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期刊文章列表

  • Zhenzhen Kong1,2,Hongxiao Lin3,2,Hailing Wang4,Yanpeng Song4,Junjie Li1,Xiaomeng Liu4,Anyan Du1,Yuanhao Miao1,3,Yiwen Zhang1,2,Yuhui Ren1,2,Chen Li1,2,Jiahan Yu1,2,Jinbiao Liu1,2,Jingxiong Liu1,2,Qinzhu Zhang1,Jianfeng Gao1,Huihui Li4,Xiangsheng Wang4,Junfeng Li1,Henry H.Radamson3,Chao Zhao4,Tianchun Ye1,2,Guilei Wang4,5(Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences;Beijing Superstring Academy of Memory Technology;Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System;Microelectronics Institute, University of Chinese Academy of Sciences;Hefei National Laboratory).Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM[J].Journal of Semiconductors,2023,第12期
  • Hui Gao1,Hongyi Zhou1,Yulong Hao2,Guoliang Zhou3,Huan Zhou1,Fenglin Gao1,Jinbiao Xiao1,Pinghua Tang1,Guolin Hao1,4(School of Physics and Optoelectronics and Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University;College of Physics and Technology & Guangxi Key Laboratory of Nuclear Physics and Technology, Guangxi Normal University;Department of Electronic and Electrical Engineering, University of Sheffield;National Laboratory of Solid State Microstructures, Nanjing University).Controllable growth of wafer-scale PdS and PdS2 nanofilms via chemical vapor deposition combined with an electron beam evaporation technique[J].Journal of Semiconductors,2023,第12期
  • Yongqiang Sun1,2,3,Guangzhou Cui1,2,3,Kai Guo1,2,Jinchuan Zhang1,2,Ning Zhuo1,2,Lijun Wang1,2,3,Shuman Liu1,2,3,Zhiwei Jia1,2,Teng Fei1,2,3,Kun Li1,2,3,Junqi Liu1,2,3,Fengqi Liu1,2,3,Shenqiang Zhai1,2(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences).Quantum cascade lasers grown by MOCVD[J].Journal of Semiconductors,2023,第12期
  • Pavel Butenko,Michael Boiko,Mikhail Sharkov,Aleksei Almaev,Aleksnder Kitsay,Vladimir Krymov,Anton Zarichny,Vladimir Nikolaev(Ioffe Institute;Tomsk State University).High-temperature annealing of ( 201) β-Ga2O3 substrates for reducing structural defects after diamond sawing[J].Journal of Semiconductors,2023,第12期
  • Jianhua Chen1,Yiming Sun1,Jie Sun2,Junqiao Ding1,Liming Ding2(School of Chemical Science and Technology, Yunnan University;Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology).Stretchable organic electrochemical transistors with micro-/nano-structures[J].Journal of Semiconductors,2023,第12期
  • Zhuang Ma1,Jingwen Jiang1,Gui Wang1,Peng Zhang1,Yiling Sun1,Zhengfang Qian1,Jiaxin Zheng2,Wen Xiong3,Fei Wang4,Xiuwen Zhang1,5,Pu Huang1(Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University;School of Advanced Materials, Peking University, Shenzhen Graduate School;Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences;School of Physics and Microelectronics, Zhengzhou University;Renewable and Sustainable Energy Institute, University of Colorado).S witchable hidden spin polarization and negative Poisson's ratio in two-dimensional antiferroelectric wurtzite crystals[J].Journal of Semiconductors,2023,第12期
  • Qirui Ren1,2,Xiaofan Sun1,2,Xiangqu Fu1,2,Shuaidi Zhang1,2,Yiyang Yuan1,2,Hao Wu1,2,Xiaoran Li3,Xinghua Wang3,Feng Zhang1,2(Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences;School of Integrated Circuits, University of Chinese Academy of Sciences;School of Information and Electronics, Beijing Institute of Technology).A review of automatic detection of epilepsy based on EEG signals[J].Journal of Semiconductors,2023,第12期
  • Yu Li,Shuaibing Wang,Jie Chen,Ouyang Lin,Zhe Yin,Chunhe Yang,Aiwei Tang(Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University).From kesterite 2D nanosheets to wurtzite 1D nanorods:controllable synthesis of Cu-Zn-Sn-S and their application in electrocatalytic hydrogen evolution[J].Journal of Semiconductors,2023,第12期
  • Tong Hoang Lin1,2,3,Che Quang Cong1,2,3,Nguyen Thanh Hoai Nam1,2,3,Hoang An1,2,3,Nguyen Duy Hai1,2,3,Ton That Buu1,2,3,Thoi Le Nhat Binh1,2,3,Hoang Le Minh1,2,3,Lam Thanh Ngan1,2,3,Hoang Thuy Kim Ngan1,2,3,Du Chi Vi1,2,3,Ta Dang Khoa2,3,Nguyen Huu Hieu1,2,3(VNU-HCM, Key Laboratory of Chemical Engineering and Petroleum Processing (Key CEPP Lab), Ho Chi Minh City University of Technology(HCMUT);Faculty of Chemical Engineering, Ho Chi Minh City University of Technology (HCMUT);Vietnam National University Ho Chi Minh City (VNU-HCM)).Green synthesis of three-dimensional magnesium ferrite/titanium dioxide/reduced graphene from Garcinia mangostana extract for crystal violet photodegradation and antibacterial activity[J].Journal of Semiconductors,2023,第12期
  • Chuanpeng Jiang1,Jinhao Li1,Hongchao Zhang1,Shiyang Lu1,Pengbin Li1,Chao Wang1,Zhongkui Zhang1,Zhengyi Hou1,Xu Liu1,Jiagao Feng1,He Zhang1,Hui Jin1,Gefei Wang2,Hongxi Liu2,Kaihua Cao2,Zhaohao Wang1,Weisheng Zhao1(School of Integrated Circuit Science and Engineering, Beihang University;Truth Memory Corporation).Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications[J].Journal of Semiconductors,2023,第12期
  • Rashid Khan1,Guangyi Shi1,Wenjing Chen1,Zhengguo Xiao1,Liming Ding2(Key Laboratory of Strongly-Coupled Quantum Matter Physics (CAS), Department of Physics, University of Science and Technology of China;Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology).I nterface engineering yields efficient perovskite light-emitting diodes[J].Journal of Semiconductors,2023,第12期
  • Chenglin Du1,2,Ran Ye1,2,Xiaolong Cai1,2,Xiangyang Duan1,2,Haijun Liu2,Yu Zhang2,Gang Qiu2,Minhan Mi3(State Key Laboratory of Mobile Network and Mobile Multimedia Technology;Wireless Product Planning Department, ZTE Corporation;School of Microelectronics, Xidian University).A review on GaN HEMTs: nonlinear mechanisms and improvement methods[J].Journal of Semiconductors,2023,第12期
  • Pavel Butenko1,Michael Boiko2,Mikhail Sharkov2,Aleksei Almaev3,Aleksnder Kitsay2,Vladimir Krymov2,Anton Zarichny3,Vladimir Nikolaev1,2(MISiS University;Perfect Crystala LLC;Tomsk State University).High-temperature annealing of (?01) β-Ga2O3 substrates for reducing structural defects after diamond sawing[J].Journal of Semiconductors,2023,第12期
  • Butenko Pavel,Boiko Michael,Sharkov Mikhail,Almaev Aleksei,Kitsay Aleksnder,Krymov Vladimir,Zarichny Anton,Nikolaev Vladimir.High-temperature annealing of (201) beta-Ga_2O_3 substrates for reducing structural defects after diamond sawing[J].半导体学报,2023,第12期
  • Madhavi Sharad Darekar,Praveen Beekanahalli Mokshanatha(Department of Physics, Institute of Engineering and Technology, Srinivas University).Hyperfine splitting and ferromagnetism in CdS : Mn nanoparticles for optoelectronic device applications[J].Journal of Semiconductors,2023,第12期
  • Jiaxin Song,Malik Ashtar,Ying Yang,Yuan Liu,Mingming Chen,Dawei Cao(School of Physics and Electronic Engineering,Jiangsu University).Photocatalytic removal of heavy metal ions and antibiotics in agricultural wastewater:A review[J].半导体学报(英文版),2023,第11期
  • Xiaotian Gao1,Guohao Yu2,3,Jiaan Zhou2,Zheming Wang2,Yu Li2,Jijun Zhang1,Xiaoyan Liang1,Zhongming Zeng2,Baoshun Zhang2,3(School of Materials Science and Engineering,Shanghai University;Nanofabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences;School of Nano-Tech and Nano-Bionics,University of Science and Technology of China).Study of enhancement-mode GaN pFET with H plasma treated gate recess[J].半导体学报(英文版),2023,第11期
  • Chenglin Wang1,Jie Sun2,Jiangzhao Chen3,Cong Chen1,4,Liming Ding2(State Key Laboratory of Reliability and Intelligence of Electrical Equipment,School of Materials Science and Engineering,Hebei University of Technology;Center for Excellence in Nanoscience (CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS),National Center for Nanoscience and Technology;Faculty of Materials Science and Engineering,Kunming University of Science and Technology;Macao Institute of Materials Science and Engineering (MIMSE),Macau University of Science and Technology).Mechanical pressing method for making high-quality perovskite single crystals[J].半导体学报(英文版),2023,第11期
  • Zhonggao Bu1,Chengyi Xiao1,Jie Sun2,Weiwei Li1,Liming Ding2(Beijing Advanced Innovation Center for Soft Matter Science and Engineering,State Key Laboratory of Organic-Inorganic Composites,Beijing University of Chemical Technology;Center for Excellence in Nanoscience (CAS),Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS),National Center for Nanoscience and Technology).When insulating polymers meet conjugated polymers:the non-covalent bonding does matter[J].半导体学报(英文版),2023,第11期
  • Liang Wu1,Peng Wang2,Xingwu Zhai1,Hang Wang1,Wenqi Zhan1,Xinfeng Tang1,Qianwen Li2,Min Zhou1(Hefei National Laboratory for Physical Sciences at the Microscale,University of Science and Technology of China;College of Light-Textile Engineering and Art,Anhui Agriculture University).Metallic few-layered 1T-VS2 nanosheets for enhanced sodium storage[J].半导体学报(英文版),2023,第11期
  • Hang Zhou,Jingrong Yan,Jialin Li,Huan Ge,Tao Zhu,Bingke Zhang,Shucheng Chang,Junmin Sun,Xue Bai,Xiaoguang Wei,Fei Yang(State Key Laboratory of Advanced Power Transmission Technology,Beijing Institute of Smart Energy).A review of the etched terminal structure of a 4H-SiC PiN diode[J].半导体学报(英文版),2023,第11期
  • Danlu Liu1,Ming Li1,Tang Xu1,Jie Dong1,Yuming Fang1,2,Yue Xu1,2(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications;National and Local Joint Engineering Laboratory of RF Integration & Micro-Assembly Technology).Study of the influence of virtual guard ring width on the performance of SPAD detectors in 180 nm standard CMOS technology[J].半导体学报(英文版),2023,第11期
  • Devenderpal Singh,Shalini Chaudhary,Basudha Dewan,Menka Yadav(Department of Electronics and Communication Engineering,Malaviya National Institute of Technology).Performance optimization of tri-gate junctionless FinFET using channel stack engineering for digital and analog/RF design[J].半导体学报(英文版),2023,第11期
  • Haitao Chen1,2,3,Hongyuan Cao1,Zejie Yu1,Weike Zhao1,Daoxin Dai1,4(State Key Laboratory for Modern Optical Instrumentation,College of Optical Science and Engineering,International Research Center for Advanced Photonics,Zhejiang University,Zijingang Campus;College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices,National University of Defense Technology;Nanhu Laser Laboratory,National University of Defense Technology;Ningbo Research Institute,Zhejiang University).Waveguide-integrated optical modulators with two-dimensional materials[J].半导体学报(英文版),2023,第11期
  • Chengyun Dong1,Xiang An1,Zhicheng Wu1,Zhiguo Zhu1,Chao Xie2,Jian-An Huang3,Linbao Luo1(School of Microelectronics,Hefei University of Technology;Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits,Information Materials and Intelligent Sensing Laboratory of Anhui Province,Anhui University;Faculty of Medicine,Faculty of Biochemistry and Molecular Medicine,University of Oulu).Multilayered PdTe2/thin Si heterostructures as self-powered flexible photodetectors with heart rate monitoring ability[J].半导体学报(英文版),2023,第11期
  • Swagata Samanta1,2,Jue Wang2,Edward Wasige2(Department of Electronics and Communication Engineering,SRM University-AP;School of Engineering,University of Glasgow).Development of a simple two-step lithography fabrication process for resonant tunneling diode using air-bridge technology[J].半导体学报(英文版),2023,第11期
  • Xi Lu1,Changju Liu2,3,Pinyuan Zhao1,Yu Zhang1,Bei Li3,Zhenzhen Zhang1,Jiangtao Xu2(School of Electronics and Information,Hangzhou Dianzi University;Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology,School of Microelectronics,Tianjin University;Chongqing Optoelectronics Research Institute).Incomplete charge transfer in CMOS image sensor caused by Si/SiO2 interface states in the TG channel[J].半导体学报(英文版),2023,第11期
  • Yunshan Zhang1,Yifan Xu1,Shijian Guan2,Jilin Zheng3,Hongming Gu1,Lianyan Li1,Rulei Xiao2,Tao Fang2,Hui Zou1,Xiangfei Chen2(College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology),Nanjing University of Posts and Telecommunications;College of Engineering and Applied Sciences,Nanjing University;College of Communications Engineering,PLA Army Engineering University).Modulation bandwidth enhancement in monolithic integrated two-section DFB lasers based on the detuned loading effect[J].半导体学报(英文版),2023,第11期
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