction of an Au buffer layer[J].Journal of Semiconductors,2021,第11期首页 1 2 3 4 5 下一页尾页共有8页，转到页

期刊文章列表