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Zhimin Fang1,Lixiu Zhang2,Shengzhong (Frank) Liu3,Liming Ding2(Key Laboratory of Applied Surface and Colloid Chemistry (MoE), School of Materials Science and Engineering, Shaanxi Normal University;Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology).Organic ammonium halides enhance the performance of Pb-Sn perovskite solar cells[J].Journal of Semiconductors,2022,第12期
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Guang Yang1,2,3,Hao Luo2,3,Jiajun Li2,3,Qinqin Shao2,3,Yazhe Wang2,3,Ruzhong Zhu2,3,Xi Zhang2,3,Lihui Song2,3,Yiqiang Zhang4,Lingbo Xu1,Can Cui1,Xiaodong Pi2,3,Deren Yang2,3,Rong Wang2,3(Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of Physics Zhejiang Sci-Tech UniversityHangzhou 310018 China;State Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China;Hangzhou Innovation Center Zhejiang University Hangzhou 311200 China;School of Materials Science and Engineering & Henan Institute of Advanced Technology Zhengzhou University Zhengzhou 450001 China).Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits[J].Journal of Semiconductors,2022,第12期
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Yueer Shan1,Zhengzhou Cao1,Guozhu Liu2(East Technologies, Inc. Wuxi;China Electronics Technology Group Corporation No. 58 Research Institute).Research on eigenstate current control technology of Flashbased FPGA[J].Journal of Semiconductors,2022,第12期
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Van Nang Lam1,Thi Bich Vu2,3,Quang Dat Do1,Thi Thanh Xuan Le1,Tien Dai Nguyen2,3,T.-Thanh-Bao Nguyen4,Hoang Tung Do4,Thi Tu Oanh Nguyen5(Department of Natural Sciences Hoa Lu University Ninh Nhat Ninh Binh City Viet NamDepartment of Natural Sciences Hoa Lu University Ninh Nhat Ninh Binh City Viet Nam;Institute of Theoretical and Applied Research Duy Tan University Hanoi 100000 Viet Nam;Faculty of Natural Sciences Duy Tan University Da Nang 550000 Vietnam;Institute of Physics Vietnam Academy of Science and Technology 10 Dao Tan Ba Dinh Hanoi VietnamInstitute of Physics Vietnam Academy of Science and Technology 10 Dao Tan Ba Dinh Hanoi Vietnam;Institute of Materials Science Vietnam Academy of Science and Technology 18 Hoang Quoc Viet Caugiay Hanoi VietnamInstitute of Materials Science Vietnam Academy of Science and Technology 18 Hoang Quoc Viet Caugiay Hanoi Vietnam).One-step hydrothermal synthesis of Sn-doped α-Fe2O3 nanoparticles for enhanced photocatalytic degradation of Congo red[J].Journal of Semiconductors,2022,第12期
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Xiaojie Wang1,Zhanwei Shen2,Guoliang Zhang1,Yuyang Miao1,Tiange Li1,Xiaogang Zhu1,Jiafa Cai1,Rongdun Hong1,3,Xiaping Chen1,Dingqu Lin1,Shaoxiong Wu1,Yuning Zhang1,Deyi Fu1,Zhengyun Wu1,Feng Zhang1,4(College of Physical Science and Technology Xiamen University Xiamen 361005 China;Key Laboratory of Semiconductor Material Sciences Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;Shenzhen Research Institute of Xiamen University Shenzhen 518057 China;Jiujiang Research Institute of Xiamen University Jiujiang 332000 China).A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics[J].Journal of Semiconductors,2022,第12期
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Tieshi Wei1,2,Xuefei Li1,Zhiyun Li3,Wenxian Yang1,Yuanyuan Wu1,Zhiwei Xing1,Shulong Lu1(Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123 China;Nano Science and Technology Institute University of Science and Technology of China Suzhou 215123 China;Vacuum Interconnected Nanotech Workstation (NANO-X) Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123 China).Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy[J].Journal of Semiconductors,2022,第12期
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Haiyue Dong1,Lixiu Zhang2,Wenhua Zhang3,Jilin Wang1,Xiaoliang Zhang4,Liming Ding2(School of Materials Science and Engineering, Guilin University of Technology;Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology;School of Materials and Energy, Yunnan University;School of Materials Science and Engineering, Beihang University).Single crystals of perovskites[J].Journal of Semiconductors,2022,第12期
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Yutong Zhang1,2,Zhuoya Zhu1,2,Shuai Zhang1,2,Xianxin Wu1,2,Wenna Du1,2,Xinfeng Liu1,2(CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Beijing 100190 China;University of Chinese Academy of Sciences Beijing 100049 China).Spectroscopy and carrier dynamics of one-dimensional nanostructures[J].Journal of Semiconductors,2022,第12期
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Xiaotian Sun1,Qiuhui Li2,Ruge Quhe3,Yangyang Wang4,Jing Lu2,5,6,7,8(College of Chemistry and Chemical Engineering and Henan Key Laboratory of Function-Oriented Porous Materials Luoyang Normal University Luoyang 471934 China;State Key Laboratory of Information Photonics and Optical Communications and School of Science Beijing University of Posts and Telecommunications Beijing 100876 China;State Key Laboratory for Mesoscopic Physics and School of Physics Peking University Beijing 100871 China;Qian Xuesen Laboratory of Space Technology China Academy of Space Technology Beijing 100094 China;Collaborative Innovation Center of Quantum Matter Beijing 100871 China;Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD) Peking University Beijing 100871 China;Peking University Yangtze Delta Institute of Optoelectronics Nantong 226010 China;Key Laboratory for the Physics and Chemistry of Nanodevices Peking University Beijing 100871 China).Super high maximum on-state currents in 2D transistors[J].Journal of Semiconductors,2022,第12期
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Sanaz Alamdari1,Majid Jafar Tafreshi2,Morteza Sasani Ghamsari3(Department of Nanotechnology, Faculty of New Sciences and Technologies, Semnan University, Semnan;Faculty of Physics, Semnan University, 35195-363;Photonics & Quantum Technologies Research School, Nuclear Science and Technology Research Institute, 11155-3486).Highly stable Ga-doped ZnO/polystyrene nanocomposite film with narrow-band cyan emission[J].Journal of Semiconductors,2022,第12期
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Qihang Xiong1,Weifu Cen2,Xingtong Wu1,Cong Chen3(College of Chemical Engineering, Guizhou Minzu University;College of Materials Science and Engineering, Guizhou Minzu University;College of Mechanical and Electrical Engineering, Guizhou Minzu University).Effect of warpage on the electronic structure and optical properties of bilayer germanene[J].Journal of Semiconductors,2022,第12期
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Chaofan Cao1,Guixian Xiao1,Yao Lu2(Second Affiliated Hospital, Shenyang Medical College;State Key Laboratory of Automotive Safety and Energy, School of Vehicle and Mobility, Tsinghua University).Humidity sensor based on BiOBr synthesized under ambient condition[J].Journal of Semiconductors,2022,第12期
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yali liu,wei li,yudong li,xiaokuan li,liangsen feng,xinliang li(Science and Technology on Metrology and Calibration Laboratory;Changcheng Institute of Metrology & Measurement;Aviation Industry Corporation of China).Influence of architecture and temperature of alkali atom vapor cells on absorption spectra[J].Journal of Semiconductors,2022,第12期
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Lam Van Nang,Vu Thi Bich,Do Quang Dat,Le Thi Thanh Xuan,Nguyen Tien Dai,Thanh-Bao Nguyen T,Do Hoang Tung,Nguyen Thi Tu Oanh.One-step hydrothermal synthesis of Sn-doped alpha-Fe_2O_3 nanoparticles for enhanced photocatalytic degradation of Congo red[J].半导体学报,2022,第12期
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adnan shariah,feda mahasneh(Department of Physics, Jordan University of Science and Technology).Emitter layer optimization in heterojunction bifacial silicon solar cells[J].Journal of Semiconductors,2022,第12期
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Xueqin Zhao1,Jinou Dong1,Licheng Fu1,Yilun Gu1,Rufei Zhang1,Qiaolin Yang1,Lingfeng Xie1,Yinsong Tang1,Fanlong Ning1,2,3(Zhejiang Province Key Laboratory of Quantum Technology and Device and Department of Physics, Zhejiang University;Collaborative Innovation Center of Advanced Microstructures, Nanjing University;State Key Laboratory of Silicon Materials, Zhejiang University).(Ba1-xNax)F(Zn1-xMnx)Sb:A novel fluoride-antimonide magnetic semiconductor with decoupled charge andspin doping[J].Journal of Semiconductors,2022,第11期
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Zhaojun Suo1,2,Linwang Wang1,Shushen Li1,2,Junwei Luo1,2(State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences).Clarifying the atomicoriginofelectronkillers in β-Ga2O3 from thefirst-principles studyofelectron capture rates[J].Journal of Semiconductors,2022,第11期
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Kaixuan Chen1,2,Gengxin Chen3,Ziliang Ruan3,Xuancong Fan1,2,Junwei Zhang4,Ranfeng Gan1,Jie Liu4,Daoxin Dai3,5,Changjian Guo1,2,Liu Liu3,5(Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics,South China Normal University, Higher-Education Mega-Center;National Center for International Research on Green Optoelectronics, South China Normal University;State Key Laboratory for Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University;State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University;Jiaxing Key Laboratory of Photonic Sensing & Intelligent Imaging, Intelligent Optics & Photonics Research Center, Jiaxing Research Institute,Zhejiang University).Four-channel CWDM transmitter chip based on thin-film lithium niobate platform[J].Journal of Semiconductors,2022,第11期
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Yiling Nie1,Pengshan Xie2,Xu Chen1,Chenxing Jin1,Wanrong Liu1,Xiaofang Shi1,Yunchao Xu1,Yongyi Peng1,Johnny C.Ho2,3,4,Jia Sun1,Junliang Yang1(Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University;Hong Kong SAR China;Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University), Ministry of Education).Hybrid C8-BTBT/InGaAs nanowire heterojunction for artificial photosynaptic transistors[J].Journal of Semiconductors,2022,第11期
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Zixu Sa1,Fengjing Liu1,Dong Liu1,Mingxu Wang1,Jie Zhang1,Yanxue Yin1,Zhiyong Pang1,Xinming Zhuang1,Peng Wang2,Zaixing Yang1(School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University;College of Electronic and Information Engineering, Shandong University of Science and Technology).Ag-catalyzed GaSb nanowires for flexible near-infrared photodetectors[J].Journal of Semiconductors,2022,第11期
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Hongrui Lv1,2,Xianglong Shi3,Yujie Ai1,2,Zhe Liu1,Defeng Lin1,4,Lifang Jia1,Zhe Cheng1,Jie Yang1,Yun Zhang1,2(Institute of Semiconductors, Chinese Academy of Sciences;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences;Beijing Aerospace Micro-electronics Technology Co.;Lishui Zhongke Semiconductor Material Co., Ltd.).Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor[J].Journal of Semiconductors,2022,第11期
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Xufeng Luo1,Lixiu Zhang2,Youxuan Zheng1,Liming Ding2(State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University;Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology).Improving reverse intersystem crossing of MR-TADF emitters for OLEDs[J].Journal of Semiconductors,2022,第11期
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xinyu liu, logan riney, josue guerra, william powers, jiashu wang, jacek k. furdyna, and badih a. assaf(Department of Physics and Astronomy, University of Notre Dame, Notre Dame).Colossal negative magnetoresistance from hopping in insulating ferromagnetic semiconductors[J].Journal of Semiconductors,2022,第11期
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Songxue Bai1,Lixiu Zhang2,Qianqian Lin1,3,4,Liming Ding2(Key Lab of Artificial Micro- and Nano-Structures (MoE), School of Physics and Technology, Wuhan University;Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology;Hubei Luojia Laboratory;Suzhou Institute of Wuhan University).Organic photodetectors with non-fullerene acceptors[J].Journal of Semiconductors,2022,第11期
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Lulu Guan1,Xingyu Li1,Dongchen Che2,Kaidong Xu1,2,Shiwei Zhuang1(School of Physics and Electronic Engineering, Jiangsu Normal University;Jiangsu Leuven Instruments Co. Ltd).Plasma atomic layer etching of GaN/AlGaN materials and application: An overview[J].Journal of Semiconductors,2022,第11期
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xiangrui meng, changchun chai, fuxing li,yi sun, and yintang yang(Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University).High-power microwaves response characteristics of silicon and GaAs solar cells[J].Journal of Semiconductors,2022,第11期
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Suo Zhaojun,Wang Linwang,Li Shushen,Luo Junwei.Clarifying the atomic origin of electron killers in beta-Ga_2O_3 from the first-principles study of electron capture rates[J].半导体学报,2022,第11期
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